ELECTRON GUN FOR LARGE ORBIT GYROTRON (LOG) WITH DECREASED INFLUENCE OF CATHODE PLASMA ON ELECTRON BEAM PROPERTIES

High power Large Orbit Gyrotron (LOG) [1] is now under development at FIR FU. First version of this device was recently manufactured and then assembled with power supply ETIGO-IV [2]. Results of preliminary tests of electron-optic system are presented. The conditions when stable flat form of current pulse realized are discussed. Analytical estimations of cathode-anode distance to achieve small influence of cathode plasma during high voltage (HV) pulse are performed. Two new electron gun versions with decreased influence of the cathode plasma on its impedance and pulse form are suggested and optimized. New optimal magnetic field distributions are found. First gun has quiasi-flat cathode configuration near the anode diaphragm and provides operating current about 60 A. Second one uses blade cathode with operating current about 30 A. Beam quality for both guns is suitable for LOG operation.     

Phase and magnetic properties of iron oxide clusters in 20CaO·20SiO2·7Fe2O3·6FeO glasses

The annealing of 20CaO·20SiO₂·7Fe₂O₃·6FeO glasses at 973K in vacuo produced clusters of iron oxide, the shape of which was nearly spherical and the diameter distributed in the narrow range 25–115Å. The phase of clusters was identified to be Fe³⁺(Fe³⁺ _{poststagger|1.30}Fe²⁺ _{poststagger|0.55}V_0.15)·O₄ in the inverse spinel structure based upon the Mössbauer spectra and x-ray diffraction profiles. The clusters exhibited superparamagnetism and their effective anisotropy energy constant was inversely proportional to the cluster diameter. The magnetization of the glasses measured by a vibrating sample magnetometer was 7.2 × 10^-6 Wbmkg^-1 at 10 kOe at room temperature and smaller than the value calculated assuming that the whole clusters have superparamagnetism. These results suggest the pinning of spins near the cluster surface.     

A Configurable Enhanced TTRAM Macro for System-Level Power Management Unified Memory

A twin-transistor random access memory (TTRAM) can provide high speed, low power and high density with CMOS compatible SOI process. However it is difficult to handle as the unified memory required for advanced SoC because it needs the simple control sensing operation for memory compiler, higher cell efficiency, and lower voltage operation for dynamic frequency and voltage control. Enhanced TTRAM (ET²RAM) applies the actively body-bias control technique to realize the low voltage array operation, and never require the negative voltage source. The ET2RAM can realize both 263 MHz at 0.8 V and 10.2 mW at 0.5 V random-cycle operation, higher cell efficiency, and process scalability. It also provides the simple control method suitable for the unified macro for system-level power management SoC with keeping the merits of TTRAM as CMOS compatibility     

Tunable wavelength filter using nano-sized droplets of liquidcrystal

An electrically tunable optical filter has been developed that uses a polymer containing fine droplets of nematic liquid crystal as the active cavity in a Fabry-Perot interferometer (FPI). This FPI filter, whose finesse was 62, had a free spectral range of 37 nm in the 1.55-μm range with a full-width at half maximum of 0.6 nm and a transmission loss of 2.4 dB. The polarization dependent loss was smaller than 0.17 dB. The transmitted peak wavelength decreased with an electric field. This resulted in a tuning range of 10 nm at 300 V. The switching time was about 370 μs     

A QoS-aware routing mechanism for multi-channel multi-interface ad-hoc networks

To accommodate real-time multimedia application while satisfying application QoS requirements in a wireless ad-hoc network, we need QoS control mechanisms. In this paper, we propose a new routing mechanism to support real-time multimedia communication by efficiently utilize the limited wireless network capacity. Our mechanism considers a wireless ad-hoc network composed of nodes equipped with multiple network interfaces to each of which a different wireless channel can be assigned. By embedding information about channel usage in control messages of OLSRv2, each node obtains a view of topology and bandwidth information of the whole network. Based on the obtained information, a source node determines a logical path with the maximum available bandwidth to satisfy application QoS requirements. Through simulation experiments, we confirmed that our proposal effectively routed multimedia packets over a logical path avoiding congested links. As a result, the load on a network is well distributed and the network can accommodate more sessions than QOLSR. We also conducted practical experiments using wireless ad-hoc relay nodes with four network interfaces and verified the practicality of our proposal.     

