Trapping and recombination processes via deep level T3 in semi-insulating gallium arsenide

Trapping and recombination of free carriers by deep level T₃ has been studied. Occupancy of the level by electrons and dynamics of its filling and emptying as a function of illumination with monoenergetic photons in 0.69–1.55 eV range has been monitored by the thermally stimulated currents method. We have found that level T₃ behaves more like a recombination center than like an ordinary electron trap. Besides trapping free electrons from conduction band, this trap can also communicate with valence band, trapping holes. The capture cross section for trapping a hole is estimated to be comparable or even larger than the capture cross section for trapping an electron. However, in many experimental conditions free electrons are generated more abundantly than free holes, and free carrier mobility and thermal velocity are both much higher for electrons than for holes. Therefore, electron trapping often prevails, so that this frequently detected defect, has been up to now most often perceived as a deep electron trap.     

Estimation and setting starting values in ARMA algorithms

For the given observations set of the ARMA (autoregressive moving average) process, the likelihood function depends, not only on model parameters, but on the starting values of the input and output. Therefore, it is called theconditional likelihood function. Theunconditional likelihood function can be obtained in two ways. The first is to set the starting values to zero, as is often done, and the second is to set them to the properly estimated values. The difference between these two types of likelihood functions is significant when the given data sequence is short, and any of the zeros of the moving average part is close to the boundary of the unit circle.In this paper the direct method of starting value estimation and its application to two off-line ARMA estimation algorithms, the maximum likelihood (ML) algorithm and the iterative inverse filtering (ITIF) algorithm, is proposed. Experimental results prove both increased efficiency and stability of these algorithms.The importance of setting the starting values properly is also significant when the recursive algorithm, with previously estimated parameters, has to be restarted. The advantage of the proposed reinitialization method is shown on the recursive lattice algorithm working in the block mode.     

Voltammetric and galvanostatic studies of hydrous and anhydrous iridium oxide films

Electrolytically grown hydrous oxide films on iridium wire electrodes have been thermally treated from 473 to 773 K. Anhydrous oxide films formed by this treatment have been subjected to cathodic polarization at the potential of the hydrogen evolution reaction, square-wave pulsing of potential from –0.25 to +1.25 V with respoect to SCE and to anodic galvanostatic polarization in 0.5 mol dm^–3 H₂SO₄. Cathodic pretreatment caused an increase of the voltammetric charge in the oxide formation region while the square-wave pulsing formed a hydrous oxide film whose voltammetric charge was superimposed on the charge of the anhydrous oxide film. Both procedures restored the hydrophilic nature of the electrode/solution interface. Potential-time curves during anodic galvanostatic polarization served as a diagnostic criterion for the stability and the state of the oxide film.     

Free coating of pseudoplastic liquids onto a vertical surface

The coating of pseudoplastic liquids onto a vertical surface continuously withdrawn from the liquid bath is considered. The problem is treated in a two-dimensional nonlinear approach incorporating the inertial effects. The model gives a relationship between the dimensionless film thickness, T, and the Capillary number, Ca, as a function of the fluid physical properties and the parameteres of the power-law model. The comparison with the experimental data is satisfactory.