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101.
The negative capacitance (NC) effect, recently discovered in a fluorite-based ferroelectric thin film, has attracted great attention as a rescue to overcome the scaling limitations of the conventional memory and logic devices of highly integrated circuits. The NC effect manifesting an S-shaped polarization–voltage (P–V) curve is initially interpreted by a 1-dimensional Landau Ginzburg Devonshire (LGD) model. However, a series of recent studies have found that this effect can also be explained by the inhomogeneous stray field energy (ISE) model. In this study, by extending the ISE model in the ferroelectric (FE)-dielectric (DE) layered structure, an analytical model that considers the influence of the interfacial screening charge distribution is presented. This model showed that the NC effect in the FE-DE heterostructure can be manifested in various forms other than a single S-shaped P–V curve. In particular, a double S-shaped P–V curve is expected from the fully compensated anti-parallel domain structure, confirmed experimentally in the actual Al2O3/(Hf0.5Zr0.5)O2/Al2O3 triple-layer structure. Furthermore, to reveal the origin of the double S-shaped P–V curve, a multidomain LGD model is presented. It is confirmed that this phenomenon is attributed to the evolution of inhomogeneous stray field energy.  相似文献   
102.
This paper presents novel topologies implementation for Switched Reluctance Motor (SRM) drive used in commercial applications. For effective utilization of the developed system, a novel direct current controlled PWM scheme is designed and implemented to produce the desired dynamic speed characteristic. In comparison to conventional asymmetric converter topology, it can minimize entire system costs by reducing numbers of power semiconductors. Therefore, it may open up investigation of a new way for SRM to compete with other ac motors such as induction motors, brushless dc motors, etc. The validity of the proposed method is verified through theoretical explanation and experimental results.  相似文献   
103.
This paper presents a high-speed and high-efficiency capsule endoscopy system. Both a transmitter and a receiver were optimized for its application through an analysis of the human body channel. ON-OFF keying modulation is utilized to achieve low power consumption of the in-body transmitter. A low drop output regulator is adopted to prevent performance degradation in the event of a voltage drop in the battery. The receiver adopts superheterodyne structure to obtain high sensitivity, considering the link budget from the previous analysis. The receiver and transmitter were fabricated using the CMOS 0.13-μm process. The output power of the transmitter is -1.6 dB·m and its efficiency is 27.7%. The minimum sensitivity of the receiver is -80 dB·m at a bit error ratio (BER) of 3 × 10 (-6). An outer wall loop antenna is adopted for the capsule system to ensure a small size. The integrated system is evaluated using a liquid human phantom and a living pig, resulting in clean captured images.  相似文献   
104.
The control of unexpectedly rapid Li intercalation reactions without structural instability in olivine‐type LiFePO4 nanocrystals is one of the notable scientific advances and new findings attained in materials physics and chemistry during the past decade. A variety of scientific studies and technological investigations have been carried out with LiFePO4 to elucidate the origins of many peculiar physical aspects as well as to develop more effective synthetic processing techniques for better electrochemical performances. Among the several features of LiFePO4 that have attracted much interest, in this article we address four important issues—regarding doping of aliovalent cations, distribution of Fe‐rich secondary metallic phases, nanoparticle formation during crystallization, and antisite Li/Fe partitioning—by means of straightforward atomic‐scale imaging and chemical probing. The direct observations in the present study provide significant insight into alternative efficient approaches to obtain conductive LiFePO4 nanocrystals with controlled defect structures.  相似文献   
105.
Wireless Personal Communications - Through the use of UAV, the functional lifetime of WSN can be elongated in exchange for higher data delivery latency as the UAV replaces the multi-hop...  相似文献   
106.
