New Ink Jet Recording for Generating a Plurality of Ink Jet Streams

A new solid-state scanning ink jet recording technique, called slit jet recording, is proposed. This technique uses a recording head with one slitlike ink-issuing opening having a number of recording electrodes arrayed along a horizontal scanning direction. The ink is emitted from the ink-issuing opening due to the electrical potential difference between a driven recording electrode and a counterelectrode located behind the recording paper. The ink strikes the paper and forms a recording dot. Many recording electrodes can be driven simultaneously by video signals which enhance the total copy recording speed over that for conventional techniques using a single nozzle. The head of this ink jet recording apparatus is remarkably simple in construction and can be fabricated without difficulty. Improvements in reliability and maintainability can also be expected, as the simple structure of the ink-issuing opening reduces clogging and facilitates easy cleaning as compared with other equipment having a large number of nozzles. The recording principle and characteristics and ink-issuing characteristics are described, and the results of a trial recording are presented. The results show that an ISO A4 size (210 mm x 297 mm) full-color copy can be recorded in about 30 s at an 8-dot/ mm rate.     

Direct modulation characteristics of GaInAsP/InP d.h. lasers with various stripe widths measured by sharp-pulse method

The direct modulation characteristics of GaInAsP/InP d.h. lasers emitting at 1.3 ?m with various stripe widths were measured by the proposed sharp-pulse method. As a result, a flat modulation frequency response up to 1.9 GHz was observed in a laser diode with 5 ?m stripe width.     

Impact of Al in Cu alloy interconnects on electro and stress migration reliabilities

The reliability of Cu interconnects was successfully improved by applying a CuAl alloy seed. However, the effect of additive Al on the reliability is not fully understood. In order to reveal the reliability improvement mechanism, Cu films using CuAl alloy seed were investigated in detail. As stress induced voiding (SIV) as well as electromigration is caused by migration of vacancies and/or Cu atoms, the measured activation energy value of electromigration using CuAl indicates that the fast diffusion paths are Cu grain boundaries. The analysis using high lateral resolution scanning type secondary ion mass spectrometry (nano-SIMS) clarifies that additive Al in ECP-Cu film is mainly localized at grain boundaries. Furthermore, positron annihilation was used to probe vacancy-type defects in Cu films. The CuAl films before recrystallization contain larger and higher density vacancy-type defects. Whereas, the recrystallized CuAl films after annealing above 250 °C contain smaller and lower density defects. Furthermore, CuAl films with annealing above 350 °C contain less Al inside the grains. These results represent that Al atoms in Cu films with annealing above 350 °C are exhausted from inside grains to the grain boundaries, and the spewed Al atoms existing at Cu grain boundary effectively prevents the diffusion of Cu and/or vacancies.     

Reversible and Precisely Controllable p/n‐Type Doping of MoTe2 Transistors through Electrothermal Doping

Precisely controllable and reversible p/n‐type electronic doping of molybdenum ditelluride (MoTe₂) transistors is achieved by electrothermal doping (E‐doping) processes. E‐doping includes electrothermal annealing induced by an electric field in a vacuum chamber, which results in electron (n‐type) doping and exposure to air, which induces hole (p‐type) doping. The doping arises from the interaction between oxygen molecules or water vapor and defects of tellurium at the MoTe₂ surface, and allows the accurate manipulation of p/n‐type electrical doping of MoTe₂ transistors. Because no dopant or special gas is used in the E‐doping processes of MoTe₂, E‐doping is a simple and efficient method. Moreover, through exact manipulation of p/n‐type doping of MoTe₂ transistors, quasi‐complementary metal oxide semiconductor adaptive logic circuits, such as an inverter, not or gate, and not and gate, are successfully fabricated. The simple method, E‐doping, adopted in obtaining p/n‐type doping of MoTe₂ transistors undoubtedly has provided an approach to create the electronic devices with desired performance.     

The study on change of mechanical properties of NBR due to deterioration

Rubber is an important industrial material. However, mechanical properties and deformation of the high polymer including rubber are not clear. A method of estimating the mechanical properties which can be used for the deteriorated rubber is demanded to improve the reliability of it. Improved VBO (Viscoplasticity theory based on overstress) model is a constitutive equation. We applied it for the compression stress-strain behavior of deteriorated NBR (acryloNitrile-Butadiene rubber). Furthermore, we proposed a method of estimating the mechanical properties of deteriorated NBR. In this paper, deterioration tests in water and in air were conducted. To confirm the validity of the proposed improved VBO model and estimated mechanical properties, simulations of the stress-strain curves obtained in the tests were conducted.     

On-line measurement of orientation development in the high-speed melt spinning process

On-line measurement of birefringence was performed in the high-speed melt spinning process of poly(ethylene terephthalate) using an apparatus that incorporates a rotating polarizer for the measurement of the optical retardation of running filament. Particular attention was paid to the detailed measurements in the vicinity of neck-like deformation. Through the measurement at the take-up velocity of 5 km/min, development of birefringence under the strain rate up to about 1 ms^?1 was investigated. To analyze the relation between applied stress and birefringence, tension and temperature profiles of the spin-line were calculated based on the experimentally obtained diameter profiles. Even though the strain rate is extremely high, a linear relationship between birefringence and a parameter calculated by dividing stress by temperature was confirmed to hold up to birefringence and stress/temperature values of about 0.017 and 10 kPa/K, respectively.     

Enhancement of recombinant soluble dengue virus 2 envelope domain III protein production in Escherichia coli trxB and gor double mutant

The dengue virus is currently the most important flavivirus causing human diseases in the tropical and subtropical regions of the world. The envelope protein domain III of dengue virus type 2 (D2EIII), which induces protective and neutralizing antibodies, was expressed as an N-terminal fusion to a hexa-histidine tag in Escherichia coli. The expression of recombinant D2EIII of 103 amino acids in the soluble form can be achieved using suitable host strains, such as Origami, at a low induction temperature of 18 degrees C. The enhanced production of the soluble protein could be attributed to the thioredoxin reductase (trxB) and glutathione reductase (gor) double mutations in the Origami genome. The soluble and refolded D2EIII proteins were recognized by different antibodies including human patient antiserum. The immunization of rats with soluble D2EIII protein elicited the production of antibodies that could recognize the D2EIII protein in the D2EIII precursor protein and in C-terminal truncated dengue envelope protein type 1-4. Thus, this protein production system is suitable for the production of authentic recombinant dengue proteins that may be used in the diagnosis of the dengue virus infection or in vaccine development.     

Comparative study of behavior of inhaled samarium and cerium in mice

Distribution of Sm and Ce in mice was investigated after inhalation exposure to their oxide particles of 5 μm diameter and 15 mg/m3.Sm and Ce were mainly distributed in lung,their concentrations decreased with passing time,and their concentrations in lung were correlated with exposure periods.Concentrations of Ce were lower than that of Sm in each point.Sm was also distributed in the other organs and bone but Ce was scarcely detected.These results suggest that the behaviors of Sm and Ce inhaled were different,although their chemical properties are similar.