为了满足使用者需求而设计——上海地铁研究·使用者需求

在上海地铁研究中,我们发现了许多使用者的不满。这些不满来自于设计师对使用者的缺乏了解和缺乏关注。通过对上海地铁真实的使用者、真实的地点和真实的时间的调研,我们分析出25项上海地铁使用者的需求。并提出希望设计师能够从这些使用者的需求出发,去作为使用者带来良好体验的设计。     

吸入短寿命氡子体动物肺组织剂量与体重关系的探讨

本文介绍吸入短寿命氡子体的不同种动物肺组织吸收剂量与体重的关系。实验结果表明,吸收剂量随体重的增加而减小。     

巯基棉预浓集—中子活化法测定水泥及其浸出水中的微量汞

在不同酸度下巯基棉可以从溶液中富集和分离Au、As、Ag、Br、Cu、Ca Co、InHg、Ni、Se、Sb、Sn、Pb、W、Fe和In等30多种元素。由于用巯基棉吸附待测元素后不必洗脱,因此大大提高了富集能力,可用于海水、地下水、地表水及工业废水中一些元素的测量。本文用巯基棉富集后进行中子活化分析测定水泥及其浸出水中的汞。     

Data mining of resilience indicators

In recent years, the Asia-Pacific region has experienced several financial setbacks, including speculative attacks in 1998 and the SARS outbreak in 2003. Financial stresses of this nature are unanticipated, and not all of the dangers can be predicted by the examination of market information and macroeconomic indicators. The Early Warning System (EWS) that has been adopted by the International Monetary Fund may not be able to predict future financial crises for all possible scenarios, because shocks come in many different forms. To supplement the EWS, this paper proposes a data mining framework to measure the resilience of an economy. The resilience framework does not predict a crisis, but rather assesses the current state of health of an economy and its ability to withstand a financial shock should one occur. The framework is based on a feedback system consisting of two stages. The first stage assigns a resilience score to each economy based on a fuzzy logic scoring scheme that is built on the ambiguous reasoning of experts. The second stage uses the classification tree approach to estimate thresholds for each economic indicator, and examines the quality of the fuzzy score. The result from the second stage is then passed back to the first stage as feedback. The final result is obtained when the feedback system reaches its equilibrium state. The proposed resilience framework is applied to the external-sector and the public-sector economies of several countries to illustrate its applicability.     

Kinetics of chlorination of tantalum pentoxide in mixture with sucrose carbon by chlorine gas

The mechanism and kinetics of β-Ta₂O₅ chlorination, mixed with sucrose carbon, have been studied by a thermogravimetric technique. The investigated temperature range was 500 °C to 850 °C. The reactants and reaction residues were analyzed by scanning electronic microscopy (SEM), X-ray diffraction (XRD), and Brunauer-Emmett-Teller method for surface area (BET). The effect of various experimental parameters was studied, such as carbon percentage, temperature, chlorine partial pressure, and flow, use of the multiple sample method, and carbon previous oxidation. The carbon percentage and previous treatment have an effect on the system reactivity. The temperature has a marked effect on the reaction rate. In the 500 °C to 600 °C temperature interval, the apparent activation energy is 144 kJ/mol of oxide, while at higher temperatures, the activation energy decreases. With high chorine partial pressures, the order of reaction is near zero. The kinetic contractile plate model, X=kt, considering carbon oxidation as the controlling stage, is the one with the best fit to the experimental data. A probable mechanism for the carbochlorination of β-Ta₂O₅ is proposed: (1) activation of chlorine on the carbon surface, (2) chlorination of Ta₂O₅, (3) oxidation of carbon, and (4) recrystallization of β-Ta₂O₅.     

N-Type Field-Effect Transistors Using Multiple Mg-Doped ZnO Nanorods

Nanorod field-effect transistors (FETs) that use multiple Mg-doped ZnO nanorods and a SiO₂ gate insulator were fabricated and characterized. The use of multiple nanorods provides higher on-currents without significant degradation in threshold voltage shift and subthreshold slopes. It has been observed that the on-currents of the multiple ZnO nanorod FETs increase approximately linearly with the number of nanorods, with on-currents of ~1 muA per nanorod and little change in off-current (~4times10^-12). The subthreshold slopes and on-off ratios typically improve as the number of nanorods within the device channel is increased, reflecting good uniformity of properties from nanorod to nanorod. It is expected that Mg dopants contribute to high n-type semiconductor characteristics during ZnO nanorod growth. For comparison, nonintentionally doped ZnO nanorod FETs are fabricated, and show low conductivity to compare with Mg-doped ZnO nanorods. In addition, temperature-dependent current-voltage characteristics of single ZnO nanorod FETs indicate that the activation energy of the drain current is very low (0.05-0.16 eV) at gate voltages both above and below threshold