Air vent in water chamber and surface coating on liner slides concerning auxiliary cooling system for the high temperature engineering test reactor

Experimental study was made to confirm the validity of new designs of the auxiliary cooling system for the high temperature engineering test reactor (HTTR). First, it is necessary to vent residence air in outlet side of water chamber of the auxiliary heat exchanger for the HTTR. Accordingly, we have proposed to mount a proper bend duct in the outlet side of the water chamber. Air vent is done by difference between pressures at both ends of the bend duct caused by the forced water circulation using the water pumps. From flow tests, it was confirmed that it is capable of venting the air through the bend duct by circulating the water in maximum capacity of the water pumps. Second, it is essential to prevent seizure and excessive wear of the liner slides of the auxiliary concentric hot gas duct for the HTTR at a service temperature of 950°C. Therefore, we have put forward to coat titanium nitride (TiN) on the surface of the liner slides made of nickel-based superalloy Hastelloy XR using the thermochemical vapor deposition method. As a result of seizure and wear tests, it was confirmed that the TiN coating film of 3 μm on the surface of Hastelloy XR is sufficient.     

P-MOSFET's with ultra-shallow solid-phase-diffused drain structureproduced by diffusion from BSG gate-sidewall

A p-MOSFET structure with solid-phase diffused drain (SPDD) is proposed for future 0.1-μm and sub-0.1-μm devices. Highly doped ultrashallow p⁺ source and drain junctions have been obtained by solid-phase diffusion from a highly doped borosilicate glass (BSG) sidewall. The resulting shallow, high-concentration drain profile significantly improves short channel effects without increasing parasitic resistance. At the same time, an in situ highly-boron-doped LPCVD polysilicon gate is introduced to prevent the transconductance degradation which arises in ultrasmall p-MOSFETs with lower process temperature as a result of depletion formation in the p⁺-polysilicon gate. Excellent electrical characteristics and good hot-carrier reliability are achieved     

Resistive superconducting transition of κ-type BEDT-TTF organic superconductors in a magnetic field

The superconducting transition of the organic compoundsκ-(BEDT-TTF)₂ X is studied by resistive measurement in a magnetic field up to 10 T applied normal to the conducting plane. For the salts withX=Cu[N(CN)₂]Br andX=CuCN[N(CN)₂] the transition shows fanshaped broadening caused by superconductivity fluctuation. For theX=Cu(NCS)₂ salt the resistivity shows a peak in the transition region in a magnetic field below 4 T.This phenomenon is suppressed in defect-reduced samples for intralayer conduction. We discuss this peak in relation to the thermal fluctuation on the Josephson junction structures in this salt.     

Progressive bronchial obstruction during the acute stage of respiratory tract infection in asthmatic children

To study the time-course of infectious asthma, we retrospectively examined FEV1 from 5 days before to 10 days after the onset of illness in 31 asthmatic children (20 boys and 11 girls), aged 8 to 12 years. Infections were confirmed by a rise of at least fourfold in serum compliment fixation titers (respiratory syncytial virus, adenovirus, and Mycoplasma pneumoniae) and hemoagglutination inhibition titers (parainfluenza virus types 1, 2, and 3). All the patients had 20 percent or more fall in FEV1 from baseline value during acute phase, but were clinically tolerable and required minimum or no bronchodilators. Regardless of infectious agent, FEV1 began to fall on the first disease day or the previous day, and deteriorate for the first few days. Mean(SD) maximum fall in FEV1 ranged from 39(12) percent to 45(20) percent. Thereafter, FEV1 began to improve and returned to the preillness level by the seventh to tenth day. These results suggest that progressive bronchial obstruction may be inevitable during the acute stage of any infectious asthma.     

Plastic deformation in a multifunctional Ti-Nb-Ta-Zr-O alloy

Mechanisms for plastic deformation in the newly developed Ti-24 at. pct (Ta + Nb + V)-(Zr,Hf)-O alloys (Gum Metal) were investigated in relation to their unique properties. Transmission electron microscopy revealed that the microstructure after deformation was characterized by highly distorted crystal images, which are accompanied by numerous “giant faults.” Such plastic behavior implies that a large amount of elastic stain energy was stored discretely and hierarchically during cold working. Calculated elastic constants of the Ti-X (Nb,Ta,Mo,V) binary systems predicted that Young’s modulus in 〈001〉 and shear moduli along some directions including slip systems in a bcc crystal were extraordinary small. The low modulus not only well explains the highly distorted microstructure observed in the cold-worked specimens, but also signifies that ideal shear strength of the developed alloys is a very small value, which is close to the practical strength required for plastic deformation in the alloy. This implies that the giant faults observed in the deformed specimen were formed without the aid of dislocation glide.     

Radiological hazard of long-lived spallation products in accelerator-driven system

The present paper focuses on analysis of radiological hazard of spallation products that appears to be an important factor that might affect the choice of beam/target performance in designing the accelerator-driven systems. The analysis is done in terms of toxicity expressed in units of Annual Limit on Intake (ALI). It reveals the significant contribution of alpha emitting rare earths (¹⁴⁶Sm, ¹⁴⁸Gd, ¹⁵⁰Gd, ¹⁵⁴Dy) into overall toxicity of spallation targets.     

Intramolecular triplet energy migration in poly(2-vinylnaphthalene) and poly(naphthylalkyl methacrylate)s in solid solution: Effects of side chain length

Summary The effect of side chain length on intramolecular triplet energy migration of naphthalene containing polymers was investigated by a delayed fluorescence (DF) spectroscopy for the solid solution of the polymers. The degree of triplet energy migration depends strongly on whether the chromophores are directly attached to the main chain or not.     

Transmission distance of in-line amplifier systems withgroup-velocity-dispersion compensation

Group-velocity dispersion (GVD) compensation in in-line amplifier systems is evaluated from the viewpoint of improving the transmission distance. The nonlinear Schrodinger equation, which simulates signal propagation in optical fibers, is numerically evaluated to clarify the optimum configuration for GVD compensation. It is shown that the optimum amount of GVD compensation is about 100% of the GVD experienced by the transmitted signal. The optimum compensation interval is found to be a function of the bit rate, signal power, and dispersion parameter. For dispersion parameter values ranging from about -0.1 ps/nm/km to -10 ps/nm/km, and an amplifier noise figure of about 6 dB, the optimum compensation configuration can eliminate the GVD from in-line amplifier systems, thus improving transmission distances to those limited by self-phase modulation and higher-order GVD     

Transient analysis of an advanced static var compensator using quad-series voltage-source PAM inverters

This paper deals with an advanced static Var compensator (ASVC) using quad-series voltage-source PAM inverters. The ASVC consists of four three-phase voltage-source inverters with a common dc capacitor and four three-phase transformers, each primary winding of which is connected in series with each other. Each inverter outputs a square-wave voltage, while the synthesized output voltage of the ASVC has a 24-step wave shape. This results not only in a great reduction of harmonic currents and dc voltage ripples but also in fewer switching and snubbing losses. In this paper, transient analysis is performed with the focus on the response of reactive power and the resonance between the dc capacitor and ac reactors. Experimental results obtained from a small-rated laboratory model of 10 kVA are also shown to verify analytical results based on the p-q transformation. The analytical results help in the design of system parameters such as the capacity of the dc capacitor and feedback gains.