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31.
Previous work has shown that prebreakdown, electrical aging, and breakdown phenomena are directly associated with charge carriers injected from electrical contacts and their subsequent dissociative trapping and recombination. In addition, the energy released from each trapping or recombination event is dissipated in the breaking of the bonds of macromolecules, thus forming free radicals and new traps in the electrically stressed insulating polymers, as predicted by Kao's model. It is this gradual degradation process that leads to electrical aging and destructive breakdown. New experimental results are presented to confirm previous findings and a new approach to inhibit the degradation process by the incorporation of suitable dopants into the polymer. The concentration of free radicals in the polymer increases with an increasing electric field at a fixed stress time of 250 h and with increasing stress time at a fixed electric field of 833 kV cm?1. The concentration of free radicals is directly related to the concentration of new traps created by stress. However, when suitable dopants are incorporated, the initiation voltage for the occurrence of electrical treeing and the breakdown strength are both increased. The dopants tend to create shallow traps and have little effect on the deep trap concentration. This implies that the dopants act as free‐radical scavengers that tend to satisfy the unpaired electrons of the broken bonds, which create new acceptor‐like electron traps and new shallow traps. By doing so, the shallow traps screen the deep traps, thereby reducing the energy released during trapping and recombination and the probability of breaking the macromolecular bonds and causing structural degradation. © 2003 Wiley Periodicals, Inc. J Appl Polym Sci 89: 3416–3425, 2003  相似文献   
32.
The vapour phase compositions of a series of pack powder mixtures containing elemental Al and Hf or W powders as depositing sources and CrCl3·6H2O or AlF3or CrF3as activators were analysed in an attempt to further develop the pack cementation process to codeposit Al and Hf or W to form diffusion coatings on nickel base superalloys. The results suggested that Al could be codeposited with Hf, but not with W, from the vapour phase. Compared with both AlF3and CrF3, CrCl3·6H2O has been shown to be a more suitable activator for codepositing Al with Hf. The optimum coating temperature was identified to be in the range of 1050°C to 1150°C. Based on the thermochemical analysis, a series of coating deposition studies were undertaken, which confirmed that codeposition of Al and Hf could be achieved at a deposition temperature of 1100°C in the CrCl3·6H2O activated packs containing elemental Al and Hf powders. The coating obtained had a multilayer structure consisting of a Ni7Hf6Al16top layer and a NiAl layer underneath, followed by a diffusion zone, which revealed that the coating was formed by the outward Ni diffusion. It is suggested that the compositions suitable for codeposition of Al and Hf could be effectively identified by comparing the vapour pressures of HfCl4and HfCl3with that of AlCl in the packs activated by chloride salts. It has also been experimentally demonstrated that, although W could not be deposited from the vapour phase, a high volume of fine W particles can be entrapped into the outer NiAl coating layer formed by the outward Ni diffusion using a modified pack configuration. This leads to the formation of a composite coating layer with W particles evenly distributed in a matrix of NiAl. It is suggested that this modified pack process could be similarly applied to develop nickel aluminide coatings containing other refractory metals that may not be codeposited with Al from the vapour phase.  相似文献   
33.
Several kinds of waveguide components such as curved waveguide bends, arbitrary angle waveguide bends and T-junctions have been analyzed with boundary element method in this paper. A new discretization method for the boundary element method to solve the waveguide discontinuities has been given. The numerical results obtained agree well with the experimental results and numerical results in other literature. Especially, the scattering characteristics of Forded E-, H-plane T-junctions in 3mm band have been analyzed using boundary element method and the calculation results are presented.  相似文献   
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35.
The oxidation/sulphidation behaviour of a Ti‐46.7Al‐1.9W‐0.5Si alloy with a TiAl3 diffusion coating was studied in an environment of H2/H2S/H2O at 850oC. The kinetic results demonstrate that the TiAl3 coating significantly increased the high temperature corrosion resistance of Ti‐46.7Al‐1.9W‐0.5Si. The SEM, EDX, XRD and TEM analysis reveals that the formation of an Al2O3 scale on the surface of the TiAl3‐coated sample was responsible for the enhancement of the corroison resistance. The Ti‐46.7Al‐1.9W‐0.5Si alloy was also modified by Nb ion implantation. The Nb ion implanted and as received sampels were subjected to cyclic oxidation in an open air at 800oC. The Nb ion implantation not only increased the oxidation resistance but also substantially improved the adhesion of scale to the substrate.  相似文献   
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37.
The SiC/Al graded composite was fabricated by powder metallurgy processing and its fatigue crack growth behavior was studied. The volume percentage of SiC particulates was distributed from 5 to 30% layer by layer on the cross section. Since the aluminium was dissolved together, there was no evident interface between the two layers with different volume fraction of SiC particulates. Fatigue crack growth was in direction of from 5 to 30% SiC layers under sinusoidal wave-form. The retardation of fatigue crack growth was found when crack propagated from low volume fraction of SiC to high volume fraction of SiC. The crack deflection and branching between two layers were observed, which decreased crack growth rates. In view of crack tip driving force, the plasticity mismatch between the layers shielded crack tip driving force, i.e. decreased the effective J-integral at the tip of the crack as the plastic zone of the crack tip spread from the weaker material into the stronger material.  相似文献   
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39.
New information systems and recent applications (grid computing, Web Services, and so on) are often distributed, large-scale, open, heterogeneous, and characterized by a dynamic environment. To model these complex systems, researchers have spent much effort during the last few years on multiagent systems. The aim is to model complex distributed systems as a set of (possibly organized) software agents that interact in a common environment. The decomposition of a system into a number of agents lets the system react and adapt better in a changing environment. Moreover, organized structures ("social" structures) can emerge from interactions between agents, which in turn constrain and coordinate the agents' behavior. A multiagent system takes its metaphors of interaction from social systems rather than using the metaphor of the isolated thinker that early artificial intelligence researchers preferred. An important issue when dealing with this increasing complexity is to build adaptive agents and multiagent systems. Agents and multiagent systems must be aware of their own capabilities and of changes to other agents and their environment. To remain effective, agents must be able to adapt their structures and knowledge while they execute.  相似文献   
40.
A simple template‐free high‐temperature evaporation method was developed for the growth of crystalline Si microtubes for the first time. As‐grown Si microtubes were characterized using X‐ray diffraction, scanning electron microscopy, transmission electron microscopy, and room‐temperature photoluminescence. The lengths of the Si tubes can reach several hundreds of micrometers; some of them have lengths on the order of millimeters. Each tube has a uniform outer diameter along its entire length, and the typical outer diameter is ≈ 2–3 μm. Most of the tubes have a wall thickness of ≈ 400–500 nm, though a considerable number of them exhibit a very thin wall thickness of ≈ 50 nm. Room‐temperature photoluminescence measurement shows the as‐synthesized Si microtubes have two strong emission peaks centered at ≈ 589 nm and ≈ 617 nm and a weak emission peak centered at ≈ 455 nm. A possible mechanism for the formation of these Si tubes is proposed. We believe that the present discovery of the crystalline Si microtubes will promote further experimental studies on their physical properties and smart applications.  相似文献   
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