Survival of Yersinia enterocolitica and Escherichia coli in spring water

Survival of pure and mixed cultures of Yersinia enterocolitica and Escherichia coli in sterile spring water stored at 4 degrees C was evaluated. Y. enterocolitica increased two or three logs during the first 3 weeks of incubation, and at the end of 64 weeks viable cells in numbers corresponding to the initial inoculum level were still detectable. However, after 1 week of incubation, the number of E. coli in water started to decrease and in 13 weeks time no E. coli was detected. More rapid decrease of E. coli was observed in mixed cultures.     

Simulation of the capacitance-voltage characteristics of a ferroelectric material

Semiconductors - The parameters of a ferroelectric material without initial polarization are simulated. The ferroelectric material is doped with a shallow-level impurity. One of the contacts is...     

Personal spaces — ePerSpace

This paper describes the ePerSpace research project which aims to significantly increase user acceptance of networked audiovisual systems and applications at home and virtually anywhere by enabling innovative interoperable value-added personalised networked services and applications. Moreover, it aims to develop an open architecture and a framework that will significantly increase the speed of developing novel value-added personalised services by reusing well-defined system components with open APIs. The structure of the paper follows the methodology of the project. It starts with a vision of future personalised services from the users’ perspective by developing five scenarios. These scenarios are then used to extract the requirements of the personalisation framework which is then described in terms of its personalisation, service management, digital home environment management and content adaptation capabilities.     

Highly integrated direct conversion receiver for GSM/GPRS/EDGE with on-chip 84-dB dynamic range continuous-time /spl Sigma//spl Delta/ ADC

This paper describes a highly digitized direct conversion receiver of a single-chip quadruple-band RF transceiver that meets GSM/GPRS and EDGE requirements. The chip uses an advanced 0.25-/spl mu/m BiCMOS technology. The I and Q on-chip fifth-order single-bit continuous-time sigma-delta (/spl Sigma//spl Delta/) ADC has 84-dB dynamic range over a total bandwidth of /spl plusmn/135 kHz for an active area of 0.4 mm/sup 2/. Hence, most of the channel filtering is realized in a CMOS IC where digital processing is achieved at a lower cost. The systematic analysis of dc offset at each stage of the design enables to perform the dc offset cancellation loop in the digital domain as well. The receiver operates at 2.7 V with a current consumption of 75 mA. A first-order substrate coupling analysis enables to optimize the floor plan strategy. As a result, the receiver has an area of 1.8 mm/sup 2/.     

High spatial order finite element method to solve Maxwell's equations in time domain

This paper presents a finite element method with high spatial order for solving the Maxwell equations in the time domain. In the first part, we provide the mathematical background of the method. Then, we discuss the advantages of the new scheme compared to a classical finite-difference time-domain (FDTD) method. Several examples show the advantages of using the new method for different kinds of problems. Comparisons in terms of accuracy and CPU time between this method, the FDTD and the finite-volume time-domain methods are given as well.     

MOS RF reliability subject to dynamic voltage stress-modeling and analysis

Dynamic stress on MOSFETs with 900-MHz inverter-like waveforms as well as static (or dc) stress were evaluated experimentally. It showed that the degradation due to dynamic stress is less than that of dc stress for our test transistors. A compact model is used to evaluate the degradation in radio frequency performances, such as transconductance, cutoff frequency, linearity, and noise figure. A class-AB power amplifier is presented as an example to demonstrate the effect of dynamic stress on RF circuit performance.