Propagation of a quasi-shear horizontal acoustic wave in Z-Xlithium niobate plates [and conductivity sensor application]

It is found that an acoustic wave which is nearly polarized in the shear horizontal (SH) direction can propagate along the X axis of a Z-cut lithium niobate plate if the ratio h/λ, where h=plate thickness and λ=acoustic wavelength, is less than about 0.5. Attractive properties of this quasi-SH wave include: (1) phase velocity nearly constant for all values of h/λ; (2) ability to propagate in contact with a liquid medium; and (3) electromechanical coupling coefficient as high as 0.15. These properties make the wave attractive for use in a variety of sensor and signal processing applications. An example of sensor applications is illustrated by using the wave to measure conductivity of liquids (aqueous KCl solution). The frequency of a 12-MHz quasi-SH mode oscillator fabricated on a 0.48 wavelength thick Z-X lithium niobate plate is found to vary by more than 80 kHz for variation in KCI concentration from 0 to 0.15%     

A new erasing method for a single-voltage long-endurance flashmemory

A new method to erase a standard (double-poly, stacked-gate NOR-type) flash cell is proposed. The method, still using the tunneling mechanism to extract electrons from the floating gate, is based on the concept of keeping the electric field constant during the whole erasing operation. The new method has two main advantages with respect to the conventional one: (1) it does not depend on the supply voltage variation and (2) it allows a better reliability in terms of endurance-induced stress. Results have shown that flash device performances are greatly improved in terms of stability and endurance reliability up to one million cycles     

Synthesis and characterization of molybdenum disulphide formed from ammonium tetrathiomolybdate

An investigation has been carried out into the possibility of in situ formation of MoS2 within porous anodic films on aluminium, to improve subsequent tribological behaviour, by re-anodizing in thiomolybdate electrolyte. Acidification of thiomolybdate was employed to simulate the conditions for formation of the sulphide at the anodic film/electrolyte interface, followed by appropriate vacuum heat treatments to study possible temperature effects on the sulphide due to either friction or Joule heating during anodizing. The products of both acidification and heat treatment, characterized by X-ray powder diffraction and scanning electron microscopy, were compared with those formed by direct thermal decomposition of ammonium tetrathiomolybdate crystals. The precipitate formed by acidification was mainly amorphous molybdenum trisulphide (MoS3), which on heat treatment at 450 and 850°C yielded 3R-MoS2. 3R-MoS2 also formed by the thermal decomposition of thiomolybdate crystals. Thermogravimetric and differential thermal analyses showed that the decomposition of MoS3 to MoS2 occurred in the range 220–370°C and revealed the sequence of reaction steps. The findings suggest that mainly amorphous MoS3 is formed as a consequence of changes in the pH of the film/electrolyte interface during re-anodizing but the product is relatively easily transformed to crystalline MoS2 on moderate heating which may occur during wear processes.     

Using MineSet for knowledge discovery

MineSet aids knowledge discovery and supports decision making based on relational data. It uses visualization and data mining to arrive at interesting results. Providing diverse visualization tools lets users choose the most appropriate method for a given problem. The client-server architecture performs most of the computationally intensive tasks on a server, while the processed results return to the client for visualization. The paper discusses MineSet database visualization and data mining visualization     

Simplified 0.35-μm flash EEPROM process using high-temperatureoxide (HTO) deposited by LPCVD as interpoly dielectrics and peripheraltransistors gate oxide

A simplified flash EEPROM process was developed using high-temperature LPCVD oxide both as flash cells interpoly dielectrics and as peripheral transistors gate oxide (decoding logic). An O₂ anneal at 850°C lowers charge trapping and interface trap density induced by Fowler-Nordheim injection. However, electron trapping remains slightly higher than with dry thermal oxide. Similar memory charge loss and write-erase endurance are obtained as for ONO-insulated cells. HTO thus proves to have the required quality and reliability to be used in flash EEPROMs