The Onsager relations analyzed using an ellipsoidal statistical equation

Validity on the well-known Onsager reciprocal relations L ₁₂=L ₂₁ is verified in the kinetic theory of gases taking into account mass and heat transfer near the surface. Using an analytical solution to the ellipsoidal statistical equation (providing for the true Prandtl number), it is demonstrated that the Onsager relations are obeyed, at least to within exponential corrections of the type exp(−1/Kn) in the Knudsen number.     

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In this paper, the authors present the results of experiments which clearly demonstrate a technical basis confirming that the carrier frequency harmonics data can be used for diagnostics relative to motor stator insulation degradation.     

Determination of dislocation densities in HCP metals from X-ray diffraction line-broadening analysis

X-Ray diffraction (XRD) line-broadening analysis has been performed on highly textured Zr-2.5Nb specimens which had been deformed in tensile tests to produce well-controlled dislocation structures. An iterative deconvolution method has been applied to extract the broadening function for the material, using as standards, a Zr single crystal and a 0 pct deformed specimen. In both cases, for specific tensile tests, a significant contribution to the basal line braodening was observed, which was clearly not directly related to the dislocation structure generated by the deformation, i.e., so-called c-component dislocations having a component of their Burgers vectors perpendicular to the basal plane. Calculations showed that the extent of basal line broadening cannot be attributed to the secondary effect of strain from a-type dislocations, i.e., dislocations with Burgers vectors parallel with the basal plane. It is concluded that most of the line broadening observed was the result of intergranular strain distributions. These distributions are most prominent for grains oriented with their c-axes perpendicular to the tensile-deformation axis and resulted in basal-plane line broadening even when there were few, if any, c-component dislocations present. This article is based on a presentation made in the symposium entitled “Defect Properties and Mechanical Behavior of HCP Metals and Alloys” at the TMS Annual Meeting, February 11–15, 2001, in New Orleans, Louisiana, under the auspices of the following ASM committees: Materials Science and Critical Technology Sector, Structural Materials Division, Electronic, Magnetic & Photonic Materials Division, Chemistry & Physics of Materials Committee, Joint Nuclear Materials Committee, and Titanium Committee.     

Indicators for inspection and maintenance planning of concrete structures

Based on an idea introduced by Benjamin and Cornell (1970. Probability, statistics and decision for civil engineers. New York: McGaw Hill) and previous works by the authors it is demonstrated how condition indicators may be formulated for the general purpose of quality control and for assessment and inspection planning in particular. The formulation facilitates quality control based on sampling of indirect information about the condition of the considered components. This allows for a Bayesian formulation of the indicators whereby the experience and expertise of the inspection personnel may be fully utilized and consistently updated as frequentistic information is collected. The approach is illustrated on an example considering a concrete structure subject to corrosion. It is shown how half-cell potential measurements may be utilized to update the probability of excessive repair after 50 years. Furthermore in the same example it is shown how the concept of condition indicators might be applied to develop a cost optimal maintenance strategy composed of preventive and corrective repair measures.     

Homogeneity characterisation of sintered (U,Gd)O2 pellets by X-ray diffraction

(U,Gd)O₂ sintered pellets are fabricated by different methods. The homogeneity characterisation of the Gd content seems to be necessary for a production control to qualify the process and the final product obtained. In this paper, we propose an analysis of the X-ray diffraction powder patterns through the Rietveld method, in which the differences between the experimental and the calculated data proposed from a crystalline structure model are evaluated. This result allows us to determine the cell parameters, that can be correlated with the Gd concentration, and the existence of other phases with different Gd contents.     

Organic Materials and Thin‐Film Structures for Cross‐Point Memory Cells Based on Trapping in Metallic Nanoparticles

Non‐volatile solid‐state memory cells based on composites of metal nanoparticles and polymers are embedded in organic semiconducting host materials. This paper presents data from a wide range of materials and device structures and shows that the switching phenomenon is commonly observed.     

Fermentative hydrogen production in a system using anaerobic digester sludge without heat treatment as a biomass source.

Hydrogen produced from anaerobic fermentation of organic matter is a sustainable energy source. Anaerobic hydrogen-producing systems have been typically seeded with heat-treated inocula to eliminate hydrogen-consuming methanogens. This can be both energy- and economically-intensive. In this work, operational parameters were modified to determine if operating a reactor at low pH (5.5) and low SRT (10 hours) would result in a hydrogen-producing system free of methanogens using anaerobic digester sludge with no heat treatment as an inoculum. Initially, the reactor exhibited a hydrogen productivity of approximately 7.9% when fed glucose. After purging was begun with 10% CO2/90% N2, the hydrogen productivity increased to > 20% for the first day. Hydrogenotrophic methanogens then established themselves in the reactor, reducing the hydrogen productivity in the second non-purged phase by 80%. The operational controls examined were not sufficient to eliminate hydrogen-consuming methanogens for longer than approximately one week, and thus further methods must be developed.     

Intelligent Monitoring for Adaptation in Grid Applications

Grid applications access distributed, and often shared, resources. One consequence of this resource sharing is that measured application performance can vary widely and in unexpected ways. Determining the causes of poor performance, due to either anomalous application behavior or contention for shared resource use, and adapting to changing circumstances are critical to creation of robust Grid applications. Performance contracts and real-time adaptive control are two mechanisms to realize soft performance guarantees in Grid environments. Performance contracts formalize the relationship between application performance needs and resource capabilities. During execution, contract monitors use performance data to verify that expectations are met. When the contracted specifications are not satisfied, the system can choose to either adapt the application to available resources or reschedule the application on a new set of resources that can satisfy the original contract specifications. We describe an infrastructure for Grid application contract development and monitoring. This infrastructure, based on the Autopilot toolkit, provides flexible and scalable tools to assess both application and system behavior.     

Low-Temperature Materials and Thin Film Transistors for Flexible Electronics

This paper addresses the low-temperature deposition processes and electronic properties of silicon based thin film semiconductors and dielectrics to enable the fabrication of mechanically flexible electronic devices on plastic substrates. Device quality amorphous hydrogenated silicon (a-Si:H), nanocrystalline silicon (nc-Si), and amorphous silicon nitride (a-SiN/sub x/) films and thin film transistors (TFTs) were made using existing industrial plasma deposition equipment at the process temperatures as low as 75/spl deg/C and 120/spl deg/C. The a-Si:H TFTs fabricated at 120/spl deg/C demonstrate performance similar to their high-temperature counterparts, including the field effect mobility (/spl mu//sub FE/) of 0.8 cm/sup 2/V/sup -1/s/sup -1/, the threshold voltage (V/sub T/) of 4.5 V, and the subthreshold slope of 0.5 V/dec, and can be used in active matrix (AM) displays including organic light emitting diode (OLED) displays. The a-Si:H TFTs fabricated at 75/spl deg/C exhibit /spl mu//sub FE/ of 0.6 cm/sup 2/V/sup -1/s/sup -1/, and V/sub T/ of 4 V. It is shown that further improvement in TFT performance can be achieved by using n/sup +/ nc-Si contact layers and plasma treatments of the interface between the gate dielectric and the channel layer. The results demonstrate that with appropriate process optimization, the large area thin film Si technology suits well the fabrication of electronic devices on low-cost plastic substrates.