Effect of silver content on thermal fatigue life of Sn-xAg-0.5Cu flip-chip interconnects

The thermal fatigue properties of Sn-xAg-0.5Cu (x=1, 2, 3, and 4 in mass%) flip-chip interconnects were investigated to study the effect of silver content on thermal fatigue endurance. The solder joints with lower silver context (x=1 and 2) had a greater failure rate compared to those with higher silver content (x=3 and 4) in thermal fatigue testing. Cracks developed in the solders near the solder/chip interface for all joints tested. This crack propagation may be mainly governed by the nature of the solders themselves because the strain-concentrated area was similar for tested alloys independent of the silver content. From the microstructural observation, the fracture was a mixed mode, transgranular and intergranular, independent of the silver content. Higher silver content alloys (x=3 and 4) had finer Sn grains before thermal cycling according to the dispersion of the Ag₃Sn intermetallic compound, and even after the cycling, they suppressed microstructural coarsening, which degrades the fatigue resistance. The fatigue endurance of the solder joints was strongly correlated to the silver content, and solder joints with higher silver content had better fatigue resistance.     

Optimization of L-lactic acid feeding for the production of poly-D-3-hydroxybutyric acid by Alcaligenes eutrophus in fed-batch culture

We investigated optimization of the feeding of L-lactic acid for the production of poly-D-3-hydroxybutyric acid [P(3HB)] by Alcaligenes eutrophus in a fed-batch culture system. An acidic substrate solution was fed automatically so as to maintain the pH of the culture liquid at 7.0. Feeding of a substrate solution containing 45% (w/v) L-lactic acid, 6.2% (w/v) sodium L-lactate, 5.8% (w/v) ammonia water and 1.8% (w/v) potassium phosphate [at a molar ratio of carbon to nitrogen (C/N molar ratio) of 10], allowed the L-lactate concentration in the culture liquid to be maintained at approximately 2 g/l and the cell concentration reached 27.4 g/l after 15 h of cultivation. To promote P(3HB) production, a two-stage fed-batch culture consisting of a culture for cell growth and one for P(3HB) accumulation was carried out. When the substrate solution, whose C N molar ratio was 23, was fed during the P(3HB) accumulation phase, the cell concentration and the P(3HB) content in the cells reached 103 g/l and 57.6% (w/w), respectively, in 51.5 h.     

A 62-ns 16-Mb CMOS EPROM with voltage stress relaxation technique

To meet the increasing demand for higher-density and faster EPROMs, a 16-Mb CMOS EPROM has been developed based on 0.6-μm N-well CMOS technology. In scaled EPROMs, it is important to guarantee device reliability under high-voltage operation during programming. By employing internal programming-voltage reduction and new stress relaxation circuits, it is possible to keep an external programming voltage V_pp of 12.5 V. The device achieves a 62-ns access time with a 12-mA operating current. A sense-line equalization and data-out latching scheme, made possible by address transition detection (ATD), and a bit-line bias circuit with two types of depletion load led to the fast access time with high noise immunity. This 16-Mb EPROM has pin compatibility with a standard 16-Mb mask-programmable ROM (MROM) and is operative in either word-wide or byte-wide READ mode. Cell size and chip size are 2.2 μm×1.75 μm and 7.18 mm×17.39 mm, respectively     

Hydroxyl group formation caused by hydrogen diffusion into optical glass fibre

Transmission loss increase of optical glass fibre caused by hydrogen diffusion is measured as a function of temperature and partial pressure of hydrogen gas. The activation energy of hydroxyl group formation from the diffused molecular hydrogen was found to be 15.9 kcal/mole. Also the hydroxyl absorption loss increase at 200°C was found to be proportional to the square root of the partial pressure of hydrogen gas.     

Millimeter and submillimeter-wave quasi-optical oscillator withmulti-elements

Multielement oscillators with a quasi-optical resonator are reported. The resonator consists of a Fabry-Perot cavity with a grooved mirror (grating) and a concave mirror. It is possible to mount solid-state devices (Gunn diode, GaAs MESFET, etc.) in the grooved mirror. The oscillator has the capability for power-combining of solid-state sources in the millimeter- and submillimeter-wave regions     

Metal Single-Atom Cocatalyst on Carbon Nitride for the Photocatalytic Hydrogen Evolution Reaction: Effects of Metal Species

