微机械可调谐滤波器的研制

利用 Ga As/Al Ga As分布反馈 Bragg反射镜在 Ga As衬底上制作了一个微机械的调谐滤波器 .该器件在 7V调谐电压下调谐范围达28nm     

低重分配概率的OVSF码重分配算法

在采用正交可变长扩频因子(OVSF)码作为信道化码的直接序列扩频码分多址系统中,提出用重分配概率作为重分配算法的一个新的评价指标,重分配概率越小,系统的计算复杂度越低。进而提出一种低重分配概率的、基于空码容量的重分配算法,在解决本次码阻塞的同时,兼顾对未来高数据速率的呼叫的支持能力,减少未来码阻塞发生。仿真证实,重分配概率比已有2种重分配算法都小。     

微波干燥在气相超稳Y型分子筛制备中的应用研究

研究了微波干燥在气相超稳Y型分子筛制备中的应用。结果表明，分子筛经微波干燥后，其理化性质有所改善，结晶度提高，经气相超稳化反应后其产品结构及物化性质与传统电加热干燥后的气相超稳产品基本一致，说明微波干燥可替代传统干燥方式。与传统电加热干燥方式相比，微波干燥能缩短干燥时间，有效降低能耗。     

基于AFM的微结构加工实验研究

本文建立了微动工作台和原子力显微镜相结合的微加工系统，在该系统上采用金刚石针尖进行微加工实验，与SPI系统本身的刻划软件刻划出的图形进行了比较分析，得出这个系统适合微结构的加工；并给出了采用该方法加工的1111面及多边形面微结构；还分析了金刚石针尖几何角度及SPM和工作台的相关参数对加工的影响。     

A Relational Model of Workplace Victimization: Social Roles and Patterns of Victimization in Dyadic Relationships.

This article proposes a model of the ways in which dyadic interactions between employees who occupy 1 of 4 archetypal social roles in organizations can lead to either episodic or institutionalized patterns of victimization. The model shows how the occurrence of victimization involving these 4 role types is influenced by organizational variables such as power differences, culture, and access to social capital. The model integrates behavioral and social structural antecedents of victimization to develop a relational perspective on the dynamics of harmful behavior in the workplace. (PsycINFO Database Record (c) 2010 APA, all rights reserved)     

Enhanced thermal stability of a sputtered titanium-nitride film as a diffusion barrier for capacitor-bottom electrodes

The effect of a thin RuO_x layer formed on the Ru/TiN/doped poly-Si/Si stack structure was compared with that on the RuO_x/TiN/doped poly-Si/Si stack structure over the post-deposition annealing temperature ranges of 450–600°C. The Ru/TiN/poly-Si/Si contact system exhibited linear behavior at forward bias with a small increase in the total resistance up to 600°C. The RuO_x/TiN/poly-Si/Si contact system exhibited nonlinear characteristics under forward bias at 450°C, which is attributed to no formation of a thin RuO_x layer at the RuO_x surface and porous-amorphous microstructure. In the former case, the addition of oxygen at the surface layer of the Ru film by pre-annealing leads to the formation of a thin RuO_x layer and chemically strong Ru-O bonds. This results from the retardation of oxygen diffusion caused by the discontinuity of diffusion paths. In particular, the RuO_x layer in a nonstoichiometric state is changed to the RuO₂-crystalline phase in a stoichiometric state after post-deposition annealing; this phase can act as an oxygen-capture layer. Therefore, it appears that the electrical properties of the Ru/TiN/poly-Si/Si contact system are better than those of the RuO_x/TiN/poly-Si/Si contact system.     

GaN and AlGaN high-voltage rectifiers grown by metal-organic chemical-vapor deposition

In this paper, we report the study of the electrical characteristics of GaN and AlGaN vertical p-i-n junctions and Schottky rectifiers grown on both sapphire and SiC substrates by metal-organic chemical-vapor deposition. For GaN p-i-n rectifiers grown on SiC with a relatively thin “i” region of 2 μm, a breakdown voltage over 400 V, and forward voltage as low as 4.5 V at 100 A/cm² are exhibited for a 60-μm-diameter device. A GaN Schottky diode with a 2-μm-thick undoped layer exhibits a blocking voltage in excess of ∼230 V at a reverse-leakage current density below 1 mA/cm², and a forward-voltage drop of 3.5 V at a current density of 100 A/cm². It has been found that with the same device structure and process approach, the leakage current of a device grown on a SiC substrate is much lower than a device grown on a sapphire substrate. The use of Mg ion implantation for p-guard rings as planar-edge terminations in mesageometry GaN Schottky rectifiers has also been studied.     

菱镁矿固硫特性的理论分析

对菱镁矿在固体燃料燃烧过程中的固硫特性进行了理论研究，所得结论对进一步将菱镁矿作为固体燃料燃烧过程中的固硫剂具有非常重要的意义。     

Reduction of sodium-accelerated oxidation of silicon nitride ceramics by aluminium implantation

Norton NBD 200 silicon nitride ceramics were implanted with sodium to a dose of 7.0×10¹⁵cm^-2 at 72 keV (1 at% peak sodium content at 100 nm). The sodium-implanted samples were further implanted with aluminium to 7.3×10¹⁵cm^-2 at 87 keV (1 at% peak aluminium content at 100 nm). The implanted and unimplanted samples were oxidized in 1 atm dry oxygen at 1100 and 1300°C for 2–6 h. Profilometry and scanning electron microscopy measurements indicated that sodium implantation led to up to a two-fold increase in the oxidation rate of silicon nitride. The sodium effect was effectively neutralized when aluminium was co-implanted. The opposite effects of sodium and aluminium on the oxidation resistance of silicon nitride can be attributed to their different roles in modifying the structure and properties of the oxide formed. This revised version was published online in November 2006 with corrections to the Cover Date.