Compositional design of Pb(Zr, Ti)O3 for highly reliableferroelectric memories

We have investigated Pb(Zr,Ti)O₃ (PZT) film composition suitable for highly reliable ferroelectric RAM (FeRAM) application. To obtain a wide operational margin for 2T/2C (two transistors and two capacitors) FeRAMs, the PZT film capacitor is needed to have a low coercive voltage (V_c) and a high dielectric constant on the polarization switching (ϵ_S) and a low dielectric constant on the nonswitching (ϵ_N), or essentially a large ϵ_S/ϵ_N ratio. Concerning the B-site composition in the perovskite structure, it is found that lowering the Zr/Ti ratio from 47/53 to Ti-richer ones increases the ratio of ϵ_S/ϵ_N as a positive effect on the wide operational margin, but increased V_c as a negative effect. Taking the balance of these factors into consideration, it is concluded that an optimum composition, such as Zr/Ti=30/70, provides the maximum operational margin. The A-site composition, on the other hand, affects the long-term reliability of a PZT capacitor. The endurance to the fatigue and imprint are enhanced by reduction of the Pb-excess and dope of La in the A-site. A La-doped PZT (Zr/Ti =30/70) capacitor is successfully integrated to the 8 kbit FeRAM macro with double-layer Al wiring to confirm the feasibility of this capacitor     

General formulas for capacity of classical-quantum channels

The capacity of a classical-quantum channel (or, in other words, the classical capacity of a quantum channel) is considered in the most general setting, where no structural assumptions such as the stationary memoryless property are made on a channel. A capacity formula as well as a characterization of the strong converse property is given just in parallel with the corresponding classical results of Verdu-Han (1994) which are based on the so-called information-spectrum method. The general results are applied to the stationary memoryless case with or without cost constraint on inputs, whereby a deep relation between the channel coding theory and the hypothesis testing for two quantum states is elucidated.     

Maximum Likelihood Approach for RFID Tag Set Cardinality Estimation with Detection Errors

Estimation schemes of Radio Frequency IDentification (RFID) tag set cardinality are studied in this paper using Maximum Likelihood (ML) approach. We consider the estimation problem under the model of multiple independent reader sessions with detection errors due to unreliable radio communication links and/or collisions. In every reader session, both the detection error probability and the total number of tags are estimated. In particular, after the $R$ -th reader session, the number of tags detected in $j$ ( $j=1,2,...,R$ ) reader sessions out of $R$ sessions is updated, which we call observed evidence. Then, in order to maximize the likelihood function of the number of tags and the detection error probability given the observed evidences, we propose three different estimation methods depending on how to treat the discrete nature of the tag set cardinality. The performance of the proposed methods is evaluated under different system parameters and compared with that of the conventional method via computer simulations assuming flat Rayleigh fading environments and framed-slotted ALOHA based protocol.     

X-band MMIC amplifier with pulse-doped GaAs MESFET's

The design and test of an X-band monolithic four-stage low-noise amplifier (LNA) with 0.5 μm-gate pulse-doped GaAs MESFETs for application in a direct broadcast satellite (DBS) converter is presented. The key feature of the research is a detailed demonstration of the advantages of using series feedback with experiments and simulations. This LNA shows an excellent input VSWR match under 1.4 as well as a noise figure of 1.67 dB and a gain of 24 dB at 12 GHz. The noise figure, the gain and VSWRs exhibit very little bias current dependence due to the exceptional features of the pulse-doped structure FETs and the optimized circuit design. Insensitivity to bias current implies performance stability in the face of process fluctuations. Thus, the yield of chips with noise figures of less than 2.0 dB is as high as 62.5%, and the variations of gain and VSWR are highly uniform as well     

Design of Cavities for a Short Pulse Powerful Large Orbit Gyrotron

Designs of cavities for fundamental and high harmonic operation in Large Orbit Gyrotron (LOG) are discussed. The fundamental operation allows one to use beam currents in the range from 200 A to 300 A achieve output power of the order of 9–10 MW at frequency 143.6 GHz. Mode competition calculations show that stable oscillations in the TE^1,4 mode using high beam currents are possible even with the pitch factor 1.3 which is significantly lower than the design value 1.55. For the second harmonic operation, the maximum current used for excitation of the TE^2,4 mode is 60 A and the optimum magnetic field is 7.6 T. A cavity design for fourth harmonic operation using the TE^4,4 mode is also presented.