Role of disorder-order transformation in consolidation of ceramics

The ordering of stacking-disordered silicon carbide prepared from the elements by high energy ball milling was investigated during sintering. A sharp increase in density in the temperature region 1700–1800°C was associated with a decrease in the disorder. Samples which had low disorder density showed a more continuous sintering behavior with temperature. Highly dense (up to 99% relative density) SiC can be obtained at 1900°C under a pressure of 70 MPa with no hold time. Similar results were observed for structurally disordered carbon with 10 at% of boron. The sintering behavior exhibited an abrupt density increase in the narrow temperature region of 1450–1600°C and was associated with disorder-order transformation.     

Encapsulation of radioactive metals inside multilayered polyhedral shells of carbon as a barrier to radionuclide release

A carbon nanoencapsulate has a polyhedral outer shell of nested, concentric layers of carbon. The shell defines an internal cavity where a metal is encapsulated. Although the rare-earth carbides readily hydrolyze in moist air, the carbides in these carbon shells did not degrade after exposure to air for considerable lengths of time. This means that the carbide particle is physically enclosed within the carbon cavity completely, and the cavity protects it perfectly against attack of water molecules. Considering intrinsic chemical stability of carbon under oxygen free condition, this structure may be a perfect barrier to extremely long-term release of radionuclides. Because encapsulation of LaC₂ within carbon nanoparticles increased drastically from by-product to major product, it would be possible to find the optimized condition that complete encapsulation is achieved. Intrinsic stability of carbon and carbon coated waste nanoparticles may provide an improved barrier to radionuclide release by groundwater.     

Improving withstand voltage by roughening the surface of an insulating spacer used in vacuum

This paper describes a simple and reliable method of improving the surface insulation strength of a spacer used in vacuum. The method is to roughen the spacer surface to an average roughness R/sub a/ higher than 1 or 2 /spl mu/m. The material of the spacer examined is SiO/sub 2/, PMMA, PTFE or Al/sub 2/O/sub 3/ and their shape is a right cylinder with 10 mm in height and 54 mm in diameter. The spacer is subjected to a ramped DC voltage and its surface charging is observed by using an electrostatic probe embedded in the cathode. It has been found that R/sub a/ decisively affects the charging, which decreases as R/sub a/ increases. Increasing R/sub a/ larger than about 2 /spl mu/m suppresses the charging until a higher applied voltage is reached, thus improving the insulation property.     

High-efficiency photon-number detection for quantum information processing

The visible light photon counter (VLPC) features high quantum efficiency (QE) and low pulse height dispersion. These properties make it ideal for efficient photon-number state detection. The ability to perform efficient photon-number state detection is important in many quantum information processing applications, including recent proposals for performing quantum computation with linear optical elements. In this paper, we investigate the unique capabilities of the VLPC. The efficiency of the detector and cryogenic system is measured at 543 nm wavelengths to be 85%. A picosecond pulsed laser is then used to excite the detector with pulses having average photon numbers ranging from 3-5. The output of the VLPC is used to discriminate photon numbers in a pulse. The error probability for number state discrimination is an increasing function of the number of photons, due to buildup of multiplication noise. This puts an ultimate limit on the ability of the VLPC to do number state detection. For many applications, it is sufficient to discriminate between 1 and more than one detected photon. The VLPC can do this with 99% accuracy.     

Frequency range extension of actively mode-locked lasers integratedwith electroabsorption modulators using chirped gratings

We have fabricated actively mode-locked lasers integrated with electroabsorption modulators and chirped gratings. A chirped grating with a large chirp rate of 1.45 Å/μm can be realized by using multiphase-shifted patterns. Short pulses of 4-6 ps were generated over a wide frequency range from 18.9-19.8 GHz. We observed jumps in the wavelength during detuning. These jumps arise from multiple lobes in the reflectivity spectrum. It is found that the wavelength jumps cause increases in the intensity noise. We showed that by reducing the grating length from 150 to 100 μm the sidelobes were suppressed and the detuning frequency range of over 1% could be realized. A smaller pulsewidth was obtained for the negatively-chirped gratings when compared to the positively chirped gratings     

Narrow-beam divergence 1.3-μm multiple-quantum-well laser diodeswith monolithically integrated tapered thickness waveguide

