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91.
Experiments showing the frequency and amplitude of the flow induced motion of the gate for a 2- and a 4-in. swing check valve have been performed. The gate motion is due to turbulence in approach flow. We have found the dominant turbulent frequency of the approach flow is about half the natural frequency of the valves. The valves appear to be almost critically damped. Because of this, the valves respond almost as they would to a static force of the magnitude characteristic of the turbulent fluctuation in the flow. Both the dimensionless exciting force and the damping ratio have been found to be independent of valve size so the above statements are true for larger valves also. The recommended valve oscillation amplitudes and frequencies are used to calculate the wear at the shaft and at the stop. For an unpegged check valve, such as one of the 10-in. valves which was used at the San Onofre Nuclear Generation Station, it was found that shaft bearing wear would amount to 0.27 in.3/year and stop wear to 0.03 in.3/year.  相似文献   
92.
An all-optical multiplexing technique using wavelength division multiplexing (WDM)-time division multiplexing (TDM) conversion with an electroabsorption wavelength converter has been proposed and demonstrated. The effectiveness of this WDM-TDM conversion technique for various pulsewidth settings was experimentally investigated. The fluctuation of the signal performance, which was inevitably caused by the coherent crosstalk between adjacent pulses in the conventional optical time division multiplexing (OTDM) technique, were successfully suppressed, even in the case of wide pulse duration. High Q-factor performance has been maintained for a wide range of duty ration from 36% to 74%. By introducing this technique to the optical time division multiplexer, a highly stable and high-quality 40-Gb/s optical signal can be effectively produced without generating the short pulse or setting two tributaries at orthogonal polarization states, and without introducing high-speed electronics for signal multiplexing. The WDM-TDM conversion with an electroabsorption wavelength converter was extended to 60-Gb/s operation by using three 20-Gb/s tributaries. A clear eye opening was confirmed for a waveform after the WDM-TDM conversion of the 60-Gb/s signal  相似文献   
93.
Introduction   Owing to long-time running, more facilities including stations, pipelines, vessels have become corrosive and aged ,some process has grown old, it has exert more burden for the maintenance and repair.Simultaneously, the fluid production rate, oil production rate and water injection rate has changed greatly so that the inflicts and problems from the established surface systems will become more obvious. Energy cost of production and running has increasing continuously. Capacity has been unbalance in systems and areas.   ……  相似文献   
94.
G. C. Bakos   《Applied Energy》2002,72(3-4):609-619
This paper deals with the technical feasibility and economic viability of a grid connected wind-energy conversion system (WECS) used to cover the energy demand of an average habitable dwelling. The various parts of the wind-energy system are described and the useful electrical energy production is determined using a simulation program based on the Monte Carlo method. An economic analysis of the WEC system is performed using a computerized assessment tool. Important financial indices are calculated and financial scenarios investigated.  相似文献   
95.
A fast algorithm is proposed for estimating the auto- and cross-correlation functions of a large signal. The algorithm is based on the sectioning method by the fast Fourier transform. We determine the optimal length of the portion of data read from external memory into RAM which achieves Tmin—a minimum processing time. An estimate of Tmin is obtained.Translated from Kibernetika, No. 3, pp. 78–81, May–June, 1991.  相似文献   
96.
关于粒子加速器人身辐射安全联锁系统设计原则的建议   总被引:2,自引:2,他引:0  
李裕熊 《辐射防护》1989,9(1):23-26
本文讨论了在粒子加速器上的联锁系统设计中应遵循的一些原则,其中建立隔离区、“失效导致安全(Fail-safe)”,使用“硬件”、“多重联锁”、设置急停开关等是最重要的。  相似文献   
97.
98.
99.
Pre-metal-deposition reactive ion etching (RIE) was performed on an Al0.3Ga0.7N/AlN/GaN heterostructure in order to improve the metal-to-semiconductor contact resistance. An optimum AlGaN thickness for minimizing contact resistance was determined. An initial decrease in contact resistance with etching time was explained in terms of removal of an oxide surface layer and/or by an increase in tunnelling current with the decrease of the AlGaN thickness. The presence of a dissimilar surface layer was confirmed by an initial nonuniform etch depth rate. An increase in contact resistance for deeper etches was experienced. The increase was related to depletion of the two-dimensional (2-D) electron gas (2-DEG) under the ohmics. Etch depths were measured by atomic force microscopy (AFM). The contact resistance decreased from about 0.45 Ωmm for unetched ohmics to a minimum of 0.27 Ωmm for 70 Å etched ohmics. The initial thickness of the AlGaN layer was 250 Å. The decrease in contact resistance, without excessive complications on device processing, supports RIE etching as a viable solution to improve ohmic contact resistance in AlGaN/GaN HEMTs  相似文献   
100.
In this letter, a concise process technology is proposed for the first time to enable the fabrication of good quality three-dimensional (3-D) suspended radio frequency (RF) micro-inductors on bulk silicon, without utilizing the lithography process on sidewall and trench-bottom patterning. Samples were fabricated to demonstrate the applicability of the proposed process technology.  相似文献   
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