Behaviour of the spin-spin relaxation time for natural rubber vulcanizates under large deformation

The spin-spin relaxation time, T₂, for DCP-cured natural rubber with various crosslink densities, v_e, has been measured under various deformation. T₂ is separated into two components: one is the long T₂ component, T_2L, for the mobility of amorphous network chains, the other is the short one, T_2S, for that of the strain-induced crystalline chains. T_2L decreased exponentially with increasing extension ratio,α, and the decreasing rate was more remarkable with increasing v_e. The α and v_e dependence of T_2L has been quantitatively explained by the equation experimentally derived by Nishi et al.T_2L under various extension increased and became almost constant with increasing temperature, while the corrected fraction of T_2S, T_2S (%), gradually decreased. The apparent melting point, T_m, at which the corrected T_2S (%) was zero under various deformation was determined. The α dependence of T_m, has been discussed by using Flory's equation.     

Novel gene assay by probe-regulated simultaneous separation using capillary electrophoresis (CE-PRESS)

A novel methodology, a probe-regulated simultaneous separation using capillary electrophoresis (CE-PRESS), was developed for simultaneous assay of multiple genes. The single-stranded (ss) DNA-polymer conjugate-probes were placed in a capillary, and then a mixture of target ssDNAs was injected. These ssDNAs were hybridized with corresponding complementary ssDNA-polymer conjugate-probes after charging the capillary. Two resulting double-stranded (ds) complexes of ssDNAs and ssDNA-polymer conjugate-probes were detected at different migration times. We found that the electrophoretic mobilities of two ssDNA-poly(acrylamide) conjugate-probes [-(5'-GCCACCAGC-3')m-AAm(n)- and -(5'-ACCTTCACT-3')p-AAm(q)-; AAm, acrylamide] obtained by copolymerizing 5'-methacryloyl-modified ssDNA and AAm were different, depending on their molar fraction of ssDNA, although the ssDNAs chain lengths were the same. Two ssDNAs (5'-GCTGGTGGC-3' and 5'-AGTGAAGGT-3') having the same chain length were successfully separated with our novel system, although the separation of these ssDNAs is impossible in conventional capillary electrophoresis systems.     

Observations of vibration shape of AT-cut quartz resonator including electric twins

Quartz crystal resonators, including electric twins, are investigated. Electric twins are artificially formed in the usual AT-cut quartz crystal resonantor before the deposition of electrodes. We have directly observed that vibrations generated at electrodes propagate into the outside region isotropically, but cannot propagate into the region of electric twin.     

Magnetic Properties of Superconducting and Nonsuperconducting (Nd0.33Eu0.33Gd0.33)Ba2Cu3Oy

The temperature dependence of the DC susceptibility (T) is measured between 1.7 and 350 K on superconducting and nonsuperconducting bulk melt-processed (Nd_0.33Eu_0.33Gd_0.33)Ba₂Cu₃O_y by means of SQUID magnetometry. A strong superconducting contribution is found to coexist with a large paramagnetic moment provided by the Nd and Gd ions. The paramagnetic contributions measured on both types of samples follow a Curie–Weiss law; however, an antiferromagnetic ordering is not observed down to 1.7 K.     

Gamma-rays irradiation effects on polysulfone at high temperature

The temperature dependence of the irradiation effects on polysulfone was studies by measuring the molecular weight, glass transition temperature, gel fraction and evolved gas. Polysulfone was irradiated with gamma-rays at room temperature, 100, 150, 180 and 210 °C. The change of molecular weight distribution and glass transition temperature showed occurrences of a main chain scission at room temperature and cross-linking at high temperature. The decrease of gel dose, the increases of gel fraction and total gas evolution with increasing temperature was observed. The evolution of CO, CO₂ and SO₂ gases increased at high temperature, while yield of evolved H₂ was independent of irradiation temperature. The probability of the cross-linking was clearly increased by irradiation at high temperature above 180 °C, though the chain scission was not changed very much.     

