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41.
1.27-/spl mu/m InGaAs: Sb-GaAs-GaAsP vertical-cavity surface-emitting lasers (VCSELs) were grown by metal-organic chemical vapor deposition and exhibited excellent performance and temperature stability. The threshold current changes from 1.8 to 1.1 mA and the slope efficiency falls less than /spl sim/35% as the temperature raised from room temperature to 70/spl deg/C. With a bias current of only 5 mA, the 3-dB modulation frequency response was measured to be 8.36 GHz, which is appropriate for 10-Gb/s operation. The maximal bandwidth is measured to be 10.7 GHz with modulation current efficiency factor (MCEF) of /spl sim/5.25 GHz/(mA)/sup 1/2/. These VCSELs also demonstrate high-speed modulation up to 10 Gb/s from 25/spl deg/C to 70/spl deg/C.  相似文献   
42.
This review reports the different genetic factors that have been identified either as risk factor for Alzheimer's disease (AD) or directly causing the disease. First are reviewed epidemiological data and biological mechanisms about the apoplipoprotein E gene allele epsilon 4 that is a major risk factor for Alzheimer's disease. The second part describes the mutations responsible for early-onset autosomal dominant AD found in three different genes. The gene located on chromosome 21 encodes the amyloid precusor protein (APP). The presenilin 1 and presenilin 2 genes, located on chromosome 14 and 1 respectively, encode not yet known membrane proteins.  相似文献   
43.
A psaC deletion mutant of the unicellular cyanobacterium Synechocystis sp. PCC 6803 was utilized to incorporate site-specific amino acid substitutions in the cysteine residues that ligate the FA and FB iron-sulfur clusters in Photosystem I (PS I). Cysteines 14 and 51 of PsaC were changed to aspartic acid (C14DPsaC, C51DPsaC, C14D/C51DPsaC), serine (C14SPsaC, C51SPsaC), and alanine (C14APsaC, C51APsaC), and the properties of FA and FB were characterized by electron paramagnetic resonance spectroscopy and time-resolved optical spectroscopy. The C14DPsaC-PS I and C14SPsaC-PS I complexes showed high levels of photoreduction of FA with g values of 2.045, 1. 944, and 1.852 after illumination at 15 K, but there was no evidence of reduced FB in the g = 2 region. The C51DPsaC-PS I and C51SPsaC-PS I complexes showed low levels of photoreduction of FB with g values of 2.067, 1.931, and 1.881 after illumination at 15 K, but there was no evidence of reduced FA in the g = 2 region. The presence of FB was inferred in C14DPsaC-PS I and C14SPsaC-PS I, and the presence of FA was inferred in C51DPsaC-PS I and C51SPsaC-PS I by magnetic interaction in the photoaccumulated spectra and by the equal spin concentration of the irreversible P700(+) cation generated by illumination at 77 K. Flash-induced optical absorbance changes at 298 K in the presence of a fast electron donor indicate that two electron acceptors function after FX in the four mutant PS I complexes at room temperature. These data suggest that a mixed-ligand [4Fe-4S] cluster is present in the mutant sites of C14X-PS I and C51X-PS I (where X = D or S), but that the proposed spin state of S = 3/2 renders the resonances undetectable in the g = 2 region. The C14APsaC-PS I, C51APsaC-PS I and C14D/C51DPsaC-PS I complexes show only the photoreduction of FX, consistent with the absence of PsaC. These results show that only those PsaC proteins that contain two [4Fe-4S] clusters are capable of assembling onto PS I cores in vivo.  相似文献   
44.
The state of thermal stresses for a periodic two-layered elastic space weakened by an interface thermally insulated Griffith crack and loaded by concentrated line heat sources is investigated. The analysis is performed within the framework of the homogenized model with microlocal parameters. The stress intensity factors at the crack tips are determined. Two examples of the application of the results obtained are detailed.  相似文献   
45.
46.
A GaAs single-mode channel-waveguide cutoff modulator that utilizes a GaAs-GaAlAs heterostructure and a linear array of such modulators are reported for the first time. We have measured a cutoff voltage as low as 9.0 V and an extinction ratio greater than 20 dB at an optical wavelength of 1.3 μm in a basic modulator that utilized a GaAs-Ga0.93Al0.07As heterostructure with a 0.9 μm thick GaAs epitaxial layer together with a ridge channel 2.5 mm in length and 5.0 μm in width. We have also succeeded in the realization of a high packing density (500 channels/cm) linear array of such cutoff modulators in the same GaAs substrate with equally satisfactory results. An RF bandwidth of 2.5 GHz has also been measured with the elementary modulator of such array. As in the case for LiNbO3substrates, the GaAs-based integrated optic modules that result from integration of such cutoff modulator arrays, microlens arrays, and planar acoustooptic or electrooptic Bragg diffraction grating arrays in a common substrate may be used to perform multiport switching, computing, and RF signal processing.  相似文献   
47.
The present study was performed to examine the central effects of antidepressants on nociceptive jaw opening reflex after intracisternal injection. we also investigated the mechanisms of central antinociceptive action of intracisternal antidepressants. We recorded the jaw opening reflex in freely moving rats and chose to administer antidepressants intracisternally in order to eliminate the effects of anesthetic agents on the pain assessment and evaluate the importance of the spinal site of action of antidepressants. After intracisternal injection of 15 microg imipramine, digastric electromyogram (dEMG) was decreased to 76+/-6% of the control. Intracisternal administration of 30 microg desipramine, nortriptyline or imipramine suppressed dEMG remarkably to 48+/-2, 27+/-8, or 25+/-5% of the control, respectively. The suppression of dEMG was maintained for 50 min. L-NG-Nitroarginine methyl ester (NAME) blocked the suppression of dEMG from 32+/-2 to 81+/-5% of the control. These results indicate that antidepressants produce antinociception through central mechanisms in the orofacial area. The central NO pathway seems to be involved in the antinociception of intracisternal antidepressants at supraspinal sites.  相似文献   
48.
49.
A new method of fabricating a-Si:H TFT with etching-stop structure has been proposed. Only one plasma-enhanced chemical vapor deposition is required in this new method and a PH3/H2 plasma treatment during the deposition has been used to form the TFT contact and thus saved another plasma deposition. With this method, a TFT of 500 Å active layer has been fabricated successfully. The drain current and saturation mobility of this device is 2.4×10-7 A and 0.1 cm2/V sec, respectively, which is comparable to the conventional fabricating method. The plasma treatment will also form an additional leakage path on the TFT top surface and increase the TFT subthreshold slope. However, a current of less than 1 pA at VG=-2.4 V can still be obtained. The possible mechanism of the contact formation by the plasma treatment is also discussed  相似文献   
50.
Ramamoorthy  C.V. Tsai  W.-T. 《Computer》1996,29(10):47-58
Software is the key technology in applications as diverse as accounting, hospital management, aviation, and nuclear power. Application advances in different domains such as these-each with different requirements-have propelled software development from small batch programs to large, real-time programs with multimedia capabilities. To cope, software's enabling technologies have undergone tremendous improvement in hardware, communications, operating systems, compilers, databases, programming languages, and user interfaces, among others. In turn, those improvements have fueled even more advanced applications. Improvements in VLSI technology and multimedia, for example, have resulted in faster, more compact computers that significantly widened the range of software applications. Database and user interface enhancements, on the other hand, have spawned more interactive and collaborative development environments. Such changes have a ripple effect on software development processes as well as on software techniques and tools. In this article, we highlight software development's crucial methods and techniques of the past 30 years  相似文献   
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