TD-SCDMA网络基于客户感知的掉话率相关定时器优化分析

TD-SCDMA网络处于逐步完善覆盖的时期,为了更好地提升用户使用感知,需要网优工程师及时发现网络中的问题,尤其是严重影响客户感知的掉话问题。针对TD-SCDMA网络中掉话率相关定时器、计数器设置过大导致的"网管统计信息不准确"的问题进行优化分析,并提出一种切实有效的优化方法。     

基金迎来变革，抓住转型机遇 — 国家自然科学基金2010 年半导体科学领域申请项目概况分析

2011年度基金资助形式将有较大变化,面上项目资助期限将改为四年,平均资助强度将达到60多万元,重点项目资助期限改为五年,资助强度达300万元,敬请各位申请人认真阅读基金项目指南,或咨询单位科研管理部门,以了解详细情况。2010年度半导体科学领域申请项目数维持了稳步增长的势头,半导体晶体与薄膜材料、集成电路设计与测试、半导体光电子器件申请项目数仍然比较集中,近两年来一直处于半导体学科前列。半导体光电子器件、半导体电子器件和新型信息器件申请项目数比2009年度有明显增长,而半导体物理申请项目数稍有下降。由于我们倡导大家关注器件制备和基础工艺中的关键科学问题,2010年针对这方面的研究有所提升,今后若干年内我们仍将引导大家加强这方面的研究,在评审过程和资助结果中也必将会有所体现。本文简述了2010年半导体科学领域基金申请与资助概况,分析近期动态及学科对策,并附2010年半导体科学领域资助的项目清单,供有关科技工作者参考。     

Structure and Thermoelectric Properties of Te- and Ge-Doped Skutterudites CoSb<Subscript>2.875−<Emphasis Type="Italic">x</Emphasis></Subscript>Ge<Subscript>0.125</Subscript>Te<Subscript><Emphasis Type="Italic">x</Emphasis></Subscript>

n-Type CoSb_2.875−x Ge_0.125Te _x (x = 0.125 to 0.275) compounds with different Te contents have been synthesized by a melt–quench–anneal–spark plasma sintering method, and the effects of Te content on the structure and thermoelectric properties have been investigated. The results show that all specimens exhibited n-type conduction characteristics. The solubility limit of Te in CoSb_2.875−x Ge_0.125Te _x is found to be x = 0.25. The solubility of Te in CoSb₃ is increased through charge compensation of the element Ge. The room-temperature carrier concentration N _p of CoSb_2.875−x Ge_0.125Te _x skutterudites increases with increasing Te content, and the compounds possess high power factors. The maximum power factor of 3.89 × 10⁻³ W m⁻¹ K⁻² was obtained at 720 K for the CoSb_2.625Ge_0.125Te_0.25 compound. The thermal conductivity decreases dramatically with increasing Te content due to strong point defect scattering. The maximum value of the thermoelectric figure of merit ZT = 1.03 was obtained at 800 K for CoSb_2.625Ge_0.125Te_0.25, benefiting from a lower thermal conductivity and a higher power factor. The figure of merit is competitive with values reported for single-filled skutterudites.     

The Amplitude of Longitudinal Characteristic Modes in Dielectric Waveguide Array

It's not adequate to just obtain eigenvalue for solving eigenvalue problem. Since the eigenvalues associated with longitudinal characteristic modes in dielectric waveguide array (DWA) has been studied, the paper concentrates on the corresponding eigenvector, namely, the amplitude of these characteristic modes. Through numerical study of the amplitude of longitudinal guided TE and TM modes in DWA, space harmonic (SH) coupling and energy conversion effect have been discovered. The paper not only contribute to deep understand the mechanism of SH interaction, but also do good to analyze the resonance, radiation problem in DWA.     

全数字接收机中定时恢复的研究

定时恢复是全数字接收机中的核心技术之一,文章在传统的Gardner定时恢复理论基础上研究了一种改进的定时恢复方法.提出了一种改进的插值结构,并对控制器进行了改进.以四相移相键控(QPSK)信号为例进行了仿真验证,仿真结果表明上述方法可以很好地解决定时恢复问题.并可降低系统的实现成本.     