This paper describes the optimum design, fabrication, and performance of a 1.3-μm multiple-quantum-well (MQW) laser diode monolithically integrated with a tapered thickness spot-size transformer. The dependence of the lasing characteristics on the thickness distribution of the core layer and on the current injection profile of the device were analyzed. This integrated laser with its optimized structure performed at a low threshold current of 22.2 mA, even at 85°C. The integrated spot-size transformer effectively reduced the lateral and vertical far-field FWHM's to 8° and 9°, respectively. A very long lifetime of over 1×10⁵ h was estimated at 85°C and 8 mW under CW operation     

Effect of O2 on NO removal by ammonia radical injection using one-cycle sinusoidal power source

NO reduction experiment was performed by injecting ammonia radicals, which were externally generated by flowing the NH₃ gas diluted with Ar gas through a dielectric barrier discharge with a one-cycle sinusoidal-wave power source. The discharge was intermittently formed between coaxial cylindrical electrodes with a space of 1.5 mm at an applied peak-to-peak voltage of 3-25 kV. The generated radicals were injected into simulation gas (NO/O₂/N₂). The simulation gas contained 0-5.6% O₂, and the effect of O₂ on NO_x removal was discussed. The minimum reaction temperature for NO reduction was low when simulation gas contained O₂. High O₂ concentration (O₂=5.6%) in simulation gas, high repetition rate to NH₃, and high applied power to NH₃ decreased NO removal efficiency.     

The role of sputter etching and annealing processes on the formation of β-FeSi2 thin films

For formation of β-FeSi₂ using ion beam sputter deposition (IBSD) method, sputter etching (SE) followed by thermal annealing is effective substrate treatment to obtain highly (100)-oriented β-FeSi₂ on Si(100). However, the best condition of these treatments are not yet known. In this work, the effect of SE together with annealing process on the orientation of the film is investigated. Prior to the deposition of Fe, the substrate is irradiated by Ne⁺ ions with various energy and fluence followed by thermal annealing at 1073 K for 60 min. The overall results show the most suitable SE condition using Ne⁺ ion on IBSD method is the energy of 1 keV with the fluence of 3.0×10¹⁹ ions /m².     

Development of an alpha/beta/gamma detector for radiation monitoring

For radiation monitoring at the site of nuclear power plant accidents such as Fukushima Daiichi, radiation detectors not only for gamma photons but also for alpha and beta particles are needed because some nuclear fission products emit beta particles and gamma photons and some nuclear fuels contain plutonium that emits alpha particles. We developed a radiation detector that can simultaneously monitor alpha and beta particles and gamma photons for radiation monitoring. The detector consists of three-layered scintillators optically coupled to each other and coupled to a photomultiplier tube. The first layer, which is made of a thin plastic scintillator (decay time: 2.4 ns), detects alpha particles. The second layer, which is made of a thin Gd(2)SiO(5) (GSO) scintillator with 1.5 mol.% Ce (decay time: 35 ns), detects beta particles. The third layer made of a thin GSO scintillator with 0.4 mol.% Ce (decay time: 70 ns) detects gamma photons. By using pulse shape discrimination, the count rates of these layers can be separated. With individual irradiation of alpha and beta particles and gamma photons, the count rate of the first layer represented the alpha particles, the second layer represented the beta particles, and the third layer represented the gamma photons. Even with simultaneous irradiation of the alpha and beta particles and the gamma photons, these three types of radiation can be individually monitored using correction for the gamma detection efficiency of the second and third layers. Our developed alpha, beta, and gamma detector is simple and will be useful for radiation monitoring, especially at nuclear power plant accident sites or other applications where the simultaneous measurements of alpha and beta particles and gamma photons are required.     

Measurement of IGSCC depth by SAFT-UT

In order to examine the ability of SAFT-UT of measuring the IGSCC depth, two preparatory experiments on artificial defects and one on a real IGSCC were performed.In the first, the capabilities of SAFT-UT of determining crack depth were assessed for an artificial defect in a carbon steel. It was found that crack depth could be measured by obtaining the crack tip images.In the second, influences of large grain size were investigated by testing a slot made by EDM in the weld heat affected zone of austenitic stainless steel piping. It was found that a narrow beam spread probe, i.e., a large F number probe, was better for measurement of crack depth in an austenitic stainless steel.Finally, a real IGSCC was tested as introduced in two different test blocks. The positions of tip and the opening of the IGSCC deduced by SAFT-UT were in a fairly good agreement with those revealed afterwards.