Single-atom (SA) catalysts exhibit high activity in various reactions because there are no inactive internal atoms. Accordingly, SA cocatalysts are also an active research fields regarding photocatalytic hydrogen (H₂) evolution which can be generated by abundant water and sunlight. Herein, it is investigated whether 10 transition metal elements can work as an SA on graphitic carbon nitride (g-C₃N₄; i.e., gCN), a promising visible-light-driven photocatalyst. A method is established to prepare SA-loaded gCN at high loadings (weight of ≈3 wt.% for Cu, Ni, Pd, Pt, Rh, and Ru) by modulating the photoreduction power. Regarding Au and Ag, SAs are formed with difficulty without aggregation because of the low binding energy between gCN and the SA. An evaluation of the photocatalytic H₂-evolution activity of the prepared metal SA-loaded gCN reveals that Pd, Pt, and Rh SA-loaded gCN exhibits relatively high H₂-evolution efficiency per SA. Transient absorption spectroscopy and electrochemical measurements reveal the following: i) Pd SA-loaded gCN exhibits a particularly suitable electronic structure for proton adsorption and ii) therefore they exhibit the highest H₂-evolution efficiency per SA than other metal SA-loaded gCN. Finally, the 8.6 times higher H₂-evolution rate per active site of Pd SA is achieved than that of Pd-nanoparticles cocatalyst.     

A less invasive Emax estimation method for weaning fromcardiac assistance

The maximum elastance of the ventricle (E_max) is a strong candidate for a quantitative index used for determination of the timing of weaning the patient from a left ventricular assist device (LVAD). The authors present a new and less invasive method for deriving E_max of the left ventricle under the LVAD assistance. In this method (the CoP method), E_max can be calculated from two different end-systolic points which are produced by changing the drive phase of LVAD without any vascular clamping and any direct measurement of the left ventricular volume. Animal experiments indicated that the CoP method is useful when the measured left ventricular flow and pressure are employed. Moreover, a new technique for estimating the left ventricular flow was developed to make the CoP method less invasive without direct measurement of the flow. The technique could considerably improve the estimation accuracy of the flow in the co-pulsation mode in comparison with the previous one proposed by the authors. However, it has been revealed that the estimation accuracy of the left ventricular flow was not globally high enough to apply the CoP method to clinical cases in spite of its much less invasiveness     

Nonpolar AlGaN/GaN Metal–Insulator–Semiconductor Heterojunction Field-Effect Transistors With a Normally Off Operation

Nonpolar AlGaN/GaN metal–insulator–semiconductor-heterojunction field-effect transistors (MIS-HFETs) with a complete normally off operation have been demonstrated for the first time. To realize the normally off operation of the MIS-HFETs, a 2-nm-thick SiN (as an insulator) and GaN-based nonpolar epitaxial layers that are free from polarization charges are employed. We have found that a thicker nonpolar AlN buffer layer achieves a GaN layer with a narrower full width at half maximum of the X-ray rocking curve and higher electron mobility. The fabricated MIS gate structure on the AlN buffer layer successfully decreases the gate leakage current and enables a more positive gate bias of up to $+$4 V, which is advantageous to achieve a higher drain current. Moreover, the n-GaN capping layer between gate and ohmic electrodes helps to reduce parasitic resistance and suppress current collapse. The fabricated $a$-plane MIS-HFET exhibits a threshold voltage of $+$ 1.3 V with a high drain current of 112 mA/mm. The presented MIS-HFETs will be desirable in next-generation radio-frequency and power switching application fields.      

A compact thin-film-based all-pass device for the compensation of the in-band dispersion in FBG filters

Fiber Bragg grating (FBG)-based bandpass filters, while possessing close to ideal sharp rolloff characteristics, can suffer from a significant amount of in-band dispersion. Results concerning the compensation of the in-band dispersion of a typical 100-GHz FBG using two thin-film all-pass filters, each composed of two coupled-cavities packaged in a compact configuration, are presented. The total peak insertion loss of the compensation package is less than 2.5 dB.     

Transverse-junction-stripe GaAs-AlGaAs lasers for squeezed lightgeneration

We fabricated 850-nm GaAs transverse-junction-stripe (TJS) lasers by an improved metal-organic chemical vapor deposition (MOCVD) and double Zn diffusion process. The high V/III ratio used during the MOCVD growth significantly reduced the intermixing of GaAs active layer and AlGaAs cladding layers. The modified process realized good confinement for both carriers and photons and smaller saturable loss. We measured squeezing of -2.8 dB (-4.5 dB after correction for detection efficiency) at a pumping rate of I/I_th≈20 from these lasers, which is in close agreement with the theoretical limit. This squeezing remained unchanged under injection locking, indicating almost perfect conservation of the intensity noise correlation among the longitudinal modes. These TJS lasers had very small low-frequency 1/f noise