Optical and electrical characteristics of GaN vertical light emitting diode with current block layer

A GaN vertical light emitting diode(LED)with a current block layer(CBL)was investigated.Vertical LEDs without a CBL,with a non-ohmic contact CBL and with a silicon dioxide CBL were fabricated.Optical and electrical tests were carried out.The results show that the light output power of vertical LEDs with a non-ohmic contact CBL and with a silicon dioxide CBL are 40.6%and 60.7%higher than that of vertical LEDs without a CBL at 350 mA,respectively.The efficiencies of vertical LEDs without a CBL,with a non-ohmic contact CBL and with a silicon dioxide CBL drop to 72%,78%and 85.5%of their maximum efficiency at 350 mA,respectively. Moreover,vertical LEDs with a non-ohmic contact CBL have relatively superior anti-electrostatic ability.     

浅谈变频器散热技术的发展现状

随着变频器的越来越广泛的应用,变频器的散热技术的研究变得越来越重要。目前电力电子设备常用的散热技术有自然空气散热、强制风冷、水冷和热管等,本文阐述了这几种散热技术的工作原理及其特点。     

Non-interlayer and color stable WOLEDs with mixed host and incorporating a new orange phosphorescent iridium complex

In this work, we have synthesized a new phosphorescent iridium complex (Bppya)₂Ir(acac), as an orange dopant for organic light-emitting diodes (OLEDs). The device achieved an external quantum efficiency (EQE) of 22.4%, a current efficiency of 49.5 cd A⁻¹ and a power efficiency of 38.9 lm W⁻¹, which are among the highest values for orange OLEDs. Furthermore, color stable and high efficiency phosphorescent white OLED (WOLED) was demonstrated by utilizing a mixed-host in the emissive layers (EMLs) composed of a blue phosphor and the new orange phosphorescent emitter, as well as by avoiding the use of interlayers that commonly exist between different EMLs in WOLEDs. Our WOLED presented decent white emission with maximum efficiencies of 25.3 cd A⁻¹ and 12.6%. Furthermore, the 1931 Commission Internationale de l’Eclairage color coordinates exhibited extremely small variation of (0.3940 ± 0.0102, 0.4323 ± 0.0046) in a wide luminance range from 49 to 38,035 cd m⁻² when driving voltages increased from 4 V to 12 V. The root cause for this excellent color stability is the utilization of the mixed-host to obtain bipolar transport properties in EMLs as well as the eliminating of interlayer between different EMLs, which, on one hand, effectively broaden the exciton recombination zone; on the other hand, reduce the accumulation of triplet excitons at the emissive interface.     

Modulations in line shapes of magnetoconductance curves for diodes of pentacene:fullerene charge transfer complexes

This work investigates that the applied electric field modulates the line shapes of magnetoconductance (MC) responses in pentacene:fullerene diodes under illumination. We attribute the line shape of MC curves herein is correlated with the strength of the exchange interaction in pentacene:fullerene charge transfer (CT) complex states. Applying the reversed bias increases the built-in electric field (E_built-in) of the diodes to offset the exchange interaction of CT complex states and narrows the line shapes of MC responses. The saturation field of MC curves in the pentacene:fullerene bulk heterojunction device is 752 Oe when the device is biased at 0.4 V and decreases to 212 Oe at a reversed bias of −1.0 V. The line shape of MC curves for the diode made of pristine pentacene or fullerene as the active layer does not change with the applied bias voltage. Our results indicate the correlations of MC responses with the exchange interaction of CT complexes as modulated by the applied electric field.     

Phototunable Underwater Oil Adhesion of Micro/Nanoscale Hierarchical‐Structured ZnO Mesh Films with Switchable Contact Mode

Controllable surface adhesion of solid substrates has aroused great interest both in air and underwater in solving many challenging interfacial science problems such as robust antifouling, oil‐repellent, and highly efficient oil/water separation materials. Recently, responsive surface adhesion, especially switchable adhesion, under external stimulus in air has been paid more and more attention in fundamental research and industrial applications. However, phototunable underwater oil adhesion is still a challenge. Here, an approach to realize phototunable underwater oil adhesion on aligned ZnO nanorod array‐coated films is reported, via a special switchable contact mode between an unstable liquid/gas/solid tri‐phase contact mode and stable liquid/liquid/solid tri‐phase contact mode. The photo‐induced wettability transition to water and air exists (or does not) in the micro/nanoscale hierarchical structure of the mesh films, playing important role in controlling the underwater oil adhesion behavior. This work is promising in the design of novel interfacial materials and functional devices for practical applications such as photo‐induced underwater oil manipulation and release, with loss‐free oil droplet transportation.