Series analysis of valid sequences in calculation of synchronisation delay for T-codes

An analysis of the series encountered in Higgie's algorithm of computing average synchronisation delay for T-codes is presented. Convergence for the limiting case of those series is established and an analytical method is developed to verify a result previously found by simulation. These lead to significant improvement in the algorithm, facilitating the search for optimal T-codes for any information source.     

Studies on the corrosion behavior of cerium-implanted zircaloy-4 with GAXRD

In order to study the influence of cerium ion implantation on the aqueous corrosion behavior of zircaloy-4, specimens were implanted by cerium ions with a fluence range from 1×10¹⁶ to 1×10¹⁷ ions/cm² at maximum 150°C, using MEVVA source at an extracted voltage of 40 kV. The valence and elements penetration distribution of the surface layer were analyzed by X-ray photoelectron spectroscopy (XPS) and auger electron spectroscopy (AES) respectively. Glancing angle X-ray diffraction (GAXRD) was employed to examine the phase transformation due to the cerium ion implantation in the oxide films. Three-sweep potentiodynamic polarization measurement was employed to value the aqueous corrosion resistance of zircaloy-4 in a 1 N H₂SO₄ solution. It was found that a significant improvement in the aqueous corrosion behavior of zircaloy-4 implanted with cerium ions compared with that of the as-received zircaloy-4. The improvement effect will declined with raising the implantation fluence. The bigger is the fluence, the less is the improvement. Finally, the mechanism of the corrosion behavior of the cerium-implanted zircaloy-4 is discussed.     

A wafer-level microcap array to enable high-yield microsystem packaging

Packaging represents a significant and expensive obstacle in commercializing microsystem technology (MST) devices such as microelectromechanical systems (MEMS), microopticalelectromechanical systems (MOEMS), microsensors, microactuators, and other micromachined devices. This paper describes a novel wafer-level protection method for MSTs which facilitate improved manufacturing throughput and automation in package assembly, wafer-level testing of devices, and enhanced device performance. The method involves the use of a wafer-sized microcap array. This array consists of an assortment of small caps molded onto a material with adjustable shapes and sizes to serve as protective structures against the hostile environments associated with packaging. It may also include modifications which enhance its adhesion to the MST wafer or increase the MST device function. Depending on the application, the micromolded cap can be designed and modified to facilitate additional functions, such as optical, electrical, mechanical, and chemical functions, which are not easily achieved in the device by traditional means. The fabrication and materials selection of the microcap device is discussed in this paper. The results of wafer-level microcap packaging demonstrations are also presented.     

Mechanical stress control in a VLSI-fabrication process: a method for obtaining the relation between stress levels and stress-induced failures

An ideal fabrication process is designed to minimize mechanical stress in semiconductor devices and to improve device reliability. Mechanical stress levels were predicted by in-house simulations supported by a thin-film database. These stress levels were correlated with stress-induced defects by TEM analysis supported by fail bit addressing on matured megabit SRAMs. Amorphous-doped silicon film with various annealing temperatures were used for the gate electrode to change the mechanical stress in devices and to get the direct relationship between predicted stress levels and stress related defects. The authors describe brief guidelines for suppressing dislocations in the small geometry shallow-trench isolation process utilizing this system. Polysilicon thickness in the W-polycide gate electrode is designed to minimize mechanical stress in the gate oxide and to suppress the gate oxide failure in probe and class tests. Moreover, critical stress generates dislocations during post source/drain ion implantation anneal obtained by a ball indentation method. This indicated that lower temperature anneal is effective in suppressing the dislocations. A two-step anneal was introduced to suppress dislocations and to enable higher ion activation.     

Bottlenecks and strategies of green mold compounds

The mold compound protects integrated circuit (IC) devices from the environmental attacks (e.g., moisture, contaminants) for its lifetime. Driven by market pressure, environmental regulations, the electronics industry is migrating to provide environmental friendly ("green") products and systems. Two major changes associated with this migration are elimination of lead and toxic halogens from the products. Thus, the halogen-free mold compound will be a part of the "green" IC package. The migration to lead-free electronics impacts the current nongreen IC packaging technology, cost and reliability of manufacturers. This article presents the technology challenges and development trend that manufacturers and end users are facing right now with the introduction of green mold compounds.     

A numerical model for induction heating processes coupling electromagnetism and thermomechanics

This paper presents a mathematical and numerical model developed for coupling the various physical phenomena (electromagnetic, thermal and mechanical) taking place in axisymmetrical induction heating processes. All three electromagnetic, thermal and mechanical models are time dependent and take full account of the electromagnetic and thermal non‐linear effect especially with magnetic materials. The electromagnetic problem is discretized and solved in the workpiece, air and inductors. The heat transfer equation and the mechanical equilibrium equations are solved in the workpiece only, both using a finite element method. The mechanical model can take into account thermoelastic–plastic behaviour for the part. The model has been successfully applied to several cases of induction heating. Comparisons between numerical and experimental results show an excellent agreement. Copyright © 2003 John Wiley & Sons, Ltd.     

Low RF noise and power loss for ion-implanted Si having an improved implantation process

Very-low-transmission line noise of <0.25 dB at 18 GHz and low power loss /spl les/0.6 dB at 110 GHz have been measured on transmission lines fabricated on proton-implanted Si. In contrast, a standard Si substrate gave much higher noise of 2.5 dB and worse power loss of 5 dB. The good RF integrity of proton-implanted Si results from the high isolation impedance to ground, as analyzed by an equivalent circuit model. The proton implantation is also done after forming the transmission lines at a reduced implantation energy of /spl sim/4 MeV. This enables easier process integration into current VLSI technology.     

High Mechanical Strength Double‐Network Hydrogel with Bacterial Cellulose

Double‐network (DN) hydrogels with high mechanical strength have been synthesized using the natural polymers bacterial cellulose (BC) and gelatin. As‐prepared BC contains 90 % water that can easily be squeezed out, with no more recovery in its swelling property. Gelatin gel is brittle and is easily broken into fragments under a modest compression. In contrast, the fracture strength and elastic modulus of a BC–gelatin DN gel under compressive stress are on the order of megapascals, which are several orders of magnitude higher than those of gelatin gel, and almost equivalent to those of articular cartilage. A similar enhancement in the mechanical strength was also observed for the combination of BC with polysaccharides, such as sodium alginate, gellan gum, and ι‐carrageenan.     

Neutron Stress Measurement of W‐Fiber Reinforced Cu Composite

Stress measurement methods using neutron and X‐ray diffraction were examined by comparing the surface stresses with internal stresses in the continuous tungsten‐fiber reinforced copper‐matrix composite. Surface stresses were measured by X‐ray stress measurement with the sin²ψ method. Furthermore, the sin²ψ method and the most common triaxal measurement method using Hooke's equation were employed for internal stress measurement by neutron diffraction. On the other hand, microstress distributions developed by the difference in the thermal expansion coefficients between these two phases were calculated by FEM. The weighted average strains and stresses were compared with the experimental results. The FEM results agreed with the experimental results qualitatively and confirmed the importance of the triaxial stress analysis in the neutron stress measurement.