Recording of volume hologram using a beam pattern from taperedoptical fiber

A photorefractive volume hologram was recorded and probed using light diffracted from a tapered optical fiber as a reference beam. A single-mode fiber (SMF) was chemically etched and tapered to give a complicated beam pattern, and it is shown that the tapered optical fiber can be utilized to increase the storage density of the volume hologram. Spatial selectivity of the volume hologram with this method was increased by two times compared to the normal SMF referencing, which is due to the fact that the complicated beam pattern has little correlation with its shifted version     

ONVisor: Towards a scalable and flexible SDN‐based network virtualization platform on ONOS

Network virtualization (NV) technologies have attracted a lot of attention as an essential solution for future networking infrastructure. The NV enables multiple tenants to share the same physical infrastructure and to create independent virtual networks (VNs) by decoupling the physical network in terms of topology, address, and control functions. One feasible way to realize full NV involves considering solutions based on the software‐defined networking (SDN) paradigm using its programmability. The SDN contributes many benefits to both network operations and management including programmability, agility, elasticity, and flexibility. There are several SDN‐based NV solutions; however, they suffered from a lack of scalability, high availability. Also, they have high latency between control and data plane because of proxy‐based architecture. In this thesis, we introduce a new NV platform, named Open Network Hypervisor (ONVisor). The design objectives include, among the features, (1) multitenancy, (2) scalability, (3) flexibility, (4) isolated VNs, and (5) VN federation. ONVisor was designed and implemented by extending Open Network Operating System, an open‐source SDN controller. The main features of ONVisor are (1) isolated control and data plane per VN, (2) support of distributed operations, (3) extensible translators, (4) on‐platform VN application development and execution, and (5) support of heterogenous SDN data‐plane implementations. Several experiments are conducted on various test scenarios in different test environments in terms of control and data plane performance compared to nonvirtualized SDN network. The results show that ONVisor can provide VNs a little bit lower control plane performance and similar data plane performance.     

Analyzing the Boundary Thermal Resistance of Epitaxially Grown Fe<Subscript>2</Subscript>VAl/W Layers by Picosecond Time-Domain Thermoreflectance

To gain deep insight into the mechanism of phonon scattering at grain boundaries, we investigated the boundary thermal resistance by using picosecond pulsed-laser time-domain thermoreflectance for epitaxially grown W/Fe₂VAl/W films. By using radio-frequency magnetron sputtering, we prepared a series of the three-layer films whose Fe₂VAl thickness ranged from 1 nm to 37 nm. The fine oscillation of reflectivity associated with the top W layer clearly appeared in synchrotron x-ray reflectivity measurements, indicating a less obvious mixture of elements at the boundary. The areal heat diffusion time, obtained from the time-domain thermoreflectance signal in the rear-heating front-detection configuration, reduced rapidly in samples whose Fe₂VAl layer was thinner than 15 nm. The ～ 10% mismatch in lattice constant between Fe₂VAl and W naturally produced the randomly distributed lattice stress near the boundary, causing an effective increase of boundary thermal resistance in the thick samples, but the stress became homogeneous in the thinner layers, which reduced the scattering probability of phonons.     

High Areal Capacitance of N‐Doped Graphene Synthesized by Arc Discharge

The lack of cost effective, industrial‐scale production methods hinders the widespread applications of graphene materials. In spite of its applicability in the mass production of graphene flakes, arc discharge has not received considerable attention because of its inability to control the synthesis and heteroatom doping. In this study, a facile approach is proposed for improving doping efficiency in N‐doped graphene synthesis through arc discharge by utilizing anodic carbon fillers. Compared to the N‐doped graphene (1–1.5% N) synthesized via the arc process according to previous literature, the resulting graphene flakes show a remarkably increased doping level (≈3.5% N) with noticeable graphitic N enrichment, which is rarely achieved by the conventional process, while simultaneously retaining high turbostratic crystallinity. The electrolyte ion storage of synthesized materials is examined in which synthesized N‐doped graphene material exhibits a remarkable area normalized capacitance of 63 µF cm^?2. The surprisingly high areal capacitance, which is superior to that of most carbon materials, is attributed to the synergistic effect of extrinsic pseudocapacitance, high crystallinity, and abundance of exposed graphene edges. These results highlight the great potentials of N‐doped graphene flakes produced by arc discharge in graphene‐based supercapacitors, along with well‐studied active exfoliated graphene and reduced graphene oxide.     

Open‐Ended Waveguide Antenna Using a Single Split‐Ring Resonator

This letter proposes an open‐ended waveguide antenna with a single split‐ring resonator. In contrast to the waveguide antennas incorporating multiple rings reported in a previous study, which exhibited narrow bandwidth, the proposed antenna uses only one ring to achieve broader bandwidth while keeping the aperture small. A single ring has a relatively low quality factor compared to multiple rings. The simulated and measured fractional bandwidth was 4.13% and 4.03%, respectively, which is much broader than the fractional bandwidth of about 1% demonstrated in a previous study. This simple technique can be used in many applications that require small apertures including near‐field probes and array elements.     

Surface activation using oxygen and nitrogen radical for Ge-Si Avalanche photodiode integration

In this work, an alternative method for producing the single crystalline Ge-Si Avalanche photodiodes (APD) with low thermal budget was investigated. Structural and electrical investigations show that low temperature Ge to Si wafer bonding can be used to achieve successful APD integration. Based on the surface chemistry of the Ge layer, the buried interfaces were investigated using high resolution transmission electron microscopy as a function of surface activation after low temperature annealing at 200 and 300 °C. The hetero-interface was characterized by measuring forward and reverse currents.     

Extended adaptive RBF equaliser for overcoming co-channelinterference

The authors investigate the problem of nonlinear adaptive equalisation in the presence of intersymbol interference, additive white Gaussian noise and co-channel interference. An extended radial basis function (RBF) network is proposed, in which regression weights are used in the output layer and the hidden unit is defined to have the Gaussian formula with the Mahalanobis distance. It is shown by simulation that the proposed structure gives reduced computational complexity without performance degradation, compared to that of the conventional RBF equaliser     

Recommendations from the commercialization of government-sponsoredtelecommunications R&D with multiple development cycles inKorea

A number of government-sponsored large-scale R&D projects in the telecommunications sector have been carried out in Korea. Among them is the time division exchange (TDX) project that lasted for more than 15 years. The project has two characteristics: the commercialization of government-sponsored R&D and the commercialization of R&D with multiple development cycles. This paper describes these characteristics of the project from various viewpoints: product development strategy, the role of each organization, success factors of each product, the classification of commercial products by commercialization model, and technology transfer strategies encouraging participation of manufacturing firms. We conclude with several recommendations