Mixing in processing of thermoplastics by extrusion

Translated from Khimicheskoe i Neftyanoe Mashinostroenie, No. 8, pp. 9–11, August, 1993.     

128kb／s电视电话系统中数码率缓存器的控制策略研究

本文探讨了电视电话／会议电视的Ｈ，２６１建议中低码率时（ｐ＝２）数码率缓存器的控制问题，提出一种既有宏观预分配又有微观分割的控制策略（简称ＧＡＬＳ），并用测试图像序列进行了计算机模拟。将本文方法与ＲＭ８中有关策略作了比较，实验结果表明图像的主观质量有所改善。     

分光光度法测定黄磷尾气中总磷

实验研究了溴化硝酸吸收－分光光度法测定黄磷尾气中总磷含量的方法，总磷回收≥97%,方法检测限可达0.2μg/mL.     

应用ITO膜作电荷收集极的位置灵敏探测器

首次尝试将ITO（Indium Tin Oxide）膜与微通道板（Microchannel Plate）结合用作位置灵敏探测器，并对该探测器的线性、位置分辨及探测效率作了测试，得到了令人满意的结果。     

低压宽温高频铝电解电容器工作电解液

在传统的己二酸铵/乙二醇加水体系中,通过增加水的含量实现高电导率,同时在电解液中添加多种有机高分子物质形成复合添加剂,改善工作电解液的高温稳定性,使电容器上限工作温度扩展到105℃,形成高频宽温低阻抗工作电解液。     

倾斜水塔的爆破拆除

针对某部倾斜水塔的定向爆破拆除,从防止水塔倾倒偏移和筒体触地冲击地面对周围环境造成影响等不利情况,确定爆破方案和采取相应的防护措施.     

The Michigan benchmark: towards XML query performance diagnostics

We propose a micro-benchmark for XML data management to aid engineers in designing improved XML processing engines. This benchmark is inherently different from application-level benchmarks, which are designed to help users choose between alternative products. We primarily attempt to capture the rich variety of data structures and distributions possible in XML, and to isolate their effects, without imitating any particular application. The benchmark specifies a single data set against which carefully specified queries can be used to evaluate system performance for XML data with various characteristics.     

氢化非晶硅磷掺杂工艺条件的研究

本文对氧化非晶硅磷掺杂的工艺条件进行了研究，得出掺磷氢化非晶硅的电导率随衬底温度、气体流量、气体压力、射频功率、淀积时间的变化关系，为非晶硅的有效掺杂和器件研究提供了依据。     

Monolithic SiGe Up‐/Down‐Conversion Mixers with Active Baluns

The purpose of this paper is to describe the implementation of monolithically matching circuits, interface circuits, and RF core circuits to the same substrate. We designed and fabricated on‐chip 1 to 6 GHz up‐conversion and 1 to 8 GHz down‐conversion mixers using a 0.8 µm SiGe hetero‐junction bipolar transistor (HBT) process technology. To fabricate a SiGe HBT, we used a reduced pressure chemical vapor deposition (RPCVD) system to grow a base epitaxial layer, and we adopted local oxidation of silicon (LOCOS) isolation to separate the device terminals. An up‐conversion mixer was implemented on‐chip using an intermediate frequency (IF) matching circuit, local oscillator (LO)/radio frequency (RF) wideband matching circuits, LO/IF input balun circuits, and an RF output balun circuit. The measured results of the fabricated up‐conversion mixer show a positive power conversion gain from 1 to 6 GHz and a bandwidth of about 4.5 GHz. Also, the down‐conversion mixer was implemented on‐chip using LO/RF wideband matching circuits, LO/RF input balun circuits, and an IF output balun circuit. The measured results of the fabricated down‐conversion mixer show a positive power conversion gain from 1 to 8 GHz and a bandwidth of about 4.5 GHz.