Polysilicon TFT structures for kink-effect suppression

Experimental results and numerical simulations of asymmetric fingered polysilicon thin-film transistors (AF-TFTs) are analyzed in detail. In the AF-TFTs, the transistor channel region is split into two zones with different lengths separated by a floating n/sup +/ region. This structure allows an effective reduction of the kink effect depending on the relative length of the two subchannels, without introducing any additional series resistance. In addition, an appreciable reduction of the leakage current is also observed. The AF-TFTs characteristics have been analyzed by two-dimensional numerical simulation and by modeling the device with two transistors in series. This model clarifies the mechanisms of kink effect suppression in AF-TFT. On the basis of this analysis, two new modified device structures for kink-effect suppression are also proposed and discussed.     

Anomalous off-current mechanisms in N-channel poly-Si thin film transistors

The anomalous off-current (I_off) in polysilicon thin film transistors (polysilicon TFTs) is one of the major problems preventing a wide use of these devices in active matrix liquid crystal displays. While previous investigations have focused on the temperature range above 300 K, in this study we have investigated the behaviour of I_off over a wide range of temperatures, namely 180–400 K. The data have been analysed by combining 2D simulations and existing analytic models. By this approach we have identified a pure trap-to-band tunnelling mechanism in polysilicon TFTs and deduced, by a simple procedure, the physical constants. The temperature and bias dependence of the off-current has been explained quantitatively in terms of phonon-assisted tunnelling. The number of generating centres, the dominant trap energy and the thermal capture cross section are deduced from this analysis.     

Carrier trapping in thin N2O-grown oxynitride/oxide di-layer for PowerMOSFET devices

A detailed study of the carrier trapping properties shown by the silicon/oxynitride/oxide gate layers in PowerVDMOS technologies is reported. A quantitative analysis of hole and electron trap densities versus the specific N₂O based nitridation process, extracted from Fowler–Nordheim constant current stress kinetics, allows a deep understanding of the role played by those defects in the susceptibility of every nitrided layer.     

Performance Evaluation of Packet Mobile Communications through Level Crossing Analysis

In this paper the performance of a packet mobile radio network is studied inthe presence of shadow fading outage intervals.Under quite general assumptions for the medium access protocol,the probability mass function of the sequence of packets that may be lostdue to an outage interval is derived. It is seen that long sequences of lostpackets are likely to occur for typical values of the mobile speed andshadowing correlation parameters.For delay constrained sources, e.g., voice, the analysis is mainly focused atderiving the probability function of the sequence of dropped packetsand the probability of dropping. For data sources, the delay statistic isalso derived. In the latter case, the effect of finite buffer length isaddressed. Simulation is used to verify the accuracy of approximations introduced in the analysis.     

Recyclable,Flexible, Low‐Power Oxide Electronics

The ability to process and dimensionally scale field‐effect transistors with and on paper and to integrate them as a core component for low‐power‐consumption analog and digital circuits is demonstrated. Low‐temperature‐processed p‐ and n‐channel integrated oxide thin‐film transistors in the complementary metal oxide semiconductor (CMOS) inverter architecture are seamlessly layered on mechanically flexible, low‐cost, recyclable paper substrates. The possibility of building these circuits using low‐temperature processes opens the door to new applications ranging from smart labels and sensors on clothing and packaging to electronic displays printed on paper pages for use in newspapers, magazines, books, signs, and advertising billboards. Because the CMOS circuits reported constitute fundamental building blocks for analog and digital electronics, this development creates the potential to have flexible form factor computers seamlessly layered onto paper. The holistic approach of merging low‐power circuitry with a recyclable substrate is an important step towards greener electronics.     

Touch‐Interactive Flexible Sustainable Energy Harvester and Self‐Powered Smart Card

Sustainable and safe energy sources combined with cost effectiveness are major goals for society when considering the current scenario of mass production of portable and Internet of Things (IoT) devices along with the huge amount of inevitable e‐waste. The conceptual design of a self‐powered “eco‐energy” smart card based on paper promotes green and clean energy, which will bring the zero e‐waste challenge one step closer to fruition. A commercial raw filter paper is modified through a fast in situ functionalization method, resulting in a conductive cellulose fiber/polyaniline composite, which is then applied as an energy harvester based on a mechano‐responsive charge transfer mechanism through a metal/conducting polymer interface. Different electrodes are studied to optimize charge transfer based on contact energy level differences. The highest power density and current density obtained from such a paper‐based “eco‐energy” smart card device are 1.75 W m^?2 and 33.5 mA m^?2 respectively. This self‐powered smart energy card is also able to light up several commercial light‐emitting diodes, power on electronic devices, and charge capacitors.     

Giant Anomalous Hall and Nernst Conductivities in Magnetic All-d Metal Heusler Alloys

All-d Heuslers are a category of novel compounds combining versatile functionalities such as caloric responses and spintronics with enhanced mechanical properties. Despite the promising transport properties (anomalous Hall (AHC) and anomalous Nernst (ANC) conductivities) shown in the conventional Co₂XY Heuslers with p-d hybridization, the all-d Heuslers with only d-d hybridization open a new horizon to search for new candidates with outstanding transport properties. In this work, the AHC and ANC are evaluated for thermodynamically stable ferro/ferri-magnetic all-d-metal regular Heusler compounds based on high-throughput first-principles calculations. It is observed that quite a few materials exhibit giant AHCs and ANCs, such as cubic Re₂TaMn with an AHC of 2011 S cm^-1, and tetragonal Pt₂CrRh with an AHC of 1966 S cm^-1 and an ANC of 7.50 A m^-1K^-1. Comprehensive analysis on the electronic structure reveals that the high AHC can be attributed to the occurrence of the Weyl nodes or gapped nodal lines in the neighborhood of the Fermi level. The correlations between such transport properties and the number of valence electrons are also thoroughly investigated, which provides a practical guidance to tailor AHC and ANC via chemical doping for transverse thermoelectric applications.     

Influence of the layer thickness and hydrogen dilution on electrical properties of large area amorphous silicon p–i–n solar cell

The aim of this work is to present data concerning the optimization of performances of a large area amorphous silicon p–i–n solar cell (30×40 cm²) deposited by plasma enhanced chemical vapour deposition (PECVD) at 27.12 MHz. In this work the solar cell was split into small areas of 0.126 cm², aiming to study the device performance uniformity, where emphasis was put on the role of the n-layer thickness. The solar cells were studied through the spectral response behaviour in the 400–750 nm range as well as by the behaviour of the AC impedance. Solar cells with fill factor of 0.58, open circuit voltage of 0.83 V, short circuit current density of 17.14 mA/cm² and an efficiency of 8% were obtained at growth rates higher than 0.3 nm/s.     

Silicon thin films prepared in the transition region and their use in solar cells

Diphasic silicon films (nc-Si/a-Si:H) have been prepared by a new regime of plasma enhanced chemical vapour deposition in the region adjacent of phase transition from amorphous to microcrystalline state. Comparing to the conventional amorphous silicon (a-Si:H), the nc-Si/a-Si:H has higher photoconductivity (σ_ph), better stability, and a broader light spectral response range in the longer wavelength range. It can be found from Raman spectra that there is a notable improvement in the medium range order. The blue shift for the stretching mode and red shift for the wagging mode in the IR spectra also show the variation of the microstructure. By using this kind of film as intrinsic layer, a p–i–n junction solar cell was prepared with the initial efficiency of 8.51% and a stabilized efficiency of 8.01% (AM1.5, 100 mw/cm²) at room temperature.