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91.
Pre-metal-deposition reactive ion etching (RIE) was performed on an Al0.3Ga0.7N/AlN/GaN heterostructure in order to improve the metal-to-semiconductor contact resistance. An optimum AlGaN thickness for minimizing contact resistance was determined. An initial decrease in contact resistance with etching time was explained in terms of removal of an oxide surface layer and/or by an increase in tunnelling current with the decrease of the AlGaN thickness. The presence of a dissimilar surface layer was confirmed by an initial nonuniform etch depth rate. An increase in contact resistance for deeper etches was experienced. The increase was related to depletion of the two-dimensional (2-D) electron gas (2-DEG) under the ohmics. Etch depths were measured by atomic force microscopy (AFM). The contact resistance decreased from about 0.45 Ωmm for unetched ohmics to a minimum of 0.27 Ωmm for 70 Å etched ohmics. The initial thickness of the AlGaN layer was 250 Å. The decrease in contact resistance, without excessive complications on device processing, supports RIE etching as a viable solution to improve ohmic contact resistance in AlGaN/GaN HEMTs  相似文献   
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A sequence of Co78Cr22films, 500 nm in thickness, was prepared by deposition on glass in a modified Varian D.C. magnetron S-gun sputtering system. The substrate temperature during deposition, Ts, was fixed at various values with an upper limit of 300°C. Specimens were examined by VSM, TM, FMR and TEM. Msrises significantly with increasing Ts, peaking at 200°C at 370 emu/cm3. The effective volume-averaged anisotropy drops for Ts>110°C from +1.6 KOe to progressively negative values (-4.3 KOe at 300°C). From FMR we find indications of the presence, in addition to the transition and bulk layers, of a highly negative anisotropy constituent (sim-11.5KOe anisotropy field). This resonance appears at Tsvalues of 150°C and above. TEM plane and cross-section views taken on a Ts= 150°C specimen show islands composed of tilted columns within the bulk. For vertical recording, specimens prepared at Tsvalues between 50 and 100°C are recommended. On the other hand, for longitudinal recording applications, films prepared at Tsvalues above 250°C would seem to be appropriate.  相似文献   
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Pyrolysis experiments were performed in high vacuum and under reduced air pressure (100 Pa). The volatile products of pure cellulose and cellulose containing various amounts of flame retardant 2,2′-oxybis (5,5-dimethyl-1,3,2-dioxaphosphorinane-2,2′-disulfide), i.e., Sandoflam 5060 of Sandoz AG, were studied by means of gas chromatography in combination with mass spectroscopy. The volatile products were characterized with infrared spectroscopy. The studied revealed that the incorporation of the flame retardant enhanced the water release and shifted the onset of this reaction to lower temperature. On the basis of these findings an explanation for the mechanism of flame retardancy in generated cellulose fibers modified with this particular flame retardant is attempted. From experiments with different residual air pressure the influence of oxygen on the primary processes of the pyrolytic degradation of cellulose is being discussed.  相似文献   
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Summary The equilibrium water contents of linear poly(acrylic acid) sodium salts with different degrees of neutralisation were found to be dependent on temperature and relative humidity. An octahedral model for the primary hydration of poly(acrylic acid) sodium salts (HIRAOKA and YOKOYAMA 1980) was critically evaluated in the light of these findings and an anomaly in the water uptake versus neutralisation curve at approximately 33% neutralisation was explained by the counterion condensation theory. (MANNING 1979).  相似文献   
100.
Bounds on the number of samples needed for neural learning.   总被引:1,自引:0,他引:1  
The relationship between the number of hidden nodes in a neural network, the complexity of a multiclass discrimination problem, and the number of samples needed for effect learning are discussed. Bounds for the number of samples needed for effect learning are given. It is shown that Omega(min (d,n) M) boundary samples are required for successful classification of M clusters of samples using a two-hidden-layer neural network with d-dimensional inputs and n nodes in the first hidden layer.  相似文献   
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