BID: a novel BH3 domain-only death agonist

The BCL-2 family of proteins consists of both antagonists (e.g., BCL-2) and agonists (e.g., BAX) that regulate apoptosis and compete through dimerization. The BH1 and BH2 domains of BCL-2 are required to heterodimerize with BAX and to repress cell death; conversely, the BH3 domain of BAX is required to heterodimerize with BCL-2 and to promote cell death. To extend this pathway, we used interactive cloning to identify Bid, which encodes a novel death agonist that heterodimerizes with either agonists (BAX) or antagonists (BCL-2). BID possesses only the BH3 domain, lacks a carboxy-terminal signal-anchor segment, and is found in both cytosolic and membrane locations. BID counters the protective effect of BCL-2. Moreover, expression of BID, without another death stimulus, induces ICE-like proteases and apoptosis. Mutagenesis revealed that an intact BH3 domain of BID was required to bind the BH1 domain of either BCL-2 or BAX. A BH3 mutant of BID that still heterodimerized with BCL-2 failed to promote apoptosis, dissociating these activities. In contrast, the only BID BH3 mutant that retained death promoting activity interacted with BAX, but not BCL-2. This BH3-only molecule supports BH3 as a death domain and favors a model in which BID represents a death ligand for the membrane-bound receptor BAX.     

对我国催化重整工艺专利市场的思考

根据我国专利法的原则，在对我国催化重整和芳烃生产专利检索过程和结果进行分析的基础上，阐述了对目前我国催化重整工艺专利市场的几点看法并提出对策。     

An extraction method to determine interconnect parasitic parameters

Interconnect parasitic parameters in integrated circuits have significant impact on circuit speed. An accurate monitoring of these parameters can help to improve interconnect performance during process development, provide information for circuit design, or give useful reference for circuit failure analysis. Existing extraction methods either are destructive (such as SEM measurement) or can determine only partial parasitic parameters (such as large capacitor measurement). In this paper, we present a new method for extracting interconnect parasitic parameters, which can simultaneously determine the interlayer and intralayer capacitances, line resistance, and effective line width. The method is based on two test patterns of the same structure with different dimensions. The structure consumes less wafer area than existing methods. The method shows good agreement with SEM measurement of dielectric thickness in both nonglobal planarized and chemical-mechanical polished processes, and gives accurate prediction of the process spread of a ring oscillator speed over a wafer     

Excavation of Inlet Tunnels at Geheyan Power Station

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基于动态时间规整的手势加速度信号识别

为了提高基于加速度传感器的动态手势识别算法的性能,本文采用了动态时间规整(DTW)识别算法。通过该算法计算测试模板和参考模板的相似度,从而得出识别结果。为了验证该方法,建立了一套手势加速度无线采集系统,并采集了41个志愿者的手势信息。实验结果表明,该方法手势平均识别率在97%以上。与HMM识别算法相比,DTW识别算法在识别的准确率上比HMM识别算法更具优势。