The flow field is a pivotal part to manage the transport of water and gas in proton exchange membrane fuel cell. However, the reported water measurement methods (e.g., X-ray and electrochemical impedance spectroscopy (EIS)) cannot give a comprehensive understanding water distribution in the flow field, resulting in challenges in optimizing the channel design and enhancing fuel cell performance. Therefore, we propose a water measurement method combining the X-ray radiography with EIS to investigate the effect of different operating conditions on the growth law and distribution of liquid water in parallel and serpentine flow fields. The attenuation coefficient of liquid water to X-ray is calibrated with constant tube-current and tube-voltage of X-ray generator. Besides, the parallel flow field with hydrophobic treatment is studied. The results show that the water accumulation of the parallel flow field is far more than the serpentine flow field, and the water content of the middle region is higher than that of other regions in the parallel flow field. Furthermore, operating conditions (cathode inlet gas flow rate, inlet gas humidity, and back pressure) have little effect on the liquid water content of the middle region in the parallel flow field. The polarization curve, EIS result, and X-ray radiography show that the performance and water drainage capacity of the hydrophobic parallel flow field are better than the normal one.
The low dark current, high responsivity and high specific detectivity could be preferably achieved in detectors based on junctions, owing to the efficient constraint of carriers. Compared with the other junctions, planar Schottky junctions have simple structures and technological demands and are easy integrated. Herein, in this work, we prepared the β-Ga_2O_3 thin film by metalorganic chemical vapor deposition method to construct planar Ti/β-Ga_2O_3/Ni Schottky photodiode detectors with different onstate resistances. Fortunately, all the devices exhibit state-of-the-art performances, such as responsivity of 175–1372 A W~(-1),specific detectivity of 10~(14) Jones and external quantum efficiency of 85700%–671500%. In addition, the dependences of device performances on the on-state resistances indicate that the higher dark currents, photocurrents and photoresponsivities may well be obtained when on-state resistance is smaller, due to the less external power is used to overcome the impendence and condensance at the Ti/β-Ga_2O_3 and Ni/β-Ga_2O_3 interfaces, but contributing to higher electric current flow both in the dark and under illuminations. 相似文献
