全文获取类型
收费全文 | 107387篇 |
免费 | 1572篇 |
国内免费 | 1232篇 |
专业分类
电工技术 | 2187篇 |
综合类 | 141篇 |
化学工业 | 11485篇 |
金属工艺 | 5595篇 |
机械仪表 | 3307篇 |
建筑科学 | 2113篇 |
矿业工程 | 159篇 |
能源动力 | 3091篇 |
轻工业 | 6425篇 |
水利工程 | 720篇 |
石油天然气 | 673篇 |
武器工业 | 15篇 |
无线电 | 16351篇 |
一般工业技术 | 22604篇 |
冶金工业 | 26188篇 |
原子能技术 | 1481篇 |
自动化技术 | 7656篇 |
出版年
2022年 | 499篇 |
2021年 | 784篇 |
2020年 | 563篇 |
2019年 | 714篇 |
2018年 | 1185篇 |
2017年 | 1146篇 |
2016年 | 1229篇 |
2015年 | 985篇 |
2014年 | 1561篇 |
2013年 | 4842篇 |
2012年 | 2724篇 |
2011年 | 4051篇 |
2010年 | 3236篇 |
2009年 | 3884篇 |
2008年 | 4052篇 |
2007年 | 4257篇 |
2006年 | 3858篇 |
2005年 | 3469篇 |
2004年 | 3300篇 |
2003年 | 3147篇 |
2002年 | 2817篇 |
2001年 | 3083篇 |
2000年 | 2826篇 |
1999年 | 3175篇 |
1998年 | 9789篇 |
1997年 | 6370篇 |
1996年 | 4927篇 |
1995年 | 3291篇 |
1994年 | 2913篇 |
1993年 | 2826篇 |
1992年 | 1694篇 |
1991年 | 1662篇 |
1990年 | 1592篇 |
1989年 | 1387篇 |
1988年 | 1223篇 |
1987年 | 906篇 |
1986年 | 937篇 |
1985年 | 979篇 |
1984年 | 849篇 |
1983年 | 744篇 |
1982年 | 733篇 |
1981年 | 719篇 |
1980年 | 610篇 |
1979年 | 504篇 |
1978年 | 434篇 |
1977年 | 576篇 |
1976年 | 1000篇 |
1975年 | 328篇 |
1974年 | 288篇 |
1973年 | 277篇 |
排序方式: 共有10000条查询结果,搜索用时 15 毫秒
101.
Nanocrystalline Gd2O3:A (A=Eu3+, Dy3+, Sm3+, Er3+) phosphor films and their patterning were fabricated by a Pechini sol–gel process combined with a soft lithography. X-ray diffraction (XRD), atomic force microscopy (AFM), scanning electron microscopy (SEM) and optical microscopy, UV/vis transmission and photoluminescence (PL) spectra as well as lifetimes were used to characterize the resulting films. The results of XRD indicated that the films began to crystallize at 500 °C and that the crystallinity increased with the elevation of annealing temperatures. Uniform and crack free non-patterned phosphor films were obtained by optimizing the composition of the coating sol, which mainly consisted of grains with an average size of 70 nm and a thickness of 550 nm. Using micro-molding in capillaries technique, we obtained homogeneous and defects-free patterned gel and crystalline phosphor films with different stripe widths (5, 10, 20 and 50 μm). Significant shrinkage (50%) was observed in the patterned films during the heat treatment process. The doped rare earth ions (A) showed their characteristic emission in crystalline Gd2O3 phosphor films due to an efficient energy transfer from Gd2O3 host to them. Both the lifetimes and PL intensity of the rare earth ions increased with increasing the annealing temperature from 500 to 900 °C, and the optimum concentrations for Eu3+, Dy3+, Sm3+, Er3+ were determined to be 5, 0.25, 1 and 1.5 mol% of Gd3+ in Gd2O3 films, respectively. 相似文献
102.
