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41.
We have compared experimentally the transmission performance of return-to-zero differential phase-shift keying (RZ-DPSK) with RZ-ON-OFF keying (OOK), nonreturn-to-zero differential phase-shift keying (NRZ-DPSK), and NRZ-OOK for 100/spl times/10-Gb/s transmission with a spectral efficiency of 0.22 b/s/Hz over transoceanic distances. The Q degradation of the RZ-DPSK after transmission over 9180 km was 3 dB greater than that of RZ-OOK. The experimental results clearly showed the major cause of degradation for DPSK is not cross-phase modulation but self-phase modulation. The calculated nonlinear phase noise, i.e., the Gordon-Mollenauer effect, agreed with the experimental results. A distributed-Raman-amplifier assisted erbium-doped-fiber-amplified transmission line acted well in reducing the nonlinear phase noise.  相似文献   
42.
Planar defects, like anti-phase boundaries (APBs) and stacking faults (SFs), are reduced by growing 3C-SiC on undulant-Si whose entire surface is covered with countered slopes oriented in the [1 1 0] and directions. During the initial 3C-SiC growth, APBs are eliminated on each slope of an undulation. Then, one kind of SF self-vanishes. However, another kind of SF remains on the 3C-SiC surface, although its density is gradually reduced with increasing SiC thickness by combining with a counter-SF. The leakage current of a pn diode fabricated homo-epitaxially on 3C-SiC is roughly proportional to the SF density before homo-epitaxial growth. The viability of 3C-SiC grown on undulant-Si for semiconductor devices is discussed by reviewing recent reports on various MOS-FETs using it as the substrate. The key issue in the fabrication of a MOS-FET as a power-switching device operated at high-voltage is to reduce the leakage-current at the pn junction, thereby eliminating SFs.  相似文献   
43.
An estimate has been made of the feasibility of a metallurgical purification process, the NEDO (New Energy and Industrial Technology Development Organization) melt‐purification process, for manufacturing solar‐grade silicon from metallurgical‐grade silicon. Equipment has been developed to pilot manufacturing plant scale. The system comprises an electron‐beam furnace for phosphorus removal and a plasma furnace for boron removal. Each furnace has a mold for directional solidification to remove metallic impurities. The concentration of each impurity in the silicon ingot purified through the whole process satisfied the solar‐grade level. The Solar‐grade silicon produced showed p‐type polarity and resistivity within the range 0·5–1·5 Ω cm. Copyright © 2001 John Wiley & Sons, Ltd.  相似文献   
44.
A very large channel-count arrayed waveguide grating (AWG) filter with more than 1000 channels is described. It was achieved by cascading a 1-THz-spaced flat-top 1×10 AWG as a primary filter and ten 10-GHz-spaced 1×160 AWGs as secondary filters in a tandem configuration. We achieved good adjacent and accumulated channel crosstalk values ranging from -32 to -25 dB and from -24 and -18 dB, respectively  相似文献   
45.
It is clearly demonstrated that source/drain (S/D) elevation is remarkably effective in suppressing the short channel effect against the shrinkage of gate sidewall spacers in MOSFETs. Even if the gate sidewall width is reduced to as very thin as 15 nm, the short channel effect is effectively suppressed by means of the highly elevated S/D regions (80 nm in the present case), though the characteristics of conventional MOSFETs are drastically degraded. This result is explained in terms of the fact that the serious influence due to the deep S/D implantation is suppressed by the formation of a quasi-single-drain configuration. Furthermore, the parasitic S/D resistance decrease, which will bring about drivability enhancement, was observed for reduction in the sidewall width. These favorable experimental results may indicate the definite necessity of elevated S/D engineering for future ultrashort MOSFETs  相似文献   
46.
A new advantage of an elevated source/drain (S/D) configuration to improve MOSFET characteristics is presented. By adopting pocket implantation into an elevated S/D structure which was formed by Si selective epitaxial growth and gate sidewall removal, we demonstrate that the parasitic junction capacitance as well as the junction leakage was significantly reduced for an NMOSFET while maintaining its good short channel characteristics. These successful results are attributed to the modification of the boron impurity profile in the deep S/D regions. The capacitance reduction rate, furthermore, was more remarkable as the pocket dose was further increased. This means that the present self-aligned pocket implantation is very promising for future MOSFETs with a very short gate length, where high pocket dosage will be required to suppress the short channel effect  相似文献   
47.
Asakawa  S. Abe  Y. Nagase  R. 《Electronics letters》2003,39(7):611-612
A novel super-multi-fibre planar lightwave circuit (PLC) connector, designed to connect tens of optical fibres and a PLC for super-multichannel PLC-based optical modules with a receptacle interface, is proposed. This connector employs an angled connection instead of a PC connection. A 0.127 mm pitch 32-fibre connector is also demonstrated, which exhibits low connection and high return losses.  相似文献   
48.
A new space-time turbo equalization algorithm is derived for frequency-selective multiple-input-multiple-output (MIMO) channels with unknown interference. The algorithm is an extension of our proposed MIMO equalization algorithm , which performs joint channel estimation, multiple users' signal detection, and decoding, all in an iterative manner. This paper's proposed algorithm uses estimates of the correlation matrix of composite unknown interference-plus-noise components to suppress the unknown interference while effectively separating multiple users' signals to be detected (referred to as "known user" later). The correlation matrix of the composite unknown interference-plus-noise components can be estimated by time averaging the instantaneous empirical correlation matrix over the training period. Since the iterative channel estimation yields better channel estimates as more iterations are performed, thereby the estimate of the correlation matrix of the unknown interference-plus-noise components also becomes more accurate. This results in better signal detection performances, even in the presence of unknown interferers. A series of computer simulations show that this paper's proposed algorithm can properly separate known users' signals while suppressing unknown interference.  相似文献   
49.
A combination of macroscale solidification simulation and phase-field calculation is employed to predict the volume fraction of the eutectic phase in Sn-4.0 mass% Ag-XCu solder alloys (X=0.5–1.1 mass%). The solidification simulation incorporates the cooling rate in the phase-field simulation. We assume the residual liquid solidifies as eutectic phase when the driving force for the nucleation of Cu6Sn5 amounts to a critical value, which is determined based on the experimental data. Though the calculation results depend on the experimental data, the obtained fractions are about 40% for 0.5 mass% Cu and more than 90% for 1.1 mass% Cu alloy, which shows good agreement with the experimental data.  相似文献   
50.
An FM-CW radar system was applied to detect a human body buried in a very wet snowpack. This radar uses the L-band microwave frequency with a maximum output power of 100 mW, and utilizes digital signal processing techniques. Field experiments were carried out to detect and map a human body embedded at a depth of 125 cm in a natural snowpack. The radar is shown to have a potential ability to detect avalanche victims, indicating that it may become a tool for snow rescuer operations  相似文献   
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