EBSP study of the annealing behavior of aluminum deformed by equal channel angular processing

Commercial purity aluminum (99.5%) was fabricated by equal channel angular pressing (ECAP) up to total accumulated strains of approx. 10. The annealing behavior of material deformed to total strains of approx. 1 and 10 was investigated, using heat treatments of 2 h at various temperatures from 100 to 500 °C. The microstructure of the annealed materials was characterized using the electron back-scatter pattern technique. A number of parameters were determined including the distribution and average values of both the boundary spacings and misorientations. For samples deformed to a total strain of 1, annealing resulted in discontinuous recrystallization. For samples deformed to a total strain of 10, annealing resulted in microstructures exhibiting characteristics of both uniform coarsening and, in a number of places, of discontinuous recrystallization. An attempt was made, based on the boundary spacing distributions, to separate these two components. The grain size after annealing was still however small, being just 6.4 μm after 2 h at 300 °C.     

Moving Least-Squares Differential Quadrature Method for Free Vibration of Antisymmetric Laminates

In this paper, the moving least-squares differential quadrature (MLSDQ) method is employed for free vibration of thick antisymmetric laminates based on the first-order shear deformation theory. The generalized displacements of the laminates are independently approximated with the centered moving least-squares (MLS) technique within each domain of influence. The MLS nodal shape functions and their partial derivatives are computed quickly through back-substitutions after only one LU decomposition. Subsequently, the weighting coefficients in the MLSDQ discretization are determined with the nodal partial derivatives of the MLS shape functions. The MLSDQ method combines the merits of both the differential quadrature and meshless methods which can be conveniently applied to complex domains and irregular discretizations without loss of implementation efficiency and numerical accuracy. The natural frequencies of the laminates with various edge conditions, ply angles, and shapes are calculated and compared with the existing solutions to study the numerical accuracy and stability of the MLSDQ method. Effects of support size, order of completeness of basis functions, and node irregularity on the numerical accuracy are investigated in detail.     

Wavelet-based Rayleigh background removal in MRI

Rayleigh distribution governs noise in 'no signal' regions of magnetic resonance magnitude images. Large areas of background noise in MRI images will seriously affect their effective utilisation. A new wavelet-based algorithm is presented that can work efficiently either as a standalone procedure or couple with existing denoising algorithms to significantly improve their effectiveness.     

Analysis of the mechanism of die soldering in aluminum die casting

A mechanism of soldering of an aluminum alloy die casting to a steel die is proposed. A soldering critical temperature is postulated, at which iron begins to react with aluminum to form an aluminum-rich liquid phase and solid intermetallic compounds. The liquid joins the die with the casting upon solidification. The critical temperature is determined by the elements in both the casting alloy and the die material and is equal to the solidus temperature of the resulting alloy. The critical temperature is used to predict the onset of die soldering, and the local liquid fraction is related to the soldering tendency. Experiments have been carried out to validate the concept and to determine the critical temperature for die soldering in an iron-aluminum system. Thermodynamic calculations are used to determine the critical temperature and soldering tendency for the cases of pure aluminum and a 380 alloy in a steel mold. Factors affecting the soldering tendency are discussed, and methods for reducing die soldering are suggested.     

Reliability investigation of 0.07-/spl mu/m InGaAs-InAlAs-InP HEMT MMICs with pseudomorphic In/sub 0.75/Ga/sub 0.25/As channel

