Electrospun poly(L‐lactide)/poly(ε‐caprolactone) blend fibers and their cellular response to adipose‐derived stem cells

Polymer blending is one of the most effective methods for providing new, desirable biocomposites for tissue‐engineering applications. In this study, electrospun poly(L ‐lactide)/poly(ε‐caprolactone) (PLLA/PCL) blend fibrous membranes with defect‐free morphology and uniform diameter were optimally prepared by a 1 : 1 ratio of PLLA/PCL blend under a solution concentration of 10 wt %, an applied voltage of 20 kV, and a tip‐to‐collector distance of 15 cm. The fibrous membranes also showed a porous structure and high ductility. Because of the rapid solidification of polymer solution during electrospinning, the crystallinity of electrospun PLLA/PCL blend fibers was much lower than that of the PLLA/PCL blend cast film. To obtain an initial understanding of biocompatibility, adipose‐derived stem cells (ADSCs) were used as seed cells to assess the cellular response, including morphology, proliferation, viability, attachment, and multilineage differentiation on the PLLA/PCL blend fibrous scaffold. Because of the good biocompatibility and nontoxic effect on ADSCs, the PLLA/PCL blend electrospun fibrous membrane provided a high‐performance scaffold for feasible application in tissue engineering using ADSCs. © 2010 Wiley Periodicals, Inc. J Appl Polym Sci, 2011     

High-performance fully depleted silicon nanowire (diameter /spl les/ 5 nm) gate-all-around CMOS devices

This paper demonstrates gate-all-around (GAA) n- and p-FETs on a silicon-on-insulator with /spl les/ 5-nm-diameter laterally formed Si nanowire channel. Alternating phase shift mask lithography and self-limiting oxidation techniques were utilized to form 140- to 1000-nm-long nanowires, followed by FET fabrication. The devices exhibit excellent electrostatic control, e.g., near ideal subthreshold slope (/spl sim/ 63 mV/dec), low drain-induced barrier lowering (/spl sim/ 10 mV/V), and with I/sub ON//I/sub OFF/ ratio of /spl sim/10/sup 6/. High drive currents of /spl sim/ 1.5 and /spl sim/1.0 mA//spl mu/m were achieved for 180-nm-long nand p-FETs, respectively. It is verified that the threshold voltage of GAA FETs is independent of substrate bias due to the complete electrostatic shielding of the channel body.     

Efficacy of Trust-Building Tactics in Construction Mediation

Distrust hinders disputing parties and mediators from achieving mediation success. Mediators therefore often use different trust-building tactics to generate some degree of trust in themselves and in the mediation process. This paper reports a study that identified the trust-building tactics used by construction mediators and examined the efficacy of these tactics with respect to their outcomes. Three study stages were designed. With reference to the mediation model of Sloan (1998), trust-building tactics and outcomes were first identified in Stage I. Next, the data were collected from accredited mediators with a questionnaire survey in Stage II. The collected data were then validated via reliability assessments in Stage III. With the use of multiple regression analyses, the efficacy of the trust-building tactics was examined by relating these tactics to their outcomes. The findings of this study suggest that the trust-building tactics used in Step 4 (i.e., explore interests) of Sloan’s (1998) mediation model are influential in developing trust among disputing parties and that they can also act as a time-saving tool in the mediation process. Furthermore, it was found that mediators can earn trust by adopting the trust-building tactics used in Step 3 (i.e., issues and trust) of Sloan’s (1998) model. These tactics can also serve to improve the relationships between the disputing parties. The results show that the trust-building tactics used in the final step (i.e., solutions) of Sloan’s (1998) model seem to have low efficacy in developing trust among disputing parties.     

Dielectric-breakdown-induced epitaxy: a universal breakdown defect in ultrathin gate dielectrics

The breakdown phenomena in SiO/sub x/N/sub y/ (EOT=20 /spl Aring/) gate dielectric under a two- stage constant voltage stress in inversion mode are physically analyzed with the aid of transmission electron microscopy. The results show that dielectric-breakdown-induced epitaxy (DBIE) remains as one of the major failure defects responsible for gate dielectric breakdown evolution even for a stress voltage as low as 2.5 V. Based on the results, the same failure mechanism i.e., presence of DBIE would be responsible for the degradation in ultrathin gate dielectrics for gate voltage below 2.5 V. It is believed that DBIE will be present in MOSFETs failed at nominal operating voltage.     

Aggregate nearest neighbor queries in road networks

Aggregate nearest neighbor queries return the object that minimizes an aggregate distance function with respect to a set of query points. Consider, for example, several users at specific locations (query points) that want to find the restaurant (data point), which leads to the minimum sum of distances that they have to travel in order to meet. We study the processing of such queries for the case where the position and accessibility of spatial objects are constrained by spatial (e.g., road) networks. We consider alternative aggregate functions and techniques that utilize Euclidean distance bounds, spatial access methods, and/or network distance materialization structures. Our algorithms are experimentally evaluated with synthetic and real data. The results show that their relative performance depends on the problem characteristics.     

Electro-elastic characteristics of asymmetric rectangular piezoelectric laminae

The electro-elastic characteristics of clamped rectangular piezoelectric laminated plates were analytically investigated. A fully covered electrode piezoelectric layer was laminated on an elastic layer to form a nonsymmetrical laminated plate. Using the electro-elastic theory with the Kirchhoff-Love hypothesis, formulation of analyses for mechanical, electrical, and electromechanical characteristics of the laminae are presented. Numerical analysis was carried out using the extended Kantorovich method to yield eigenvalues and eigenfunctions. Theoretical predictions of dynamic characteristics were validated by comparing results with finite element analysis data. The calculated natural frequencies are presented in easy-to-use figures that are useful for sensor and actuator design in microelectromechanical systems (MEMS).     

Sentences over Integral Domains and Their Computational Complexities

LetRbe a Hilbertian domain and letKbe its fraction field. Letψ(x₁, …, x_n, y) be a quantifier free arithmetical formula overR. We may also takeψ(x₁, …, x_n, y) to be an arithmetical formula overK[x₁, …, x_n] and write it asψ(y). In this paper we show that ifRhas enough non-units and x₁…x_n y ψ(x₁, …, x_n, y), called an ⁿ  sentence, is true inR, then y ψ(y) is true inK[x₁, …, x_n]. Also, ifR=K[T], whereKis an infinite integral domain andx₁…x_n y ψ(x₁, …, x_n, y)is true inR, then y ψ(y) is true inR[x₁, …, x_n]. These results are applied to find the upper and lower bounds of the time complexities of various decision problems on diophantine equations with parameters and arithmetical sentences. Some of the results are: 1. The decision problem of sentences and diophantine equations with parameters over the ring of integers of a global field are co-NP-complete. 2. The decision problem of sentences over the ring of integers of a global field is NP-complete. 3. LetKbe an infinite domain, the time complexities of the decision problems of equations with parameters and sentences over the polynomial ringK[t] are polynomial time reducible to factoring polynomials overK. 4. The decision problem of sentences over all algebraic integer rings is in P. 5. The decision problem of sentences over all integral domains with characteristic 0 is in P. 6. The time complexity of the decision problem of sentences over all integral domains is polynomial time reducible to factoring integers overZand factoring polynomials over finite fields.