不同注F剂量与CMOS运放电路辐照损伤的相关性

在不同注F剂量条件下,对P沟和N沟两种不同差分对输入CMOS运放电路的电离辐照响应进行了研究.分析比较了注F和未注F运放电路电离辐照响应之间的差异.结果表明,在栅场介质注入适量的F,可有效抑制辐照感生的氧化物电荷尤其是界面态的增长,从而提高CMOS运放电路的抗辐照特性.     

Al2O3高k栅介质的可靠性

利用反应溅射方法制备了等效氧化层厚度为3．45nm的Al2O3栅介质MOS电容，研究了Al2O3作为栅介质的瞬时击穿和恒压应力下的时变击穿等可靠性特征．击穿实验显示，样品的Al2O3栅介质的等效击穿场强大小为12.8MV／cm.在时变击穿的实验中，Al2O3栅介质表现出类似于SiO2的软击穿现象．不同栅压应力作用的测试结果表明，介质中注入电荷的积累效应是引起软击穿的主要因素，其对应的介质击穿电荷QBD约为30～60C／cm^2．     

A 1-Mbit MRAM based on 1T1MTJ bit cell integrated with copper interconnects

A low-power 1-Mb magnetoresistive random access memory (MRAM) based on a one-transistor and one-magnetic tunnel junction (1T1MTJ) bit cell is demonstrated. This is the largest MRAM memory demonstration to date. In this circuit, the magnetic tunnel junction (MTJ) elements are integrated with CMOS using copper interconnect technology. The copper interconnects are cladded with a high-permeability layer which is used to focus magnetic flux generated by current flowing through the lines toward the MTJ devices and reduce the power needed for programming. The 25-mm/sup 2/ 1-Mb MRAM circuit operates with address access times of less than 50 ns, consuming 24 mW at 3.0 V and 20 MHz. The 1-Mb MRAM circuit is fabricated in a 0.6-/spl mu/m CMOS process utilizing five layers of metal and two layers of poly.     

Fabrication and characteristics of high-speed implant-confined index-guided lateral-current 850-nm vertical cavity surface-emitting lasers

Process technology of high-speed implant-apertured index-guide lateral-current-injection top dielectric-mirror quantum-well 850-nm vertical cavity surface-emitting lasers (VCSELs) has been developed. Oxygen and helium implantation for aperture definition and extrinsic capacitance reduction, dielectric mirror formation, p- and n-ohmic contact formation, VCSEL resistance, and thermal analysis were investigated. Employing this technology, GaAs/AlGaAs-based 850-nm VCSELs with small signal modulation bandwidths up to 11.5 Gb/s and an eye diagram generated at 12 Gb/s by a pseudorandom bit sequence of 2/sup 31/-1 were achieved. The bit-error rates were below 10/sup -13/. The threshold current is as low as 0.8 mA for 7-/spl mu/m-diameter current apertures and typical slope efficiencies of 0.45-0.5 mA/mW were obtained.     

基于平均模板的HRRP自动目标识别

给出了一种结合幂变换的高分辨率距离像（High Resolution Range Profile,简称HRRP）的预处理新方法，根据时域－频域能量等价性，利用功率平均形成一种频域平均模板。基于美国MSTAR（Moving and Stationary Target Acquisition and Recognition)实测数据的实验结果证明了新方法的有效性。     

IP 地址的现状与发展

随着Internet用户和可上网的终端数量的激增 ,IP地址空间日趋枯竭 ,IP地址的扩充需求也愈加迫切。新一代寻址方案IPv6将成为未来因特网的主流协议。     

TEMIC射频卡的速率自适应读卡算法

提出种基于TEMIC射频卡Manchester编码的速率自适应读卡算法,并对该算法进行了说明和示例。     

大气的布里渊散射特性研究

建立了大气布里渊散射光频移的数学模型,分析计算了温度、水汽压、大气压力等大气参量对布里渊散射特性的影响。结果表明,布里渊散射光频移受大气压、水汽压的影响很小,而受大气温度的影响很大。这些结果对大气中隐形目标的探测技术具有重要的参考意义。     

小型TEA CO2激光器的快速调谐技术研究

报道了两种快速调谐技术的研究-6面转镜+固定光栅法和高频步进电机驱动光栅法.实验表明,高频步进电机法优于转镜法.实验得到激光器的一级调谐输出谱线50余条,激光输出能量(30～100)mJ.在单台CO2激光器上实现快速调谐输出波长不同的激光脉冲,其时间间隔达到≤10ms.     

佳木斯有线电视网络的建设重点

通过对佳木斯有线网络的分析，意识到佳木斯有线网络面临的机遇和存在的问题，分析了网络的现状，并根据当地的生活水平提出了目前应采取的解决方案。