Requirement on carrier concentration and geometry of Schottky-electrode-triggered Gunn device

From the consideration of a stable domain I/V characteristic and of a practical Schottky electrode bias, it has been made clear that there are requirements for carrier concentration and geometry available for a Schottky-electrode-triggered Gunn device. Numerical examples are given for various carrier concentrations and geometries.     

Gunn-effect memory device using the charge accumulation on a Schottky-trigger electrode

A new Gunn-effect memory device using the charge accumulation on a Schottky-trigger electrode is proposed and its operation demonstrated with a monolithically fabricated device. Theoretical calculations show that the device could be modified into a static memory device if the Schottky electrode potential is chosen as the output.     

Identification of unknown peaks in foods during residual pesticide analysis

Four unknown peaks were detected in GC chromatograms during analysis of organophosphorus pesticide residues in foods. They were identified by using GC/MS as triethyl phosphate (TEP), tributyl phosphate (TBP), diphenyl 2-ethylhexyl phosphate (DPEHP) and N-ethyltoluenesulfoneamide (NETSA), which are used as plasticizers or flame retardants in food packaging. These chemical substances were detected in the range of tr. (below 0.01 microg/g) to 11 micro/g from 29 samples, and they were also detected in the packaging. It was supposed that they were transferred to the foods from the packaging. Furthermore, they were detected in some cereals and cereal products which contain fat and had been preserved for a long time.     

Analysis of residual solvents in natural flavorings by headspace GC using the standard addition method

Headspace GC using the standard addition method has been developed for the simultaneous determination of organic solvents in natural flavorings. The procedure can be outlined as follows: an aliquot of the sample is transferred to a 10 mL vial. To each vial, a DMSO solution containing solvents at different concentrations is added as the standard solution. The vials are kept at 50 degrees C (for automatic injection) or 40 degrees C (for hand-operated injection) for 40 minutes. One mL of the vapor phase in each vial is injected into a gas chromatograph equipped with an Aquatic-2 column (0.25 mm i.d. x 60 m). To evaluate this method, we conducted a performance study in collaboration with 10 laboratories, using ginger oleoresin. We analyzed 6 solvents (methanol, 2-propanol, acetone, dichloromethane, hexane, and 1,1,2-trichloroethene) for which the maximum residue limits are established in Japan's Specifications and Standards for Food Additives. Methanol and acetone existed in the ginger oleoresin, so only the other that four kinds of solvents were added to it. Eight of the laboratories used automatic injection, while the remaining two used hand-operated injection. Statistical analyses were conducted on the data obtained from the 8 laboratories. Repeatability standard deviations (RSDr) ranged from 4.3 to 11.4%, and reproducibility standard deviations (RSDR) ranged from 8.4 to 19.0%.     

基于低聚酰亚胺含氮介孔碳材料的制备

以低聚酰亚胺为氮源前驱体、交联酚醛树脂为碳源、嵌段共聚物为软模板剂,通过相分离自组装、交联和高温锻烧处理制备了新型高规整含氮介孔碳材料,并用FT-IR、SEM、TEM、热重分析和小角X光散射等测试方法表征介孔碳材料的组成与结构.结果表明,处理温度达350℃时嵌段共聚物模板可被成功移除,进而形成多孔结构;温度达600℃时体系完全碳化,可得到高规整的多孔含氮碳材料.通过调节体系中氮源、碳源及模板剂的相对比例可实现形貌由立方结构向柱状和层状结构的过渡,进而实现对含氮介孔材料形貌的有效调控.     

Dynamic dissolved oxygen concentration control for enhancing the formation rate of torpedo-stage embryos in carrot somatic embryo culture

In utilizing somatic embryogenesis for transplant production, torpedo-stage embryos are harvested. In order to enhance the formation rate of torpedo-stage embryos to total embryos of all developmental stages in the culture at the time of harvest, a dynamic dissolved oxygen concentration (DO) control algorithm is proposed. The algorithm is based on the difference in developmental response of somatic embryogenesis to DO level depending on developmental stages, and the culture period was divided into three phases of different DO levels. The timing of the phase change was determined based on the formation rate of the embryos in each developmental stage in the suspension assessed by noninvasive monitoring of the culture. The induction of carrot (Daucus carroa L.) somatic embryogenesis resulted in doubled formation rate of torpedo-stage embryos by dynamic DO control compared to the 20% oxygen gas aeration, and 1.4 times higher formation rate compared to 6% oxygen gas aeration, while the total number of embryos did not differ among DO treatments. Plant conversion rate of torpedo-stage embryos cultured by the dynamic DO control was 70%, and was approximately the same as that in the control cultures. The relations between variations of medium pH and somatic embryogenesis were also analyzed.     

Route diversity with hitless path switching

A route diversity `hitless' protection switching scheme is proposed that is free from hit loss even for unpredictable system failures. Freely switching between the working and protection paths improves the signal quality at the system output because the system automatically selects the no-error frame     

An analysis of the kink phenomena in InAlAs/InGaAs HEMT's usingtwo-dimensional device simulation

Kink phenomena in InAlAs/InGaAs HEMTs are investigated using a two-dimensional (2-D) device simulation that takes into account impact ionization, including nonlocal field effects, and the surface states in a side-etched region at the gate periphery. The simulation model enables us to represent the kink, and it is found that the accumulation of holes generated by the impact ionization has the channel electron density in the side-etched region increase at the bias point where kink appears. When the electron density in the side-etched region is small, the hole accumulation causes a significant increase in that electron density, resulting in a large kink. The simulation results suggest a model in which the kink is described in terms of the modification of the parasitic source resistance induced by the hole accumulation. This model implies a way to eliminate the kink, that is, keeping the electron density in the side-etched region high