Design of a 3780-point IFFT processor for TDS-OFDM

This correspondence presents a design of 3780-point IFFT processor for TDS-OFDM terrestrial DTV transmitter using FPGA. It demonstrates the algorithm design and error analysis of the processor, which can achieve a throughput of 7.56M complex IFFT operations per second. This design meets the signal-to-quantization noise ratio requirement of the TDS-OFDM system. It consists of two FPGA and one dual-port RAM. The data stream pipeline algorithm is implemented     

大口径管道带水抢修

包头地区1996年5月3日发生6.4级强烈地震,给包钢生产造成重大损失,地震发生后,包钢生产用动力系统发生多起事故.本文针对4#高炉工业回水管道(φ1220×10)震后发生断裂,如何在保证不停止生产的前提下,采取什么措施进行管道带水抢修进行了阐述,本文是经过现场抢修过程总结而来,对今后大口径管道带水抢修提供了宝贵的经验.     

浅谈中承式钢管拱肋单拱桥的施工方法

右江平圩大桥钢管拱肋的制作、拼装、吊装、混凝土灌注的施工方法及注意事项 ,事故原因分析及处理。     

用变角XPS定量分析研究GaAs光电阴极激活工艺

用变角X射线光电子能谱 (XPS)技术分析了GaAs光电阴极的激活工艺 ,定量计算了阴极表面激活层和界面氧化层的厚度和组成。界面氧化物是由于O原子穿过激活层 ,扩散到GaAs与 (Cs,O)激活层的界面上而形成的。导入过量O会增加O GaAs界面层的厚度 ,而对 (Cs,O)激活层厚度影响较小。在激活过程中 ,严格控制和减少每次导入的O量是减少界面氧化层厚度 ,提高灵敏度的重要途径。在第一步激活后的阴极样品 ,通过较低温度的加热和再激活 ,能获得比第一步高出 30 %的光电灵敏度的原因是较低温度加热减少了界面氧化层的厚度和界面势垒     

新型哈氏合金G—30的耐蚀性能与工业应用

文章叙述了新型镍基耐蚀哈氏合金G-30在不同介质中的耐蚀性能以及工业应用,综合分析了该合金应用的经济性及前景。     

W片二向色性角β测定中的两个问题

本文讨论在测定W片二向色性角β的实验装置中的两个问题:W片的e轴与起偏器P_1透振方向间夹角θ偏离45°时引起的误差;起偏器P_1、检偏器P_2的消光比ρ对测量精度的影响。     

Comparative severity of respiratory lesions of sialodacryoadenitis virus and Sendai virus infections in LEW and F344 rats

In several chronic diseases, lesions are more severe in LEW rats than in F344 rats. To determine whether or not acute viral diseases also are more severe in LEW rats than in F344 rats, we inoculated 6-7-week-old LEW and F344 rats with 10(7.2) cell culture infective units of sialodacryoadenitis virus or 10(4.7) infective units of Sendai virus. Twenty-four rats of each strain were given each virus. Lesions in nasal passages, tracheas, intrapulmonary airways, and pulmonary alveoli in 6 or 12 rats inoculated with each virus were assessed by scoring 5, 10, and 14 days after inoculation. Both viruses caused typical patchy necrotizing rhinitis, tracheitis, bronchitis, and bronchiolitis, with multifocal pneumonitis, in rats of both strains. Mean lesion indices for LEW rats given sialodacryoadenitis virus were significantly different from those for F344 rats for nasal passages on days 10 (0.999 vs. 0.680) and 14 (0.736 vs. 0.278), bronchi on day 5 (0.479 vs. 0.361), and alveoli on day 5 (0.677 vs. 0.275). Lesion indices for LEW rats given Sendai virus were significantly different from those for F344 rats for nasal passages on days 10 (1.000 vs. 0.611) and 14 (0.778 vs. 0.583); trachea on day 10 (0.625 vs. 0.028); bronchi on days 5 (0.476 vs. 0.331), 10 (0.123 vs. 0.013), and 14 (0.038 vs. 0); and alveoli on days 5 (0.413 vs. 0.114) and 10 (0.185 vs. 0.020). Thus, at the tested doses, both viruses caused more severe respiratory tract lesions in LEW rats than in F344 rats.     

Influence of lattice self-heating and hot-carrier transport ondevice performance

As device technologies improve, the traditional drift-diffusion transport model becomes inadequate to predict the performance of state-of-the-art semiconductor devices. The reasons are believed to be the larger field and field gradient inside advanced devices which cause lattice heating and hot carrier nonlocal transport phenomena. For more accurate prediction on device performance, a new device simulator capable of full thermodynamic simulation was developed. The carrier and carrier energy transport equations are directly derived from the Boltzmann transport equation, and the energy transfer among electrons, holes and crystal lattice takes into account most of the possible mechanisms. This simulator was used to simulate the DC behavior of a BJT and a half-micron NMOS. The simulation results show that for advanced devices, not only the drift-diffusion model becomes inadequate, but including only one of the two thermal effects results in error in simulated device characteristics     

An approximate method for computing performance-related reliability of gracefully degrading systems

Using existing methods, the computation of performance-related reliability (PRR) of large-scale gracefully degrading systems is very tedious and time consuming. In this paper, the behaviour of such systems is respectively modeled as two types of diffusion processes according to their reconfiguration coverage. If the coverage is 1 (i.e. the reconfiguration is always successful), it is modeled as a regular diffusion. If, on the other hand, the coverage is less than one, it is modeled as diffusion with killing. Kolmogorov backward equations for regular diffusion processes and for diffusions with killing are then applied to compute the PRR. The methods have been applied in several examples, and the results satisfactorily agree with the accurate results.