高质量的一级光栅1．55μmDFB激光器

本文详细叙述了ＤＦＢ激光器的设计要点和新的工艺。采用一级全息光栅和二步液相外延法批量研制出高稳定单纵模工作的１．５５μｍ分布反馈激光器（ＤＦＢ—ＬＤ）。外延片成品率＞４０％。器件特性：２５℃时阈值电流２０ｍＡ，单面光功率＞１０ｍｗ，主边模抑制比ＳＭＳＲ达４３ｄＢ（λ／４相移光栅），谱线宽度△ν－２０ｄＢ＝０．３ｎｍ，调制速率＞１．８ＧＨｚ。可靠性测试显示：高温监测光谱稳定，２５°Ｃ时阈值退化率△Ｉｔｈ／ｔ＜０．３ｍＡ／ｋｈ，对应器件预估寿命将超过１０万ｈ。     

Enhancement of oxide break-up by implantation of fluorine inpoly-Si emitter contacted p+-n shallow junctionformation

In this study, it is demonstrated that the incorporation of fluorine can enhance poly-Si/Si interfacial oxide break-up in the poly-Si emitter contacted p⁺-n shallow junction formation. The annealing temperature for breaking up the poly-Si/Si interfacial oxide has been found to be as low as 900°C. As a result, the junction depth of the BF₂-implanted device is much larger than that of the boron-implanted device     

聚丙烯酸酯类纺织染整助剂及其应用

简述了国内外聚丙烯酸酯类纺织染整助剂的生产和应用概况,评述了其合成方法及其在纺织染整工业中的应用,并提出了发展我国聚丙烯酸酯类纺织染整助剂的建议。     

Effects of hot carrier induced interface state generation insubmicron LDD MOSFET's

A two-dimensional numerical simulation including a new interface state generation model has been developed to study the performance variation of a LDD MOSFET after a dc voltage stress. The spatial distribution of hot carrier induced interface states is calculated with a breaking silicon-hydrogen bond model. Mobility degradation and reduction of conduction charge due to interface traps are considered. A 0.6 μm LDD MOSFET was fabricated. The drain current degradation and the substrate current variation after a stress were characterized to compare the simulation. A reduction of the substrate current at V_g ≃0.5 V_d in a stressed device was observed from both the measurement and the simulation. Our study reveals that the reduction is attributed to a distance between a maximum channel electric field and generated interface states     

Measurement and modeling of self-heating in SOI nMOSFET's

Self-heating in SOI nMOSFET's is measured and modeled. Temperature rises in excess of 100 K are observed for SOI devices under static operating conditions. The measured temperature rise agrees well with the predictions of an analytical model and is a function of the silicon thickness, buried oxide thickness, and channel-metal contact separation. Under dynamic circuit conditions, the channel temperatures are much lower than predicted from the static power dissipation. This work provides the foundation for the extraction of device modeling parameters for dynamic operation (at constant temperature) from static device characterization data (where temperature varies widely). Self-heating does not greatly reduce the electromigration reliability of SOI circuits, but might influence SOI device design, e.g., requiring a thinner buried oxide layer for particular applications and scaled geometries     

Pd-Ge contact to n-GaAs with the TiW diffusion barrier

Pd-Ge based ohmic contact to n-GaAs with a TiW diffusion barrier was investigated. Electrical analysis as well as Auger electron spectroscopy and the scanning electron microscopy were used to study the contact after it was subjected to different furnace and rapid thermal annealing and different aging steps. All analyses show that TiW can act as a good barrier metal for the Au/Ge/Pd/n-GaAs contact system. A value of 1.45 × 10⁻⁶ Ω-cm² for the specific contact resistance was obtained for the Au/TiW/Ge/Pd/n-GaAs contact after it was rapid thermally annealed at 425°C for 90 s. It can withstand a thermal aging at 350°C for 40 h with its ρ_c increasing to 2.94 × 10⁻⁶Ω-cm² and for an aging at 410°C for 40 h with its ρ_c increasing to 1.38 × 10⁻⁵ Ω-cm².     

On the monotonicity of (LDL) logic programs with set

LDL is one of the recently proposed logical query languages, which incorporate set, for data and knowledge base systems. Since LDL programs can simulate negation, they are not monotonic in general. On the other hand, there are monotonic LDL programs. This paper addresses the natural question of “When are the generally nonmonotonic LDL programs monotonic?” and investigates related topics such as useful applications for monotonicity. We discuss four kinds of monotonicity, and examine two of them in depth. The first of the two, called “ω-monotonicity”, is shown to be undecidable even when limited to single-stratum programs. The second, called “uniform monotonicity”, is shown to implyω-monotonicity. We characterize the uniform monotonicity of a program (i) by a relationship between its Bancilhon-Khoshafian semantics and its LDL semantics, and (ii) with a useful property called subset completion independence. Characterization (ii) implies that uniformly monotonie programs can be evaluated more efficiently by discarding dominated facts. Finally, we provide some necessary and/or sufficient, syntactic conditions for uniform monotonicity. The conditions pinpoint (a) enumerated set terms, (b) negations of membership and inclusion, and (c) sharing of set terms as the main source for nonuniform monotonicity.     

准噶尔盆地加快天然气勘探有利条件及预探领域分析

准噶尔盆地天然气资源十分丰富,勘探潜力巨大。该盆地具备形成大气区的地质背景,发育石炭系、二叠系、侏罗系三套气源岩,演化程度高,气源条件充足;发育多类型、多套储集体和四套区域盖层,形成了有利的储盖组合及成藏配置。通过对五彩湾、滴西、莫索湾、莫北地区典型气藏的分析研究,该盆地发育多种气藏类型,包括构造型、古潜山型、火山岩内幕型及地层(不整合遮挡)型。通过研究指出,天然气勘探的现实领域有陆东—五彩湾地区、陆西—莫北—莫索湾地区;待突破的领域有腹部下组合大型古隆起及岩性气藏、南缘冲断带;正在准备的勘探领域主要为煤层气。     

A force modulation study on crystallization process in ferroelectric vinylidene fluoride and trifluoroethylene copolymer films

This paper introduces the Force Modulation technique to the study of crystallization process in ferroelectric vinylidene fluoride and trifluoroethylene copolymer films. Using this technique we have successfully visualized ferroelectric crystalline domains and observed that these ferroelectric domains grow out from amorphous phase, unite into strip-like structures, and finally congregate into a union. Force Modulation can weaken the influence of topography on imaging of ferroelectric domains, and reveal more details, which are difficult to be observed in topographical image.