An asymmetric Y-branching circuit using total reflectionfor semiconductor integrated optical circuits

A new structure for a compact optical branching circuit is proposed. An asymmetric Y-branching circuit using total reflection is fabricated on an AlGaAs/GaAs wafer. Good branching operation is observed in a single-mode branching circuit with a branching angle of 45°. The exact origins of loss in the branching circuit are also clarified     

Large scale space diversity in a widely spaced network of meteorscatter communication systems and its application to mobilecommunications

A model is developed for predicting the inherent spatial multiplexing or diversity in a widely dispersed network of meteor scatter receivers. The primary measure, network diversity, is defined as the ratio of the arrival rate of useful trails observed by the entire network to the arrival rate at an average node and is less than the number of receivers in the network. Network diversity is calculated from the ground illumination footprint of individual meteor trails and weighted by the spatial arrival pattern of trails. Predictions using the model are compared to an experiment conducted in the western US. Ramifications on the design of meteor scatter communication systems for very large network applications such as automatic vehicle location and tracking are discussed     

Experimental study on a quasi-optical mode converter for transforming the whispering-gallery mode into a circularly polarized hollow radiation beam

An experiment was carried out for transforming the 120 GHz-TE_12.2 whispering-gallery mode (WGM) into a circularly polarized hollow radiation beam. A hollow beam was formed by reflecting the WGM, which was radiated from a 16 mm radius circular waveguide cut, with an annular mirror having suitable local normal vectors. The experimentally observed field intensity profiles of the reflected wave were in good agreement with calculated results.     

Petrophysical evaluation and volumetric estimation within Central swamp depobelt,Niger Delta,using 3-D seismic and well logs

Estimation of hydrocarbon volume is a critical issue for the economic aspect of the petroleum industry. It is very key in production to estimate reserves and after considerable production, to determine the efficiency of recovery and also as a basis for advanced studies such as reservoir simulations. The petrophysical parameters and hydrocarbon volume within the Central swamp depobelt in the Niger Delta has been evaluated from seismic and well logs data. Two reservoirs, GA and GB were delineated from the logs. The lithologies are sand and shale sequences. The trapping system were interpreted from seismic sections as anticlinal and fault closures. Two horizons and several faults were mapped from the seismic sections. The faults mapped are mainly synthetic and antithetic, characteristic of the Niger Delta. The seismic to well tie shows a fairly good match. The average porosity and permeability estimated for reservoir GA are 20% and 1338 md respectively. Similarly, the estimated average porosity and permeability for reservoir GB are 21% and 1392 md respectively. The results show that the oil bearing zones in the reservoirs are porous and highly permeable. There was no gas present in either of the reservoirs. The estimated initial hydrocarbon in place for reservoirs GA and GB are 57.84 MMSTB and 48.43 MMSTB respectively. The results of the research shows that the field has a decent hydrocarbon potential and can be economically produced from.     

A novel on-chip electrostatic discharge (ESD) protection withcommon discharge line for high-speed CMOS LSIs

A novel on-chip electrostatic discharge (ESD) protection for high-speed CMOS LSI's that operate at higher than 500 MHz has been developed. Introduction of a newly developed common discharge line (CDL) can completely eliminate the protection device influence on the inner circuit operation. This enables minimization of the I/O capacitance by shrinking the dimension of the output transistor, which also serves as a protection device in conventional devices. This new protection (CDL protection) was applied to a high-speed DRAM of which I/O pin capacitance specification is 2 pF. As a result, the ESD tolerance of 4 kV for the charged device model test, 4 kV for the human body model test, and 700 V for the machine model test were obtained. In addition, the DRAM data rate higher than 660 MHz at room temperature was achieved. The results show significant improvement for both ESD and the I/O capacitance, compared with the conventional structure     

Implementation of media processors

Conventional standard processors do not correspond well to the characteristics of multimedia signal processor algorithms. Therefore, special architectural approaches are necessary for multimedia processors to deliver the required high processing power with efficient use of hardware resources. Programmable approaches offer a high degree of flexibility. In order to attain multimedia signal processor performance, architectural strategies for programmable processors are based on parallelization and adaptation principles. The future multimedia signal processor implementation hinges upon an optimal trade-off between the two design spaces, which can be effectively addressed by a codesign approach     

Electromagnetic radiation and scattering at the American Universityof Beirut

This paper presents the work carried out at the American University of Beirut on electromagnetic radiation and scattering, using the characteristic-modes theory. Several problems of various two-dimensional and three-dimensional geometrics have been considered: slots in a plane, slots in a conducting cylinder, a parallel plate-fed slot antenna, an aperture-fed waveguide, a rectangular aperture in a perfectly conducting plane, a cavity-backed aperture. The characteristic modes for each geometry were first computed, and the convergence of the solution was tested for all these problems. A combined characteristic-modes formulation, for the problem of electromagnetic coupling to conducting objects behind arbitrary apertures in a conducting plane, has been developed and used to solve many of these problems     

Visibility of wavelet quantization noise

The discrete wavelet transform (DWT) decomposes an image into bands that vary in spatial frequency and orientation. It is widely used for image compression, measures of the visibility of DWT quantization errors are required to achieve optimal compression. Uniform quantization of a single band of coefficients results in an artifact that we call DWT uniform quantization noise; it is the sum of a lattice of random amplitude basis functions of the corresponding DWT synthesis filter. We measured visual detection thresholds for samples of DWT uniform quantization noise in Y, Cb, and Cr color channels. The spatial frequency of a wavelet is r2^-λ, where r is the display visual resolution in pixels/degree, and λ is the wavelet level. Thresholds increase rapidly with wavelet spatial frequency. Thresholds also increase from Y to Cr to Cb, and with orientation from lowpass to horizontal/vertical to diagonal. We construct a mathematical model for DWT noise detection thresholds that is a function of level, orientation, and display visual resolution. This allows calculation of a “perceptually lossless” quantization matrix for which all errors are in theory below the visual threshold. The model may also be used as the basis for adaptive quantization schemes     

An organic infrared electroluminescent diode utilizing aphthalocyanine film

Electroluminescent (EL) diodes utilizing metal-free phthalocyanine (H₂Pc) have been fabricated by the vacuum evaporation method. The EL characteristics of the diodes depending upon the metal cathode and the characteristics of the diodes with the coevaporated layer with 4-(dicyanomethylene)-2-methyl-6-(p-dimethylaminostyryl)-4H-pyran (DCM) have been investigated. We have demonstrated the infrared electroluminescence originated from the radiative transition corresponding to the Q band of H₂Pc by taking the energy band structure into consideration     

A differential photoconductive AND gate with Be-dopedlow-temperature-grown InGaAs-InAlAs MQW MSM-PD's

A novel photoconductive AND gate that overcomes the problems of: 1) the long tail of photoconductive switches and 2) signal leakage via switch capacitance (signal feedthrough) is proposed. We use Be-doped low-temperature (LT)-grown InGaAs-InAlAs MQW metal-semiconductor-metal photodetectors (MSM-PD's) to get a shorter turn-off time and propose a differential AND gate to cancel the signal feedthrough. A comparison between LT-grown MSM-PD's and those fabricated by ion implantation shows that the LT-grown ones are ultrafast with a full width at half maximum of 5.3 ps and are suitable for low-bias operation. It is experimentally confirmed that the differential AND gate completely cancels the signal feedthrough in the picosecond region. The differential AND gate: with the LT MSM-PD's achieves return-to-zero (RZ) 20 Gb/s AND operation