The authors have investigated the reliability performance of G-band (183 GHz) monolithic microwave integrated circuit (MMIC) amplifiers fabricated using 0.07-/spl mu/m T-gate InGaAs-InAlAs-InP HEMTs with pseudomorphic In/sub 0.75/Ga/sub 0.25/As channel on 3-in wafers. Life test was performed at two temperatures (T/sub 1/ = 200 /spl deg/C and T/sub 2/ = 215 /spl deg/C), and the amplifiers were stressed at V/sub ds/ of 1 V and I/sub ds/ of 250 mA/mm in a N/sub 2/ ambient. The activation energy is as high as 1.7 eV, achieving a projected median-time-to-failure (MTTF) /spl ap/ 2 /spl times/ 10/sup 6/ h at a junction temperature of 125 /spl deg/C. MTTF was determined by 2-temperature constant current stress using /spl Delta/G/sub mp/ = -20% as the failure criteria. The difference of reliability performance between 0.07-/spl mu/m InGaAs-InAlAs-InP HEMT MMICs with pseudomorphic In/sub 0.75/Ga/sub 0.25/As channel and 0.1-/spl mu/m InGaAs-InAlAs-InP HEMT MMICs with In/sub 0.6/Ga/sub 0.4/As channel is also discussed. The achieved high-reliability result demonstrates a robust 0.07-/spl mu/m pseudomorphic InGaAs-InAlAs-InP HEMT MMICs production technology for G-band applications.     

Finite element piezothermoelasticity analysis and the active control of FGM plates with integrated piezoelectric sensors and actuators

 An efficient finite element model is presented for the static and dynamic piezothermoelastic analysis and control of FGM plates under temperature gradient environments using integrated piezoelectric sensor/actuator layers. The properties of an FGM plate are functionally graded in the thickness direction according to a volume fraction power law distribution. A constant displacement-cum-velocity feedback control algorithm that couples the direct and inverse piezoelectric effects is applied to provide active feedback control of the integrated FGM plate in a closed loop system. Numerical results for the static and dynamic control are presented for the FGM plate, which consists of zirconia and aluminum. The effects of the constituent volume fractions and the influence of feedback control gain on the static and dynamic responses of the FGM plates are examined. Received: 13 March 2002 / Accepted: 5 March 2003 The work described in this paper was supported by a grant awarded by the Research Grants Council of the Hong Kong Special Administrative Region, China (Project No. CityU 1024/01E).     

Verbal Representation and Therapeutic Change in Anaclitic and Introjective Inpatients.

This study examined the relation between changes in clinical functioning and changes in verbal expression in 81 seriously disturbed and treatment-resistant young adults seen in a comprehensive, psychoanalytically oriented inpatient treatment. Clinical functioning was evaluated with a battery of clinical and social measures. Verbal representations were assessed using computer-assisted scoring of Thematic Apperception Test responses. Changes in the frequency of verbal content and style in the narratives of these patients covaried with changes in clinical functioning. Significantly different covariations of verbal and clinical change, particularly differences in covariates of referential activity, were found for patients with anaclitic versus introjective personality configurations. The implications of these findings for understanding and treating severe psychopathology are discussed. (PsycINFO Database Record (c) 2010 APA, all rights reserved)     

PdO/Pd system equilibrium phase diagram under a gas mixture of oxygen and nitrogen

The thermal equilibrium decomposition properties of the PdO-Pd system under oxygen partial pressures ranging from 0.1 to 1.0 atm in a total combined pressure of oxygen and nitrogen of 1.0 atm were investigated by means of thermal-gravimetric analyses. The phase diagram of Pd-PdO over the range of oxygen/nitrogen gas concentration was established. The decomposition temperature of PdO to Pd was found to increase with the partial pressure of oxygen.     

InP D-HBT ICs for 40-Gb/s and higher bitrate lightwave transceivers

The combination of device speed (f/sub T/, f/sub max/ > 150 GHz) and breakdown voltage (V/sub bceo/ > 8 V) makes the double heterojunction bipolar InP-based transistor (D-HBT) an attractive technology to implement the most demanding analog functions of 40-Gb/s transceivers. This is illustrated by the performance of a number of analog circuits realized in an InP D-HBT technology with an 1.2- or 1.6-/spl mu/m-wide emitter finger: a low phase noise push-push voltage-controlled oscillator with -7-dBm output power at 146 GHz, a 40-GHz bandwidth and low-jitter 40-Gb/s limiting amplifier, a lumped 40-Gb/s limiting driver amplifier with 4.5-V/sub pp/ differential output swing, a distributed 40-Gb/s driver amplifier with 6-V/sub pp/ differential output swing, and a number of distributed preamplifiers with up to 1.3-THz gain-bandwidth product.