It is demonstrated that electric transport in Bi‐deficient Bi1‐δFeO3 ferroelectric thin films, which act as a p‐type semiconductor, can be continuously and reversibly controlled by manipulating ferroelectric domains. Ferroelectric domain configuration is modified by applying a weak voltage stress to Pt/Bi1‐δFeO3/SrRuO3 thin‐film capacitors. This results in diode behavior in macroscopic charge‐transport properties as well as shrinkage of polarization‐voltage hysteresis loops. The forward current density depends on the voltage stress time controlling the domain configuration in the Bi1‐δFeO3 film. Piezoresponse force microscopy shows that the density of head‐to‐head/tail‐to‐tail unpenetrating local domains created by the voltage stress is directly related to the continuous modification of the charge transport and the diode effect. The control of charge transport is discussed in conjunction with polarization‐dependent interfacial barriers and charge trapping at the non‐neutral domain walls of unpenetrating tail‐to‐tail domains. Because domain walls in Bi1‐δFeO3 act as local conducting paths for charge transport, the domain‐wall‐mediated charge transport can be extended to ferroelectric resistive nonvolatile memories and nanochannel field‐effect transistors with high performances conceptually.  相似文献   
107.
Highly efficient bright green‐emitting Zn?Ag?In?S (ZAIS)/Zn?In?S (ZIS)/ZnS alloy core/inner‐shell/shell quantum dots (QDs) are synthesized using a multistep hot injection method with a highly concentrated zinc acetate dihydrate precursor. ZAIS/ZIS/ZnS QD growth is realized via five sequential steps: a core growth process, a two‐step alloying–shelling process, and a two‐step shelling process. To enhance the photoluminescence quantum yield (PLQY), a ZIS inner‐shell is synthesized and added with a band gap located between the ZAIS alloy‐core and ZnS shell using a strong exothermic reaction. The synthesized ZAIS/ZIS/ZnS QDs shows a high PLQY of 87% with peak wavelength of 501 nm. Tripackage white down‐converted light‐emitting diodes (DC‐LEDs) are realized using an InGaN blue (B) LED, a green (G) ZAIS/ZIS/ZS QD‐based DC‐LED, and a red (R) Zn?Cu?In?S/ZnS QD‐based DC‐LED with correlated color temperature from 2700 to 10 000 K. The red, green, and blue tripackage white DC‐LEDs exhibit high luminous efficacy of 72 lm W?1 and excellent color qualities (color rendering index (CRI, Ra) = 95 and the special CRI for red (R9) = 93) at 2700 K.  相似文献   
108.
The effect of Mn was investigated in a synthesized multilayer system made up of five layers of InMnGaAs/GaAs quantum well (QW) grown on semi-insulating (100)-oriented substrates prepared by low-temperature molecular beam epitaxy. Magnetic moment measurements on a superconducting quantum interference device magnetometer revealed the presence of ferromagnetism with a Curie temperature above room temperature in a five-layer InGaMnAs/GaAs QW structure in a GaAs matrix. X-ray diffraction and secondary ion mass spectroscopy measurements powerfully confirmed the second phase founding of ferromagnetic GaMn and MnAs clusters. The ferromagnetism existing in five layers of InMnGaAs/GaAs QW is not intrinsic, but extrinsic due to the presence of Mn dopant clusters such as GaMn and MnAs clusters.  相似文献   
109.
110.
We report, for the first time, the successful fabrication of aluminum-free metamorphic (MM) InP/In0.53 Ga0.47 As/InP double heterojunction bipolar transistors (DHBTs) on GaAs substrates with a linearly graded InxGa1-xP buffer grown by solid-source molecular beam epitaxy (SSMBE). Devices with 5×5 μm2 emitters display a peak current gain of 40 and a common-emitter breakdown voltage (BVCE0) higher than 9 V, a current gain cut-off frequency (fT) of 48 GHz and a maximum oscillation frequency (fmax) of 42 GHz. A minimum noise figure of 2.9 dB and associated gain of 19.5 dB were measured at a collector current level of 2.6 mA at 2 GHz. Detailed analysis suggests that the degradation of the base-emitter heterojunction interface and the increase of bulk recombination are the most probable causes for the poorer device performance of current metamorphic HBTs compared with lattice-matched HBTs  相似文献   
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