Address Remapping Techniques for Enhancing Fabrication Yield of Embedded Memories

Error correction code (ECC) and built-in self-repair (BISR) techniques have been widely used for improving the yield and reliability of embedded memories. The targets of these two schemes are transient faults and hard faults, respectively. Recently, ECC is also considered as a promising solution for correcting hard error to further enhance the fabrication yield of memories. However, if the number of faulty bits within a codeword is greater than the protection capability of the adopted ECC scheme, the protection will become void. In order to cure this drawback, efficient logical to physical address remapping techniques are proposed in this paper. The goal is to reconstruct the constituent cells of codewords such that faulty cells can be evenly distributed into different codewords. A heuristic algorithm suitable for built-in implementation is presented for address remapping analysis. The corresponding built-in remapping analysis circuit is then derived. It can be easily integrated into the conventional built-in self-repair (BISR) module. A simulator is developed to evaluate the hardware overhead and repair rate. According to experimental results, the repair rate can be improved significantly with negligible hardware overhead.     

Nanowrinkled and Nanoporous Polyethylene Membranes Via Entanglement Arrangement Control

Crystalline homopolymers, including polyethylene (PE), which has the simplest architecture, form a nanometer‐sized combination of crystalline and amorphous components, but their arrangement control, similar to self‐assembled phase‐separation of block‐copolymers, is usually difficult. However, molecular entanglements trapped between crystalline and amorphous components of homopolymers coincide with the segmental linking points on the interfaces of the microphase separation for block copolymers. Nanowrinkled PE membranes are prepared with a network of 30 nm‐thick homogeneous lamellae using a novel entanglement control technique composed of biaxial melt‐drawing and melt‐shrinking procedures, which are limited for highly entangled ultrahigh molecular weight materials. Such a network arrangement of nanowrinkling lamellae spreading on membrane surface and also across the membrane thickness improves the mechanical properties of both tensile strength and tearing strength. Subsequent cold‐drawing causes delamination of the lamellar interfaces, leading to the resultant nanoporous morphology composed of passing‐through channels that are several tens of nanometers in diameter, without any solvent processing.     

A Hybrid Decoupled Power Flow Method for Balanced Power Distribution Systems

This paper proposes a hybrid decoupled power flow method for balanced power distribution systems with distributed generation sources.The method formulates the power flow equations in active power and reactive power decoupled form with polar coordinates.Second-order terms are included in the active power mismatch iteration,and constant Jacobian and Hessian matrices are used.A hybrid direct and indirect solution technique is used to achieve efficiency and robustness of the algorithm.Active power correction is solved by means of a sparse lower triangular and upper triangular(LU) decomposition algorithm with partial pivoting,and the reactive power correction is solved by means of restarted generalized minimal residual algorithm with an incomplete LU pre-conditioner.Typical distribution generation models and distribution load models are included.The impact of zero-impedance branches is explicitly modeled through reconfiguring of the adjacent branches with impedances.Numerical examples on a sample distribution system with widespread photovoltaic installations are given to demonstrate the effectiveness of the proposed method.     

HVEM study of crack-tip dislocations in Si crystals prepared by FIB and twin-blade cutting method

Crack-tip dislocations in silicon crystals have been examined by using high-voltage electron microscopy. Cracks were introduced by the Vickers indentation method at room temperature and the indented specimens were annealed at high temperatures to induce dislocations around crack tips under the presence of residual stress due to the indentation. A selected area around a crack tip was thinned by a focused ion beam (FIB) technique. Specimens were thinned in advance by a twin-blade cutting (TBC) method, which is a simple cutting process for saving FIB machine time. A combination of FIB and TBC can be a useful thinning procedure for the efficient preparation of transmission electron microscopy specimens. Characteristic dislocation structures were observed around the tip of a crack, aiding the elucidation of dislocation processes, which is essential to increase the fracture toughness of materials.     

Two-dimensional numerical simulation of side-gating effect in GaAsMESFETs

Two-dimensional device simulations that confirm that the side-gating effect in GaAs MESFETs occurs on semi-insulating substrates containing hole traps are discussed. A negative voltage applied on a side gate, a separate n-type doped region, causes an increase in the thickness of the negatively charged layer at the FET channel interface in the substrate, through hole emission from hole traps. The FET channel current is modulated by the electron depletion of the n-type channel, which results from the compensation for the extension of the negatively charged layer at the n-i interface into the i-substrate containing hole traps. The magnitude of the drain current reduction is determined by the total acceptor concentration in the substrate and the donor concentration of the channel. However, the magnitude is independent of the side-gate distances     