Growth of crystallized Ge films from VHF inductively-coupled plasma of H2-diluted GeH4

We have studied the Ge crystalline nucleation and film growth on quartz substrate at 250 °C from inductively-coupled plasma (ICP) of GeH₄ diluted with H₂. The ICP was generated by supplying 60 MHz power to an external single-turn antenna which was placed on a quartz plate window of a stainless steel reactor and parallel to the substrate. We have found that the growth rate is significantly increased when the preferential growth of the (110) plane becomes pronounced after the formation of randomly-oriented crystalline network. The (110) oriented Ge films, of which average crystallinity is as high as 70%. The integrated intensity ratio of TO phonons in crystalline phase to those in disordered phase, were grown at a rate of ∼ 4.0 nm/s after the formation of amorphous incubation layer with a thickness of ∼ 0.1 μm on quartz.     

Novel organosiloxane vapor annealing process for improving properties of porous low-k films

A novel 1,3,5,7-tetramethylcyclotetrasiloxane (TMCTS)-vapor annealing method was developed for improving the mechanical strength of porous silica films with a low dielectric constant. TMCTS molecules react with Si-OH groups on the pore wall surfaces to form the polymer network which results in the high hydrophobicity and reinforcement of the silica wall. This method can be used to recover plasma damages induced by etching and ashing in fabricating Cu/low-k interconnects.     

SrCaO Protective Layer for High-Efficiency PDPs

The sustain pulse voltage of the panel for 66-kPa Ne + Xe (5%-30%) is 20%-40% lower with a Sr_0.62Ca_0.38O protective layer than with a MgO protective layer. At a normal sustain voltage of 160-200 V, the luminous efficiency of the panel with the Sr_0.62 Ca_0.38O protective layer for Xe (30%) is about twice as high as with the MgO protective layer for Xe (10%). The luminances of these panels are almost the same. This high efficiency at normal sustain pulse voltage and normal luminance is obtained through the combined use of the Sr_0.62Ca_0.38O protective layer and high Xe content. With regard to ion bombardment, the Sr_0.62Ca_0.38O film has a 4.5 times longer life than SrO film and nearly 80% of the life of MgO film. We also calculated the values of theoretical secondary electron emission yield gamma_imin of MgO, SrO, and CaO without energy bands in the band gap for rare gas ions and found that [ gamma_imin of MgO] les [gamma_imin of CaO] < [gamma_imin of SrO] except for the one case with He. The breakdown voltage decreases with higher gamma_imin values. As expected, the discharge voltage of the panel is much lower with the SrO protective layer than with the MgO protective layer. The discharge voltages of the panels with Sr_0.62Ca_0.38O and SrO protective layers are almost the same. These findings show that the life of the SrO protective layer can be made 4.5 times longer without any increase in the discharge voltage by adding CaO (40 at.%)     

Effect of Annealing Ambient on the Self-Formation Mechanism of Diffusion Barrier Layers Used in Cu(Ti) Interconnects

Copper (titanium) [Cu(Ti)] films with low titanium (Ti) concentration were found to form thin Ti-rich barrier layers at the film/substrate interfaces after annealing, which is referred to as self-formation of the barrier layers. This Cu(Ti) alloy was one of the best candidates for interconnect materials used in next-generation ultra-large-scale integrated (ULSI) devices that require both very thin barrier layers and low-resistance interconnects. In the present paper, in order to investigate the influences of annealing ambient on resistivity and microstructure of the Cu alloys, the Cu(7.3at.%Ti) films were prepared on the SiO₂ substrates and annealed at 500°C in ultra-high vacuum (UHV) or argon (Ar) with a small amount of impurity oxygen. After annealing the film at 500°C in UHV, the resistivity was not reduced below 16 μΩ-cm. Intermetallic compounds of Cu₄Ti were observed to form in the films and believed to cause the high resistivity. However, after subsequently annealing in Ar, these compounds were found to decompose to form surface TiO _x and interfacial barrier layers, and the resistivity was reduced to 3.0 μΩ-cm. The present experiment suggested that oxygen reactive to titanium during annealing played an important role for both self-formation of the interfacial barrier layers and reduction of the interconnect resistivity.     

A novel spacer‐free panel structure and glass for FEDs

Abstract— A new design for an FED envelope, composed of box‐shaped front glass, sheet‐like rear glass, and metal members, has been devised. This design structure is effective in reducing tensile stress induced by vacuum at the sealing points. Also, a new glass composition, a new physical tempering method, and a lead‐free hermetic sealing material have been developed. As a result, a novel lightweight spacer‐free panel structure for FEDs has been developed by integrating these new technologies. It will assist in maximizing the essential advantages of FED such as high image quality, high reliability, and low cost.