A 0.1-μm delta-doped MOSFET fabricated with post-low-energyimplanting selective epitaxy

A simple fabrication technology for delta-doped MOSFETs, named post-low-energy implanting selective epitaxy (PLISE) is presented. The PLISE technology needs no additional photo-lithography mask, deposition step or etching step even for CMOS devices. The only additional step is growing undoped epitaxial channel layers by UHV-CVD after the channel implantation. With this technology, delta-doped NMOSFETs with 0.1-μm gate length were successfully fabricated. By optimizing the epi-layer thickness and the channel doping level, short-channel effects are suppressed enough to achieve 0.1-μm gate length. Moreover, the junction capacitance at zero bias is reduced by 50%     

A sensorless brushless dc motor system

This paper describes a brushless dc motor system without position or speed sensor. The brushless motor consists of a permanent magnet synchronous motor and a voltage-source inverter capable of controlling the amplitude and frequency of voltage. The rectangular-shaped stator current with a conducting interval of 120° (electrical) is controlled to be in phase with the trapezoidal back electromotive force. This results in producing maximum torque. Variable speed is achieved by adjusting the average motor voltage similarly to chopper control of dc motors. In this paper, two sensorless position detecting methods, i.e., an “indirect method” suited for the lower-speed range and a “direct method” suited for the higher-speed range are proposed. The combination of the two makes it possible to detect the rotor position over a wide-speed range. Furthermore, a speed-sen-sorless PLL control is proposed in applying the principle of the direct method. Experimental results obtained from a prototype brushless dc motor are shown to confirm the validity of the sensorless drive. The starting procedure of the motor also is discussed because it is impossible to detect the rotor position at a standstill.     

Effect of rapid sample cooling on efficiency of multiple impurity-atom doping

Shallow and efficient doping of wide band-gap semiconductors has remained one of yet unresolved problems to date. A possible solution to this problem is doping with complexes of a few impurity atoms at a quasi-equilibrium state, which is introduced by controlled cooling of a sample after doping. In this work, (1) we first define a global and quasi-equilibria of our interest based on a simple thermodynamic model for a doped crystal, and then (2) we discuss how the cooling rate affects the probability of impurity-complex formation at a quasi-equilibrium as defined. Our main message is that one should design impurity complexes as small in size as possible which have as large a binding energy as possible. This is a required condition for complex designs when it is difficult to tune the cooling rate.     

The temperature dependence of luminescence from a long-lasting phosphor exposed to ionizing radiation

The temperature dependence of luminescence from a long-lasting phosphor (LLP), SrAl₂O₄ : Eu²⁺,Dy³⁺, exposed to ionizing radiation has been measured to understand the LLP luminescence mechanism. Evaluation of the decay constants of the LLP exposed to -, β- or γ-rays at temperatures from 200 to 390 K showed that the decay constant is divided into four components ranging from 10⁻⁴ to 10⁻¹ s⁻¹ with activation energies of 0.02–0.35 eV.

Total luminous intensity from the LLP with changing irradiation temperature has its maximum value around the room temperature. Irradiation at elevated temperature (390 K) has the total luminescence pattern with monotonous decrease as temperature rises. As a result of evaluating the temperature dependence of luminescence, the luminescence mechanism is considered as follows:

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Fiber-optic devices for local area network application

Recent developments on fiber-optic devices are reviewed from the local area network (LAN) application viewpoint. Future technical trends are also discussed, along with current research activities. In local area network systems, low device cost and easy maintenance or maintenance-free devices are especially required. Light sources and photodetectors suitable for the systems are described. InGaAsP/InP light emitting diodes can cover a broad application field, up to a gigabits per second super high-speed network region. Optical passive devices, which include branching couplers, switches and connectors, are mentioned as essential components. Compact transmitter/receiver module technology is a key factor in realizing optical-fiber local area network systems. An example of 200-Mbit/s transmitter/receiver module is reported.     

Structure of microporous polypropylene sheets containing CaCO3 filler

The microporous polypropylene sheets were prepared by biaxially stretching polypropylene sheets containing CaCO₃ filler (particle size, 0.08–3.0 μm), when the CaCO₃ filler content was 59% by weight and the stretching ratio was 2.8 × 1.8. The microstructure of the sheets were investigated in relation to the CaCO₃ particle size by a N₂ gas permeation method. (1) Effective porosity increases with decreasing mean particle size of filler. (2) The tortuosity factor of the pore is in the range of 25–40 and becomes relatively smaller with decreasing mean particle size of filler. (3) The equivalent pore size becomes relatively smaller with decreasing mean particle size of filler.     

Electron acceleration by single and double laser beams

The longitudinal electric field of single and double Gaussian laser beams are used to accelerate electrons. The longitudinal field of the single beam is concentrated on the axis and is favourable for acceleration. A set of two beams is considered. Beams run parallel, collinearly, overlap partially and have a phase difference iπ in between. As a result, the transverse components of fields cancel each other while the longitudinal components are double-fold. In both schemes, the electrons are accelerated in lengths of the Rayleigh range, which is common to the plasma-based accelerators.     

Effect of Forming Pressure on the Internal Structure of Alumina Green Bodies Examined with Immersion Liquid Technique

Green bodies prepared by compaction of alumina granules were made transparent by an immersion liquid technique, and the internal structure was characterized with an optical microscope to study the effect of forming pressure on the internal structure. Clear images obtained by the technique provide more detailed information than other existing methods for structures ranging from one to tens of micrometers. Intergranular pores were present between unfractured granules. Their sizes and concentration tended to decrease with increasing forming pressure. However, pores were clearly present even in the green body prepared at 600 MPa. A rod- and needlelike feature was also found and was concluded to correspond to a high-density region. The significance of large pores and high-density regions on processing as well as the details of the technique is discussed.