In order to ascertain the metastable phase relation in the Cr2O3-Fe2O3 system, the existing phases were investigated by X-ray analysis using samples obtained by heating the coprecipitated powders for 1 h at 600–1000°C. There was a metastable two-phase region of Cr2O3-rich (CC) and Fe2O3-rich (FC) phases below about 940°C. Equilibrium state of 1:1 composition at 600–900°C was considered to be a single phase of the corundum solid solution. The metastable two-phase CC + FC region was suggested to appear probably due to the compositional inhomogeneity in the coprecipitated powders. 相似文献
103.
Nayve R. Fujii M. Fukugawa A. Takeuchi T. Murata M. Yamada Y. Koyanagi M. 《Journal of microelectromechanical systems》2004,13(5):814-821
This paper describes the fabrication and characterization of a thermal ink jet (TIJ) printhead suitable for high speed and high-quality printing. The printhead has been fabricated by dicing the bonded wafer, which consists of a bubble generating heater plate and a Si channel plate. The Si channel plate consists of an ink chamber and an ink inlet formed by KOH etching, and a nozzle formed by inductively couple plasma reactive ion etching (ICP RIE). The nozzle formed by RIE has squeezed structures, which contribute to high-energy efficiency of drop ejector and, therefore, successful ejection of small ink drop. The nozzle also has a dome-like structure called channel pit, which contributes to high jetting frequency and high-energy efficiency. These two wafers are directly bonded using electrostatic bonding of full-cured polyimide to Si. The adhesive-less bonding provided an ideal shaped small nozzle orifice. Use of the same material (Si substrate) in heater plate and channel plate enables the fabrication of high precision long printhead because no displacement and delamination occur, which are caused by the difference in thermal expansion coefficient between the plates. With these technologies, we have fabricated a 1" long printhead with 832 nozzles having 800 dots per inch (dpi) resolution and a 4 pl. ink drop volume. 相似文献
104.
A.L. Pan H.G. ZhengZ.P. Yang F.X. Liu Z.J. Ding Y.T. Qian 《Materials Research Bulletin》2003,38(5):789-796
Small Ag particles or clusters dispersed mesoporous SiO2 composite films were prepared by a new method: First the matrix SiO2 films were prepared by sol-gel process combined with the dip-coating technique, then they were soaked in AgNO3 solutions followed by irradiation of γ-ray at room temperature and in ambient pressure. The structures of these films were examined by X-ray diffraction (XRD), high-resolution transmission electron microscope (HRTEM), and optical absorption spectroscopy. It has been shown that the Ag particles grown within the porous SiO2 films are very small, and they are isolated and dispersed from each other with very narrow size distributions. With increasing the soaking concentration and an additional annealing, an opposite peakshift effect of the surface plasmon resonance (SPR) was observed in the optical absorption measurements. 相似文献
105.
A multipath structure of a ring resonator is proposed to expand the free spectral range. Simulation work indicates that the multipath ring resonator has 25 GHz-adjacent-channel crosstalk of -41 dB, maximum interchannel crosstalk of -18 dB, and -1 dB bandwidth of 4 GHz for a typical expansion factor of 10. The results show the advantages of characteristics compared with a double-cavity ring resonator and a triple-coupler ring resonator. 相似文献
106.
A novel super-multi-fibre planar lightwave circuit (PLC) connector, designed to connect tens of optical fibres and a PLC for super-multichannel PLC-based optical modules with a receptacle interface, is proposed. This connector employs an angled connection instead of a PC connection. A 0.127 mm pitch 32-fibre connector is also demonstrated, which exhibits low connection and high return losses. 相似文献
107.
