IL-12 promotes the adhesion of NK cells to endothelial selectins under flow conditions

This study examined the adhesive interactions of peripheral blood NK cells with P- and E-selectin and analyzed the effect of IL-12 on the binding of NK cells to these selectins. P-selectin glycoprotein ligand-1 (PSGL-1) is expressed on most resting and IL-12-activated NK cells. However, the percentage of resting NK cells bound to P-selectin-IgG was 15%, and that of activated NK cells bound to P-selectin-IgG was 65%. Furthermore, the number of IL-12-activated NK cells bound to P-selectin-transfected Chinese hamster ovary cells was significantly higher than that of resting NK cells under flow conditions. These interactions were abolished by the incubation of these NK cells with anti-PSGL-1 (PL-1) mAb. Thus, PSGL-1/P-selectin interaction is important in the binding of resting and activated NK cells to P-selectin. NK cells express sialyl-Lewis(x) (sLe(x)) structure recognized by anti-sLe(x) mAb (KM-93), and IL-12 activation of NK cells increased the mean fluorescence intensity of KM-93-reactive NK cells. Adhesion of IL-12-activated NK cells to E-selectin-transfected Chinese hamster ovary cells was stronger than that of resting NK cells under flow conditions. These interactions were reduced markedly by incubation with anti-sLe(x) mAb. Thus, sLe(x) is the major ligand of resting and activated NK cells for E-selectin. These findings indicate that IL-12 stimulation of NK cells promotes their adhesion activity to endothelial selectins.     

MAP kinase pathways as a route for regulatory mechanisms of IL-10 and IL-4 which inhibit COX-2 expression in human monocytes

Herein we describe a new test system to produce a standardized partial muscle-tendon junction (MTJ) stretch injury. In anesthetized rabbits the tibialis anterior (TA) muscle-tendon unit is unilaterally shortened using a custom designed clamp roller system. An angular displacement (average velocity of 450 degrees x s[-1]) is applied about the foot to plantarflex the ankle 90 degrees while the lower extremity is fixed. During ankle rotation the TA muscle is tetanically stimulated to generate an eccentric stretch injury at the MTJ. Forty-eight hours after injury, isometric torque deficit (injured/sham) was measured. Two groups of animals (N = 6 in each group) were tested with the only difference between the two groups being the initial tendon shortening. In Group 1 (tendon shortening = 1.2 cm. N = 6) the torque deficit was 36.7+/-5.9% (mean+/-SD). In Group 2 (tendon shortening = 1.5 cm. N = 6) the torque deficit was 58.7+/-7.4% (mean+/-SD). No order effect was suggested by the data (P = 0.6062), but the difference in torque deficit between the two groups was highly significant (P = 0.0001). For all tests in which the tendon was temporarily shortened before muscle stimulation and stretch (N = 12) there was a visible hematoma at the MTJ similar to the injury that is common in athletic injuries. Histological evaluation 48 h after injury revealed both fiber tearing and inflammation at the MTJ. In addition, there was focal fiber damage in the muscle belly for both groups. The damage and inflammatory process, however, were more severe in the group with greater initial tendon shortening.     

Association between bleomycin hydrolase and Alzheimer's disease in caucasians

A recent study showed modest evidence for an increased frequency of the bleomycin hydrolase (BH) V/V genotype in Alzheimer's disease (AD) patients compared with non-demented controls. To test this hypothesis, we examined this polymorphism in 621 rigorously evaluated patients and 502 control subjects (all caucasian) but were unable to detect an association between BH and AD even after controlling for age, gender, and apolipoprotein E (ApoE) genotype. We conclude that this polymorphism does not account for inherited susceptibility to AD in the populations represented in this sample.     

