Cubic–Quartic Optical Solitons with Differential Group Delay for Kudryashov’s Model by Extended Trial Function

Journal of Communications Technology and Electronics - This paper implements mathematically rigorous extended trial function algorithm to address cubic–quartic optical solitons in...     

Manifold Preserving Features and Regression for Semantic Labelling in High Dimensional Images

Wireless Personal Communications - This paper proposes an combined method for manifold preservation and Subspace Eigenvectors(SE) based regression in high dimensional (HD) images. We studied...     

Transconductance and mobility of Si:B delta MOSFETs

Delta-doped MOSFETs have been fabricated in MBE-grown silicon using for the first time boron as the dopant within the delta layer. Current-voltage characteristics have been measured, and secondary ion mass spectrometry (SIMS) is used to confirm the location of the delta layer and the extent of layer broadening by diffusion during processing. Precise threshold voltages of the devices are difficult to determine since the devices (which all operate in depletion mode) take several volts to switch off. Transconductances of the devices have been measured, and it is shown how analysis of these results can yield estimates of the carrier mobility for transport along the delta layers despite the uncertainty in the threshold voltage. A clear transition is observed in the results which is attributed to the formation of a parasitic surface-channel field-effect transistor, providing conclusive evidence that the devices are conducting along a delta channel for part of the measured range of applied gate biases     

Slot antennas on photonic band gap crystals

The radiation patterns of a slot antenna placed on a photonic band gap crystal have been measured. We used a layer-by-layer photonic band gap crystal having a three-dimensional stop band between 12 and 15 GHz. The slot antenna radiation depends sensitively on the relative position and orientation of the slot in the surface unit cell of the photonic crystal. We have found configurations of the slot antenna with an increase of radiated power by 2-3 dB. The photonic band gap crystal can considerably improve the performance of a simple slot antenna     

The IEEE P1520 standards initiative for programmable networkinterfaces

This article discusses the need for standard software interfaces for programming of networks, specifically for service and signaling control, through programming interfaces. The objective is to enable the development of open signaling, control, and management applications as well as higher-level multimedia services on networks. The scope of this effort includes ATM switches, circuit switches, IP routers, and hybrid switches such as those that provide for fast switching of IP packets over an ATM backbone. The basic ideas represented herein are in the process of development as a standard for application programming interfaces for networks under IEEE Standards Project IEEE P1520     

Baselines for carbon emissions in the Indian and Chinese power sectors: Implications for international carbon trading

The study examines the dynamics of carbon emissions baselines of electricity generation in Indian states and Chinese provinces in the backdrop of ongoing electricity sector reforms in these countries. Two Indian states—Gujarat and Andhra Pradesh, and three Chinese provinces–Guangdong, Liaoning and Hubei have been chosen for detailed analysis to bring out regional variations that are not captured in aggregate country studies. The study finds that fuel mix is the main driver behind the trends exhibited by the carbon baselines in these five cases. The cases confirm that opportunities exist in the Indian and Chinese electricity sectors to lower carbon intensity mainly in the substitution of other fuels for coal and, to a lesser extent, adoption of more efficient and advanced coal-fired generation technology. Overall, the findings suggest that the electricity sectors in India and China are becoming friendlier to the global environment. Disaggregated analysis, detailed and careful industry analysis is essential to establishing a power sector carbon emissions baseline as a reference for CDM crediting. However, considering all the difficulties associated with the baseline issue, our case studies demonstrate that there is merit in examining alternate approaches that rely on more aggregated baselines.     

4D Printing of Shape Memory Materials for Textiles: Mechanism,Mathematical Modeling,and Challenges

Shape memory materials (SMMs) in 3D printing (3DP) technology garnered much attention due to their ability to respond to external stimuli, which direct this technology toward an emerging area of research, “4D printing (4DP) technology.” In contrast to classical 3D printed objects, the fourth dimension, time, allows printed objects to undergo significant changes in shape, size, or color when subjected to external stimuli. Highly precise and calibrated 4D materials, which can perform together to achieve robust 4D objects, are in great demand in various fields such as military applications, space suits, robotic systems, apparel, healthcare, sports, etc. This review, for the first time, to the best of the authors’ knowledge, focuses on recent advances in SMMs (e.g., polymers, metals, etc.) based wearable smart textiles and fashion goods. This review integrates the basic overview of 3DP technology, fabrication methods, the transition of 3DP to 4DP, the chemistry behind the fundamental working principles of 4D printed objects, materials selection for smart textiles and fashion goods. The central part summarizes the effect of major external stimuli on 4D textile materials followed by the major applications. Lastly, prospects and challenges are discussed, so that future researchers can continue the progress of this technology.     

Energy-efficient,EDFA lifetime-aware network planning along with virtualized elastic regenerator placement for IP-over-EON

Photonic Network Communications - In this paper, we focus on energy-efficient network planning (including traffic provisioning) along with optimal placement of virtualized elastic regenerators...     

An Effective Power-Aware At-Speed Test Methodology for IP Qualification and Characterization

Advanced nanometer technologies have led to a drastic increase in operational frequencies resulting in the performance of circuits becoming increasingly vulnerable to timing variations. The increasing process spread in advanced nanometer nodes poses considerable challenges in predicting post-fabrication silicon performance from timing models. Thus, there is a great need to qualify basic building structures on silicon in terms of critical parameters before they could be integrated within a complex System-on-Chip (SoC). The work of this paper presents a configurable circuit and an associated power-aware at-speed test methodology for the purpose of qualifying basic standard cells and complex IP structures to detect the presence of timing faults. Our design has been embedded within test-chips used for the development of the 28 nm Fully Depleted Silicon On Insulator (FD-SOI) technology node. The relevant silicon results and analysis validate the proposed power-aware test methodology for qualification and characterization of IPs and provide deeper insights for process improvements.     

Effect of voltage sweep direction on the performance evaluation of P3HT : PCBM solar cells

Investigations on the effect of direction of voltage sweeps, on the current density–voltage (J–V) characteristics in polymer bulk‐heterojunction solar cells, based on the blend of poly(3‐hexylthiophene) (P3HT) and phenyl [6,6] C₆₁ butyric acid methyl ester (PCBM), are reported with time. On the freshly prepared device, the direction of the voltage sweep did not have any effect; however, as the device started degrading, the change in direction of the voltage sweep resulted into different characteristics. Analysis beyond complete degradation, when all the photovoltaic parameters reduced to zero, revealed some interesting results. The J–V characteristics, measured with voltage sweep from −ve to +ve voltage, both in the dark and under illumination, were observed to pass through the second quadrant. On the other hand, with the change in the direction of voltage sweep, viz. from +ve to −ve voltage, the characteristics both in the dark and under illumination passed through the fourth quadrant. These results have been explained on the basis of polarization of the degraded active layer due to applied external voltage. This is an important effect and is observed to depend on the applied voltages during performance evaluation and becomes more prominent with time. This effect puts a question mark on the correctness of the method for calculation of the parameters of a degraded device. Studies on degradation of P3HT : PCBM solar cells showed that both the short circuit current density (J_sc) and the power conversion efficiency (η) decay exponentially, whereas the open circuit voltage (V_oc) decays almost linearly with time. Copyright © 2012 John Wiley & Sons, Ltd.