Bidirectional Transmission Using Tunable Fiber Lasers and Injection-Locked Fabry–PÉrot Laser Diodes for WDM Access Networks

We propose and demonstrate the use of fiber ring lasers and Fabry-Perot laser diodes (FP-LDs) for wavelength-division-multiplexing access networks. The fiber ring laser not only generates downstream data traffic but also serves as the wavelength-selecting injection light source for the FP-LD located at the subscriber site. Moreover, it is wavelength tunable and can be applied to dynamic wavelength assignment networks. The ring laser has a tunable range of 30 nm in the C-band and a power fluctuation smaller than 0.6 dB. For 10-Gb/s downstream and 1.25-Gb/s upstream transmissions over 10-km single-mode fiber, power penalties less than 0.9 and 0.5 dB are demonstrated, respectively. A 40-dB sidemode suppression ratio is obtained for the FP-LD injection-locking at 1544.8 nm.     

Rear‐Passivated Ultrathin Cu(In,Ga)Se2 Films by Al2O3 Nanostructures Using Glancing Angle Deposition Toward Photovoltaic Devices with Enhanced Efficiency

In this work, for the first time, the addition of aluminum oxide nanostructures (Al₂O₃ NSs) grown by glancing angle deposition (GLAD) is investigated on an ultrathin Cu(In,Ga)Se₂ device (400 nm) fabricated using a sequential process, i.e., post‐selenization of the metallic precursor layer. The most striking observation to emerge from this study is the alleviation of phase separation after adding the Al₂O₃ NSs with improved Se diffusion into the non‐uniformed metallic precursor due to the surface roughness resulting from the Al₂O₃ NSs. In addition, the raised Na concentration at the rear surface can be attributed to the increased diffusion of Na ion facilitated by Al₂O₃ NSs. The coverage and thickness of the Al₂O₃ NSs significantly affects the cell performance because of an increase in shunt resistance associated with the formation of Na₂Se_X and phase separation. The passivation effect attributed to the Al₂O₃ NSs is well studied using the bias‐EQE measurement and J–V characteristics under dark and illuminated conditions. With the optimization of the Al₂O₃ NSs, the remarkable enhancement in the cell performance occurs, exhibiting a power conversion efficiency increase from 2.83% to 5.33%, demonstrating a promising method for improving ultrathin Cu(In,Ga)Se₂ devices, and providing significant opportunities for further applications.     

Dithienocarbazole‐Based Ladder‐Type Heptacyclic Arenes with Silicon,Carbon, and Nitrogen Bridges: Synthesis,Molecular Properties,Field‐Effect Transistors,and Photovoltaic Applications

A new class of ladder‐type dithienosilolo‐carbazole ( DTSC ), dithienopyrrolo‐carbazole ( DTPC ), and dithienocyclopenta‐carbazole ( DTCC ) units is developed in which two outer thiophene subunits are covalently fastened to the central 2,7‐carbazole cores by silicon, nitrogen, and carbon bridges, respectively. The heptacyclic multifused monomers are polymerized with the benzothiadiazole ( BT ) acceptor by palladium‐catalyzed cross‐coupling to afford three alternating donor‐acceptor copolymers poly(dithienosilolo‐carbazole‐alt‐benzothiadiazole) ( PDTSCBT) , poly(dithienocyclopenta‐carbazole‐alt‐benzothiadiazole) ( PDTCCBT), and poly(dithienopyrrolo‐carbazole‐alt‐benzothiadiazole) ( PDTPCBT) . The silole units in DTSC possess electron‐accepting ability that lowers the highest occupied molecular orbital (HOMO) and lowest unoccupied molecular orbital (LUMO) energy levels of PDTSCBT , whereas stronger electron‐donating ability of the pyrrole moiety in DTPC increases the HOMO and LUMO energy levels of PDTPCBT . The optical bandgaps (E_g^opt) deduced from the absorption edges of thin film spectra are in the following order: PDTSCBT (1.83 eV) > PDTCCBT (1.64 eV) > PDTPCBT (1.50 eV). This result indicated that the donor strength of the heptacyclic arenes is in the order: DTPC > DTCC > DTSC . The devices based on PDTSCBT and PDTCCBT exhibited high hole mobilities of 0.073 and 0.110 cm² V^?1 s^?1, respectively, which are among the highest performance from the OFET devices based on the amorphous donor‐acceptor copolymers. The bulk heterojunction photovoltaic device using PDTSCBT as the p‐type material delivered a promising efficiency of 5.2% with an enhanced open circuit voltage, V_oc, of 0.82 V.     

Performance of handoff algorithm based on distance and RSSI measurements

The performance of a proposed handoff algorithm based on both the distance of a mobile station to neighboring base stations and the relative signal strength measurements is evaluated. The algorithm performs handoff when the measured distance from the serving base station exceeds that from the candidate base station by a given threshold and if the measured signal strength of the adjacent base station exceeds that of the serving base station by a given hysteresis level. The average handoff delay and average number of handoffs are used as criteria for performance. Numerical results are presented to demonstrate the feasibility of the distance-based handoff algorithm, including results for an additional criterion based on relative signal strength. The proposed algorithm is compared with an algorithm based on absolute and relative signal strength measurements and with a solely distance-based algorithm. It is found that the proposed handoff algorithm performs well in a log-normal fading environment when the distance estimate error is modeled by wide-sense stationary additive white Gaussian noise.     

