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排序方式: 共有581条查询结果,搜索用时 24 毫秒
561.
Daniel Donoval Andrej Vrbicky Juraj Marek Ales Chvala Peter Beno 《Solid-state electronics》2008,52(6):892-898
High-voltage power MOSFETs have been widely used in switching mode power supply circuits as output drivers for industrial and automotive electronic control systems. However, as the device size is reduced, the energy handling capability is becoming a very important issue to be addressed together with the trade-off between the series on-resistance RON and breakdown voltage VBR. Unclamped inductive switching (UIS) condition represents the circuit switching operation for evaluating the “ruggedness”, which characterizes the device capability to handle high avalanche currents during the applied stress. In this paper we present an experimental method which modifies the standard UIS test and allows extraction of the maximum device temperature after the applied standard stress pulse vanishes. Corresponding analysis and non-destructive prediction of the ruggedness of power DMOSFETs devices supported by advanced 2-D mixed mode electro-thermal device and circuit simulation under UIS conditions using calibrated physical models is provided also. The results of numerical simulation are in a very good correlation with experimental characteristics and contribute to their physical interpretation by identification of the mechanism of heat generation and heat source location and continuous temperature extraction. 相似文献
562.
Csar Omar Ramírez Quiroz George D. Spyropoulos Michael Salvador Loïc M. Roch Marvin Berlinghof Jos Darío Perea Karen Forberich Laura‐Isabelle Dion‐Bertrand Nadine J. Schrenker Andrej Classen Nicola Gasparini Ganna Chistiakova Mathias Mews Lars Korte Bernd Rech Ning Li Frank Hauke Erdmann Spiecker Tayebeh Ameri Steve Albrecht Gonzalo Abelln Salvador Len Tobias Unruh Andreas Hirsch Aln Aspuru‐Guzik Christoph J. Brabec 《Advanced functional materials》2019,29(40)
A multipurpose interconnection layer based on poly(3,4‐ethylenedioxythiophene) doped with poly(styrene sulfonate) (PEDOT:PSS), and d ‐sorbitol for monolithic perovskite/silicon tandem solar cells is introduced. The interconnection of independently processed silicon and perovskite subcells is a simple add‐on lamination step, alleviating common fabrication complexities of tandem devices. It is demonstrated experimentally and theoretically that PEDOT:PSS is an ideal building block for manipulating the mechanical and electrical functionality of the charge recombination layer by controlling the microstructure on the nano‐ and mesoscale. It is elucidated that the optimal functionality of the recombination layer relies on a gradient in the d ‐sorbitol dopant distribution that modulates the orientation of PEDOT across the PEDOT:PSS film. Using this modified PEDOT:PSS composite, a monolithic two‐terminal perovskite/silicon tandem solar cell with a steady‐state efficiency of 21.0%, a fill factor of 80.4%, and negligible open circuit voltage losses compared to single‐junction devices is shown. The versatility of this approach is further validated by presenting a laminated two‐terminal monolithic perovskite/organic tandem solar cell with 11.7% power conversion efficiency. It is envisioned that this lamination concept can be applied for the pairing of multiple photovoltaic and other thin film technologies, creating a universal platform that facilitates mass production of tandem devices with high efficiency. 相似文献
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Dipl.-Ing. Dr. Josef L. Zeman 《Acta Mechanica》1965,1(2):194-211
Zusammenfassung Das Problem der Ermittlung der korrelationstheoretischen Eigenschaften des Temperatur- und des Spannungsfeldes im Innern eines Körpers, dem eine zufallsabhängige Wärmemenge zugeführt wird, wird unter gewissen Voraussetzungen auf das der Bestimmung von (deterministischen) Einflußfunktionen zurückgeführt. Die Ergebnisse werden an Hand von Beispielen diskutiert.
Mit 10 Textabbildungen
Die vorliegende Arbeit wurde in dankenswerter Weise von der Regierung der USA unter Contract 61(052)–645 unterstützt. 相似文献
Summary The problem of determining-in the sense of correlation theory-the properties of temperature and stress in the interior of a body to which a random quantity of heat is supplied is, under certain assumptions, reduced to the problem of finding deterministic influence functions. The results are illustrated by examples.
Mit 10 Textabbildungen
Die vorliegende Arbeit wurde in dankenswerter Weise von der Regierung der USA unter Contract 61(052)–645 unterstützt. 相似文献
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SR George SP Lee G Varghese PR Zeman P Seeman GY Ng BF O'Dowd 《Canadian Metallurgical Quarterly》1998,273(46):30244-30248
In this study, we show that a peptide based on the sequence of transmembrane domain 6 of the D1 dopamine receptor (D1DR) specifically inhibited D1DR binding and function, without affecting receptor oligomerization. It has been shown that an analogous peptide from the beta2-adrenergic receptor disrupted dimerization and adenylyl cyclase activation in the beta2-adrenergic receptor (Hebert, T. E., Moffett, S., Morello, J. P., Loisel, T. P., Bichet, D. G., Barret, C., and Bouvier, M. (1996) J. Biol. Chem. 271, 16384-16392). Treatment of D1DR with the D1DR transmembrane 6 peptide resulted in a dose-dependent, irreversible inhibition of D1DR antagonist binding, an effect not seen in D1DR with peptides based on transmembrane domains of other G protein-coupled receptors. Incubation with the D1DR transmembrane 6 peptide also resulted in a dose-dependent attenuation of both dopamine-induced [35S]guanosine 5'-3-O-(thio)triphosphate (GTPgammaS) binding and receptor-mediated dopamine stimulation of adenylyl cyclase activity. Notably, GTPgammaS binding and cAMP production were reduced to levels below baseline, indicating blockade of ligand-independent, intrinsic receptor activity. Immunoblot analyses of the D1DR revealed the receptor existed as monomers, dimers, and higher order oligomers and that these oligomeric states were unaffected after incubation with the D1DR transmembrane 6 peptide. These findings represent the first demonstration that a peptide based on the transmembrane 6 of the D1DR may represent a novel category of noncompetitive D1DR antagonists. 相似文献
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Guangtao Yang Ren A. C. M. M. van Swaaij Olindo Isabella Miro Zeman 《Progress in Photovoltaics: Research and Applications》2015,23(10):1283-1290
In this paper, we present a novel way of texturing glass facilitated by ZnO:Al thin film as sacrificial layer for thin film silicon solar cell application. We name this technique zinc oxide‐induced texturing (ZIT). The texturing of glass was achieved by wet etching of ZnO:Al covered glass with HF and HNO3 as etchants. We investigated the influence of the ZnO:Al layer sputtering condition, the layer thickness, and the etchant composition on the surface morphology of the textured glass. We demonstrate that we are able to control the roughness of the ZIT glass over a wide roughness range, ranging from 20 to 400 nm. Highly efficient microcrystalline silicon n‐i‐p solar cells were deposited on ZIT glass. The influence of the substrate morphology on the solar cell performance is also discussed. The highest efficiency for a single junction n‐i‐p microcrystalline silicon solar cell obtained in this work is 10.64% (Active area). Copyright © 2014 John Wiley & Sons, Ltd. 相似文献