Transmission Characteristics of Hybrid Modes in Corrugated Waveguides Above the Bragg Frequency

We studied the transmission characteristics of hybrid modes in a corrugated circular waveguide above the Bragg frequency to develop a broad-band transmission line for millimeter waves. Millimeter waves at 294 GHz were transmitted into a straight waveguide. From observed power profiles in waveguide cross-sections, a high attenuation rate of 0.13 dB/m was obtained. To match a theoretical attenuation constant with the experimental one, we introduced an ad hoc coefficient of conventional surface reactance in the waveguide wall. This was necessary because the wall began to look like the surface with a decreasing anisotropic reactance owing to the frequency above the Bragg frequency. Using nonlinear optimization for mode content analysis, the observed power profiles in the waveguide cross-section were matched with theoretical profiles. There was good agreement between the calculated and observed centers of power profiles and attenuation rate along the waveguide. The theoretical analysis showed that the magnetic field at the waveguide wall increases and the substantial attenuation takes place. Above the Bragg frequency coupling to backwards propagating modes is a point of consideration. A combination of the backwards propagating EH_1,26 and the forward propagating HE₁₁ modes satisfied the Bragg condition at 294.7 GHz which was the nearest frequency of operating frequency. A strong attenuation of the incoming HE₁₁ mode by Bragg resonance was not expected due to large difference of 0.7 GHz. It becomes clear that the observed high transmission loss outside of the Bragg resonance can be explained by a decrease in anisotropic surface reactance at the wall.     

Fast and Ultraclean Approach for Measuring the Transport Properties of Carbon Nanotubes

In this work, a fast approach for the fabrication of hundreds of ultraclean field‐effect transistors (FETs) is introduced, using single‐walled carbon nanotubes (SWCNTs). The synthesis of the nanomaterial is performed by floating‐catalyst chemical vapor deposition, which is employed to fabricate high‐performance thin‐film transistors. Combined with palladium metal bottom contacts, the transport properties of individual SWCNTs are directly unveiled. The resulting SWCNT‐based FETs exhibit a mean field‐effect mobility, which is 3.3 times higher than that of high‐quality solution‐processed CNTs. This demonstrates that the hereby used SWCNTs are superior to comparable materials in terms of their transport properties. In particular, the on–off current ratios reach over 30 million. Thus, this method enables a fast, detailed, and reliable characterization of intrinsic properties of nanomaterials. The obtained ultraclean SWCNT‐based FETs shed light on further study of contamination‐free SWCNTs on various metal contacts and substrates.     

High-Density Frenkel Defects as Origin of N-Type Thermoelectric Performance and Low Thermal Conductivity in Mg3Sb2-Based Materials

Mg₃Sb₂-based intermetallic compounds with exceptionally high thermoelectric performance exhibit unconventional n-type dopability and anomalously low thermal conductivity, attracting much attention to the underlying mechanisms. To date, investigations have been limited to first-principle calculations and thermodynamic analysis of defect formation, and detailed experimental analysis on crystal structure and phonon modes has not been achieved. Here, a synchrotron X-ray diffraction study clarifies that, against a previous view of a simple crystal structure with a small unit cell, Mg₃Sb₂ is inherently a heavily disordered material with Frenkel defects, charge-neutral defect complexes of cation vacancies and interstitials. Ionic charge neutrality preserved in Mg₃Sb₂ is responsible for exotic n-type dopability, which is unachievable for other Zintl phase materials. The thermal conductivity of Mg₃Sb₂ exhibits deviation from the standard T⁻¹ temperature dependency with strongly limited phonon transport due to a strain field. Inelastic X-ray scattering measurement reveals enhanced phonon scattering induced by disorder. The results will draw renewed attention to crystal defects and disorder as means to explore new high-performance thermoelectric materials.     

Logic gate for optical input using monostable-bistable transitionof serially connected resonant tunnelling transistors

The authors demonstrate a novel optical logic gate consisting of two resonant tunnelling transistors connected in series. The logic gate is characterised by an optically controlled bistability of the gate and a small optical input power of 10 μW realised by using the monostable-bistable transition of the gate     

Fast clock synchroniser using initial phase presetting DPLL (IPP-DPLL) for burst signal reception

A fast clock synchroniser that quickly adjusts the initial phase of the DPLL output clock to the input signal (receiver detector output) at the beginning of acquisition is proposed for burst QDPSK signal reception. The synchroniser performance is given in terms of nondetection rate (NDR) of the unique word following the clock synchronisation preamble. Measured results clearly indicate that the proposed synchroniser achieves faster synchronisation than the conventional binary quantised DPLL clock synchroniser.<>