Electrical characterization of very-narrow-gap bulk HgCdTe single crystals by variable magnetic field hall measurements

Variable-magnetic-field Hall measurements (0 to 1.5 T) are performed on very-narrow-gap bulk-grown Hg_1−xCd_xTe single crystals (0.165 ≤ x ≤ 0.2) at various temperatures (10 to 300K). The electron densities and mobilities are obtained within the one-carrier (electrons) approximation of the reduced-con-ductivity-tensor scheme. The present data together with the selected data set reported by other workers exhibit a pronounced peak when the electron mobility is plotted against the alloy composition x-value which has been predicted to be due to the effective-mass minimum at the bandgap-crossing (E_g ≈ 0). The observed position (x ≈ 0.165), height (≈4 x 10² m²Vs), and width (≈0.01 in x) of the mobility-peak can be explained by a simple simulation involving only ionized-impurity scattering. A lower bound of the effective mass is introduced as a fitting parameter to be consistent with the finiteness of the observed electron mobility and is found to be of the order of 10⁻⁴ of the mass of a free electron.     

Fuzzy logic switching of thyristor controlled braking resistorconsidering coordination with SVC

This paper presents a new switching control scheme for braking resistors (BR) using fuzzy logic to enhance overall stability of electric power systems. In addition, the coordination with an SVC is also considered to achieve a wider stable region. The braking resistor is set on one of the generator busbars, where the real power output from the generator is measured to determine the firing-angle of the thyristor switch. The switching control scheme is simple so as not to require heavy computation on the microcomputer based switching controller. An SVC is set on one of the busbars in the system. The switching of the SVC uses a similar fuzzy logic control scheme to the one for the BR. Simulation results show the effectiveness of the proposed fuzzy logic switching control scheme     

Transcutaneous measurement and spectrum analysis of heart wallvibrations

For the noninvasive diagnosis of heart disease based on the acoustic and elastic characteristics of the heart muscle, it is necessary to transcutaneously measure small vibration signals, including components with an amplitude of less than 100 μm, from various parts of the heart wall continuously for periods of more than several heartbeats in a wide frequency range up to 1 kHz. Such measurement, however, has not been realized by any ultrasonic diagnostic methods or systems to date. By introducing the constraint least-square approach, this paper proposes a new method for accurately tracking the movement of the heart wall based on both the phase and magnitude of the demodulated signal to determine the instantaneous position of the object so that the vibration velocity of the moving object can be accurately estimated. By this method, small vibrations of the heart wall with small amplitudes less than 100 μm on the motion resulting from a heartbeat with large amplitude of 10 mm can be successfully detected with sufficient reproducibility in the frequency range up to several hundred Hertz continuously for periods of about 10 heartbeats. The resultant small vibration is analyzed not only in the time domain, but also in the frequency domain. As confirmed by the preliminary experiments herein reported, the new method offers potential for research in acoustical diagnosis of heart disease     

The Effect of Organic Ligands on the Rate of Loss of Phenylmercuric Nitrate into Rubber Closures and Plastic Containers

The effect of the presence of various organic compounds containing a variety of functional groups on the rate of loss of phenylmericuric (PM) nitrate into plastic containers and rubber closures has been investigated. The presence of organic compounds profoundly influenced the loss of the phenylmercuric nitrate, that loss being dependent upon their chemical structure and concentration. This effect explains the unpredictability of the loss of PM nitrate into polymer matrices from pharmaceutical products.     

Effect of beam voltage on the properties of aluminium nitride prepared by ion beam assisted deposition

The effects of nitrogen-beam voltage on the structure, stress, energy band gap and hardness of AIN thin films deposited on Si (111), Si (100) and sapphire (0001) by ion beam assisted deposition (IBAD) are reported. As the nitrogen-beam voltage was increased from 50 to 200 V, the stress and disorder in the AIN films increased as determined by X-ray diffraction, FTIR and Raman spectroscopy. The preferred orientation of the film's c-axis changed from completely normal to the film at 100 V, to a mixture of normal and in the plane of the film at 200 V. For AIN films deposited under the same conditions, the films were more highly oriented on sapphire (0001) than in Si (111). The hardness of the films increased from 18.2 to 23.7 GPa with the nitrogen-beam voltage, and possible reasons for this change in hardness are considered.     

Some factors affecting the electrical properties of carbon-black-loaded butyl rubber during vulcanization

Butyl rubber mixtures loaded with 70 phr general purpose furnace black (GPF) and tetramethyl thiuram disulphide (TMTD)/S as vulcanizing system were prepared. The kinetics of their electrical conductivity development during the vulcanization process were followed by using an especially devised system. It was found that the increase in the electrical conductivity during vulcanization obeys an exponential growth function with time constant τ, which markedly decreases with increasing vulcanization temperature as well as with the efficiency of the vulcanizing system. After completion of the vulcanization process, about 80 min, the samples obtained possess reasonable stability and reproducibility of electrical conductivity.