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61.
Oka T. Hirata K. Suzuki H. Ouchi K. Uchiyama H. Taniguchi T. Mochizuki K. Nakamura T. 《Electron Devices, IEEE Transactions on》2001,48(11):2625-2630
We have developed the advanced performance, small-scale InGaP/GaAs heterojunction bipolar transistors (HBTs) by using WSi/Ti base electrode and buried SiO2 in the extrinsic collector. The base-collector capacitance CBC was further reduced to improve high-frequency performance. Improving the uniformity of the buried SiO 2, reducing the area of the base electrode, and optimizing the width of the base-contact enabled us to reduce the parasitic capacitance in the buried SiO2 region by 50% compared to our previous devices. The cutoff frequency fT of 156 GHz and the maximum oscillation frequency fmax of 255 GHz were obtained at a collector current IC of 3.5 mA for the HBT with an emitter size SE of 0.5×4.5 μm2, and fT of 114 GHz and fmax of 230 GHz were obtained at IC of 0.9 mA for the HBT with SE of 0.25×1.5 μm2. We have also fabricated digital and analog circuits using these HBTs. A 1/8 static frequency divider operated at a maximum toggle frequency of 39.5 GHz with a power consumption per flip-flop of 190 mW. A transimpedance amplifier provides a gain of 46.5 dB·Ω with a bandwidth of 41.6 GHz at a power consumption of 150 mW. These results indicate the great potential of our HBTs for high-speed, low-power circuit applications 相似文献
62.
N. Oyama Y. TakanashiS. Kaneko K. MomiyamaK. Suzuki F. Hirose 《Microelectronic Engineering》2011,88(9):2959-2963
The forward and reverse current density-voltage (J-V) and capacitance-voltage (C-V) characteristics of pentacene/n−-silicon heterojunction diodes were investigated to clarify the carrier conduction mechanism at the organic/inorganic heterojunction. Current rectification characteristics of the pentacene/n−-Si junctions can be explained by a Schottky diode model with an interfacial layer. The diode parameters such as Schottky barrier height and ideality factor were estimated to be 0.79-1.0 eV and 2.4-2.7, respectively. The C-V analysis suggests that the depletion layer appears selectively in the n−-Si layer with a thickness of 1.47 μm from the junction with zero bias and the diffusion potential was estimated at 0.30 eV at the open-circuit condition. The present heterojunction allows the photovoltaic operation with power conversion efficiencies up to 0.044% with a simulated solar light exposure of 100 mW/cm2. 相似文献
63.
The lipid droplet (LD), an organelle that exists ubiquitously in various organisms, from bacteria to mammals, has attracted much attention from both medical and cell biology fields. The LD in white adipocytes is often treated as the prototype LD, but is rather a special example, considering that its size, intracellular localization and molecular composition are vastly different from those of non-adipocyte LDs. These differences confer distinct properties on adipocyte and non-adipocyte LDs. In this article, we address the current understanding of LDs by discussing the differences between adipocyte and non-adipocyte LDs. 相似文献
64.
65.
Defects introduced into SrTiO3 by auto-feeding epitaxy studied using positron annihilation technique
A. Uedono M. Kiyohara K. Shimoyama K. Yamabe T. Ohdaira R. Suzuki T. Mikado 《Materials Science in Semiconductor Processing》2003,6(5-6):367-369
Vacancy-type defects in SrTiO3 were studied by means of positron annihilation. Thin CeO2 films were grown on SrTiO3 substrates by molecular-beam epitaxy without using an oxidant; oxygen was supplied by diffusion from the substrate. This process is referred as “auto-feeding epitaxy” (AFE). The species of defects introduced into the substrate was found to be not only oxygen vacancies but also Sr-vacancies or their complexes. CeO2 films were grown also on MgO, yttria-stabilized zirconia and sapphire substrates using AFE, and these substrates were characterized by positron annihilation. 相似文献
66.