A system LSI memory redundancy technique using an ie-flash(inverse-gate-electrode flash) programming circuit

A new memory redundancy technique using inverse-gate-electrode flash (ie-flash) memory cells has been developed. The ie-flash can be fabricated by the conventional logic CMOS process, so no additional processes are necessary in using it in system LSIs, and it can be programmed by logic testers. We enhanced the reliability of ie-flash by using some circuits, increasing reliability to endure practical use. This new redundancy technique was successfully implemented in the cache memories of a 32-b RISC microprocessor     

Oxidation of trichloroethylene and dimethyl sulfide by a marine Methylomicrobium strain containing soluble methane monooxygenase

Sixteen marine methanotrophic bacteria were isolated and 14 marine methanotrophic mixed cultures were obtained. They were assayed for soluble methane monooxygenase (sMMO) by naphthalene oxidation and only one isolate (strain NI) was positive. Strain NI degraded trichloroehylene (TCE) more efficiently than other methanotrophic isolates containing no sMMO only under copper limiting conditions. Dimethyl sulfide (DMS), one of the radiatively important trace gases released from the sea, was transformed to dimethyl sulfoxide (DMSO) by methanotrophs and the efficiency for the transformation of DMS to DMSO was not as much affected by the presence of sMMO as that of TCE. The taxonomical properties of strain NI and phylogenetic analysis based on 16S rDNA genes indicated that strain NI was a type I methanotroph belonging to the genus Methylomicrobium, and closely related to Methylomicrobium pelagicum. The partial mmoX gene of strain NI was amplified by the primers common to three other mmoX genes and its 270 bp were sequenced. 77 residues out of the 89 amino acids derived from the sequences were common among the four mmoX genes.     

High-resolution electron microscopy of nanocrystalline Ni-Al alloys: instability of ordered structure and dynamic behaviour of grain boundaries

High-resolution transmission electron microscopy was performed on vacuum-deposited nanocrystalline nickel aluminide films. Several nickel aluminide ordered structures, i.e. L1₂(Ni₃Al)-, B2(NiAl)-, D5₁₃(Ni₂Al₃)- and D0₂₀(NiAl₃)-type structures, were observed in the deposited films. The L1₂ and B2 ordered structures became unstable with decreasing grain sizes. The critical grain size on transformation from the L1₂- and B2-type ordered structures into disordered structures was ca. 5 nm at ambient temperatures. High atomic diffusion, sufficient for grain growth, and an increase in the ordering occurred just above 400°C in the nanocrystalline Ni-Al films with L1₂- and B2-type structures. The diffusion bonding process, at ambient temperatures, between Ni-Al nanocrystallites with an L1₂-type structure was observed dynamically at atomic resolution under strong electron irradiation. It was found that the nanocrystallites rotated and slid without crack generation, and neck-growth proceeded even at ambient temperatures.     

Etching of diamond octahedrons at high temperatures and pressure with controlled oxygen partial pressure

Etching of a natural diamond octahedron was carried out at temperatures of 800 to 1400° C and at pressures of 15 and 40 kbar under controlled oxygen partial pressure in the range 10⁻¹⁷ to 10⁴ atm by use of oxygen buffers. Well-defined etch pits of equiangular triangule outline were formed. When the results were plotted based on logP _{O 2} versus 1/T, reversal of the pit orientation clearly occurred on a boundary curve expressed by an equation, logP _{O 2}=−9.0×10⁴/T+63, whereP _{O 2} (atm) andT (K) are oxygen partial pressure and temperature, respectively. Etch pits with the same orientation as an octahedral face were produced in a low temperature and highP _{O 2} region, and those with the opposite orientation, i.e. the same as for natural “trigon”, were produced in the other region.     

Characteristics of enhancement/depletion (E/D) gate MOSFET fabricated using ion implantation

The E/D gate MOSFET, which has an enhancement and depletion mode region under the same gate, is fabricated by using ion implantation as a tool for shifting threshold voltage. Threshold voltage, transconductance and drain breakdown voltage are studied as functions of implantation dose up to 12 × 10¹² cm^?2.It is found that, at an appropriate dose, the transconductance of this device is determined solely by the channel length of the enhancement mode region, and is larger than that of a short channel MOSFET with a standard structure but with the same drain breakdown voltage. Moreover, the dependence of threshold voltage on substrate bias measured in this device is found less sensitive to the transconductance than that in the standard short channel MOSFET.     

Manufacturing process and properties of nuclear RPV shell ring forged from hollow ingot

A shell ring for an RPV of a 1300 MWe type PWR was forged from a 200-ton hollow ingot, and its very high quality regarding the internal qualities, tensile properties, fracture toughness, fatigue properties and underclad cracking properties were confirmed. The steel was refined by a basic oxygen furnace and degassed by a vacuum treatment furnace.The manufacturing process of a large hollow ingot has been established by an improved core structure which enabled segregation of chemical components to be decreased and a clean inner surface to be obtained.