Characteristics of large‐scale nanohole arrays for thin‐silicon photovoltaics

Nanostructured crystalline silicon is promising for thin‐silicon photovoltaic devices because of reduced material usage and wafer quality constraint. This paper presents the optical and photovoltaic characteristics of silicon nanohole (SiNH) arrays fabricated using polystyrene nanosphere lithography and reactive‐ion etching (RIE) techniques for large‐area processes. A post‐RIE damage removal etching is subsequently introduced to mitigate the surface recombination issues and also suppress the surface reflection due to modifications in the nanohole sidewall profile, resulting in a 19% increase in the power conversion efficiency. We show that the damage removal etching treatment can effectively recover the carrier lifetime and dark current–voltage characteristics of SiNH solar cells to resemble the planar counterpart without RIE damages. Furthermore, the reflectance spectra exhibit broadband and omnidirectional anti‐reflective properties, where an AM1.5 G spectrum‐weighted reflectance achieves 4.7% for SiNH arrays. Finally, a three‐dimensional optical modeling has also been established to investigate the dimension and wafer thickness dependence of light absorption. We conclude that the SiNH arrays reveal great potential for efficient light harvesting in thin‐silicon photovoltaics with a 95% material reduction compared to a typical cell thickness of 200 µm. Copyright © 2012 John Wiley & Sons, Ltd.     

Unicast-based inference of network link delay distributions with finite mixture models

Providers of high quality-of-service over telecommunication networks require accurate methods for remote measurement of link-level performance. Recent research in network tomography has demonstrated that it is possible to estimate internal link characteristics, e.g., link delays and packet losses, using unicast probing schemes in which probes are exchanged between several pairs of sites in the network. We present a new method for estimation of internal link delay distributions using the end-to-end packet pair delay statistics gathered by back-to-back packet-pair unicast probes. Our method is based on a variant of the penalized maximum likelihood expectation-maximization (PML-EM) algorithm applied to an additive finite mixture model for the link delay probability density functions. The mixture model incorporates a combination of discrete and continuous components, and we use a minimum message length (MML) penalty for selection of model order. We present results of Matlab and ns-2 simulations to illustrate the promise of our network tomography algorithm for light cross-traffic scenarios.     

Utilization of self-injection Fabry–Perot laser diode for long-reach WDM-PON

In this investigation we propose and demonstrate a wavelength widely tunable laser source employing a self-injected Fabry–Perot laser diode (FP-LD) for long-reach wavelength-division-multiplexed passive optical network (WDM-PON). By using a tunable bandpass filter and an optical circulator inside the gain cavity, a stable and single-longitudinal-mode (SLM) laser output is achieved. Besides, the proposed laser sources are directly modulated at 2.5 Gb/s for both downlink and uplink transmissions of 85 km single mode fiber (SMF) in PON without dispersion compensation.     

Experimental demonstration of CW light injection effect in upstream traffic TDM-PON

High capacity time-division-multiplexed passive optical network (TDM-PON) is an emerging fiber access network that deploys optical access lines between a carrier’s central office (CO) and a customer sites. In this investigation, we demonstrate and analyze the continuous wave (CW) upstream effect in TDM-PONs. Besides, we also propose and design a protection apparatus in each optical network unit (ONU) to avoid a CW upstream traffic in TDM-PONs due to sudden external environment change or ONU failure. When an upstream CW injection occurs in TDM access network, the protection scheme can stop the CW effect within a few ms to maintain the entire data traffic.     

Ultra‐Thin Layered Ternary Single Crystals [Sn(SxSe1−x)2] with Bandgap Engineering for High Performance Phototransistors on Versatile Substrates

2D ternary semiconductor single crystals, an emerging class of new materials, have attracted significant interest recently owing to their great potential for academic interest and practical application. In addition to other types of metal dichalcogenides, 2D tin dichalcogenides are also important layered compounds with similar capabilities. Yet, multi‐elemental single crystals enable to assist multiple degrees of freedom for dominant physical properties via ratio alteration. This study reports the growth of single crystals Se‐doped SnS₂ or SnSSe alloys, and demonstrates their capability for the fabrication of phototransistors with high performance. Based on exfoliation from bulk high quality single crystals, this study establishes the characteristics of few‐layered SnSSe in structural, optical, and electrical properties. Moreover, few‐layered SnSSe phototransistors are fabricated on both rigid (SiO₂/Si) and versatile polyethylene terephthalate substrates and their optoelectronic properties are examined. SnSSe as a phototransistor is demonstrated to exhibit a high photoresponsivity of about 6000 A W^?1 with ultra‐high photogain ≈8.8 × 10⁵, fast response time ≈9 ms, and specific detectivity (D*) ≈8.2 × 10¹² J. These unique features are much higher than those of recently published phototransistors configured with other few‐layered 2D single crystals, making ultrathin SnSSe a highly qualified candidate for next‐generation optoelectronic applications.     

Structural and electronic properties of CuInSe2

Structural investigation on monocrystalline CuInSe₂ samples has been made. From the single crystal results, the space group of CuInSe₂ was confirmed to be Iˉ42d and the crystal solidification direction was investigated. Compositional uniformity of the ingots was established by EPMA and it was found that the indium concentration was greater than that for copper. Systematic annealing experiments were carried out in vacuum at different temperatures (as low as 160° C) and for different times. Large variation in resistivity was observed after the annealing treatment. P-type samples were found to convert to n-type after the heat-treatments.