Tanaka K. Suzuki R. Emaru T. Higashi Y. Wang H.O. 《Mechatronics, IEEE/ASME Transactions on》2007,12(5):565-570
This paper presents an experimental study on the development of a cyclogyro-based flying robot with a new variable angle of attack mechanism. A cyclogyro is a flying machine supported in the air by power-driven rotors that rotate about a horizontal axis, like the paddle-wheels of a steamboat. Machines of this type have been designed by some companies but there has been no record of any successful flights. Our design starts with a new variable angle of attack mechanism with an eccentric (rotational) point in addition to a rotational point connecting to a motor. The main feature of the mechanism with the eccentric rotational point is the ability to change attack of angles in accordance with the wing positions (as determined by the rotational angles of the cyclogyro) without actuators. The design parameters (wing span, the number of wings, and eccentric distance) of the flying robot are determined through a series of experiments. Experimental results show that the cyclogyro-based flying robot with the new variable angle of attack mechanism is capable of generating sufficient lift force for flying. 相似文献
67.
Suzuki H. Nagasawa S. Miyahara K. Enomoto Y. 《Applied Superconductivity, IEEE Transactions on》2000,10(3):1637-1641
We report simulated results of-rapid single flux quantum (SFQ) circuits having driver, receiver, and passive transmission lines for propagating SFQ pulses to investigate the design criteria. We have studied the equivalent input/output resistance of the driver/receiver in various bias conditions and found that the resistance is almost proportional to the bias current of the driver/receiver. Furthermore, we have proposed inserting a series resistor at the end of the superconducting passive transmission line (PTL) for avoiding undesirable flux trapping in the loop and for isolation in regard to the DC current. We also found that the reduction of the bias margin due to the resistance is rather small when the resistance is much smaller than the impedance of the PTL. An operating margin of more than 30% was obtained in the driver/receiver circuits including the PTL and the series resistor 相似文献
68.
Pelusi M.D. Wang X. Futami F. Kikuchi K. Suzuki A. 《Photonics Technology Letters, IEEE》2000,12(7):795-797
Record distance transmission of 250-fs pulses over 139-km optical fiber at 6-GHz repetition is realized by compensating chromatic dispersion up to fourth-order using a novel approach. The link is designed combining 108.5-km standard single-mode fiber (SMF), 17.5-km dispersion-shifted fiber, and 13-km negative-slope dispersion-compensating fiber to achieve both zero total chromatic dispersion and slope at the 1.55-μm carrier. Fourth-order pulse dispersion caused by the fiber dispersion curvature around 1.55 μm is then suppressed by adding the quadratic phase of opposite sign from excess SMF to produce 503-fs output. However, both higher quality and shorter 390-fs output is achieved after applying 6-GHz electrooptic phase modulation (3.5 π O-peak) to prestretched pulses and adding a further 50-m SMF to the link 相似文献
69.
Umeda T. Yoshida H. Sekine S. Fujita Y. Suzuki T. Otaka S. 《Solid-State Circuits, IEEE Journal of》2006,41(1):35-41
This paper presents a 950-MHz wireless power transmission system and a high-sensitivity rectifier circuit for ubiquitous sensor network tags. The wireless power transmission offers a battery-life-free sensor tag by recharging the output power of a base station into a secondary battery implemented with the tag. For realizing the system, a high-sensitivity rectifier with dynamic gate-drain biasing has been developed in a 0.3-/spl mu/m CMOS process. The measurement results show that the proposed rectifier can recharge a 1.2-V secondary battery over -14-dBm input RF power at a power conversion efficiency of 1.2%. In the proposed wireless system, this sensitivity corresponds to 10-m distance communication at 4-W output power from a base station. 相似文献
70.
Xia W Aizawa S Tanigaki T Suzuki T Yoshizawa Y Shindo D Tonomura A 《Journal of electron microscopy》2012,61(2):71-76
The three-dimensional spin structure of the magnetic vortex of FeSiB, an amorphous soft magnetic material, was investigated by holography observation and computer simulation. Magnetization distribution in the neighborhood of the vortex center was estimated from the phase distribution obtained by holography observation. To confirm this magnetization distribution, sample-tilting experiments were performed: when the sample was tilted with respect to the electron beam direction, the phase-image center was found to shift along the tilting axis. Finite-element computer simulation was carried out to estimate the amount of shifts of the phase-image center in the sample tilting from the experimental magnetization distributions in the no sample-tilting conditions. We found that the simulated shifts of the phase-image center were in good agreement with those in the sample-tilting experiment, thus confirming the magnetization distribution near the vortex center obtained by holography observation. 相似文献