L. Sheeney‐Haj‐Ichia S. Pogorelova Y. Gofer I. Willner 《Advanced functional materials》2004,14(5):416-424
Three different configurations of Au‐nanoparticle/CdS‐nanoparticle arrays are organized on Au/quartz electrodes for enhanced photocurrent generation. In one configuration, Au‐nanoparticles are covalently linked to the electrode and the CdS‐nanoparticles are covalently linked to the bare Au‐nanoparticle assembly. The resulting photocurrent, φ = 7.5 %, is ca. 9‐fold higher than the photocurrent originating from a CdS‐nanoparticle layer that lacks the Au‐nanoparticles, φ = 0.8 %. The enhanced photocurrent in the Au/CdS nanoparticle array is attributed to effective charge separation of the electron–hole pair by the injection of conduction‐band electrons from the CdS‐ to the Au‐nanoparticles. Two other configurations involving electrostatically stabilized bipyridinium‐crosslinked Au/CdS or CdS/Au nanoparticle arrays were assembled on the Au/quartz crystal. The photocurrent quantum yields in the two systems are φ = 10 % and φ = 5 %, respectively. The photocurrents in control systems that include electrostatically bridged Au/CdS or CdS/Au nanoparticles by oligocationic units that lack electron‐acceptor units are substantially lower than the values observed in the analogous bipyridinium‐bridged systems. The enhanced photocurrents in the bipyridinium‐crosslinked systems is attributed to the stepwise electron transfer of conduction‐band electrons to the Au‐nanoparticles by the bipyridinium relay bridge, a process that stabilizes the electron–hole pair against recombination and leads to effective charge separation. 相似文献
108.
Yang C.W. Fang Y.K. Lin C.S. Tsair Y.S. Chen S.M. Wang W.D. Wang M.F. Cheng J.Y. Chen C.H. Yao L.G. Chen S.C. Liang M.S. 《Electronics letters》2003,39(21):1499-1501
A novel technique to form high-K dielectric of HfSiON by doping base oxide with Hf and nitridation with NH/sub 3/, sequentially, is proposed. The HfSiON gate dielectric demonstrates excellent device performances such as only 10% degradation of saturation drain current and almost 45 times of magnitude reduction in gate leakage compared with conventional SiO/sub 2/ gate at the approximately same equivalent oxide thickness. Additionally, negligible flatband voltage shift is achieved with this technique. Time-dependent dielectric breakdown tests indicate that the lifetime of HfSiON is longer than 10 years at V/sub dd/=2 V. 相似文献
109.
H.S. Seo Y.G. Choi B.J. Park D.H. Cho K.H. Kim 《Photonics Technology Letters, IEEE》2003,15(9):1198-1200
A flat signal gain over in the entire C- and L-bands by erbium (Er) ions' radiative transition and stimulated Raman scattering in an Er-doped germano-silica fiber can be obtained if proper values of the concentration of Er and background loss in a fiber core are obtained during the fiber fabrication process. The optimized conditions for the flat C- and L-band gain are analyzed as functions of Er concentrations. Even for a low-gain value provided by a germano-silica core fiber with a low Er concentration and an optimum fiber length, a relatively low pump is required to obtain the flat gain band. 相似文献
110.
Vassiliou I. Vavelidis K. Georgantas T. Plevridis S. Haralabidis N. Kamoulakos G. Kapnistis C. Kavadias S. Kokolakis Y. Merakos P. Rudell J.C. Yamanaka A. Bouras S. Bouras I. 《Solid-State Circuits, IEEE Journal of》2003,38(12):2221-2231
The drive for cost reduction has led to the use of CMOS technology in the implementation of highly integrated radios. This paper presents a single-chip 5-GHz fully integrated direct conversion transceiver for IEEE 802.11a WLAN systems, manufactured in 0.18-/spl mu/m CMOS. The IC features an innovative system architecture which takes advantage of the computing resources of the digital companion chip in order to eliminate I/Q mismatch and achieve accurately matched baseband filters. The integrated voltage-controlled oscillator and synthesizer achieve an integrated phase noise of less than 0.8/spl deg/ rms. The receiver has an overall noise figure of 5.2 dB and achieves sensitivity of -75 dBm at 54-Mb/s operation, both referred to the IC input. The transmit error vector magnitude is -33 dB at -5-dBm output power from the integrated power-amplifier driver amplifier. The transceiver occupies an area of 18.5 mm/sup 2/. 相似文献