An analysis of the kink phenomena in InAlAs/InGaAs HEMT's usingtwo-dimensional device simulation

Kink phenomena in InAlAs/InGaAs HEMTs are investigated using a two-dimensional (2-D) device simulation that takes into account impact ionization, including nonlocal field effects, and the surface states in a side-etched region at the gate periphery. The simulation model enables us to represent the kink, and it is found that the accumulation of holes generated by the impact ionization has the channel electron density in the side-etched region increase at the bias point where kink appears. When the electron density in the side-etched region is small, the hole accumulation causes a significant increase in that electron density, resulting in a large kink. The simulation results suggest a model in which the kink is described in terms of the modification of the parasitic source resistance induced by the hole accumulation. This model implies a way to eliminate the kink, that is, keeping the electron density in the side-etched region high     

Expression of cyclin-dependent kinase 5 and associated cyclins in Leydig and Sertoli cells of the testis

Sixty patients with a sudden onset of motor disability were assessed for illness behavior and depression. In 30 of the patients, etiology was attributed to a definite structural lesion. The remaining 30 patients were diagnosed as having conversion disorder. The Illness Behaviour Questionnaire (IBQ) and the Hamilton Rating Depression Scale (HRDS) were used as instruments for assessment. The mean HRDS score was significantly higher in the conversion group, indicating a higher degree of affective disease in these patients. According to the results of the IBQ, the patients with conversion disorder showed a higher degree of irritability, disease conviction, and phobic preoccupation, and also, to a greater extent, rejected psychological explanations for their symptoms. Denial was high in both patient groups, coexisting with affective symptoms in the conversion patients but not in the neurological patients. Although valuable information could be extracted from the IBQ, it was not found to be a reliable instrument for distinguishing between psychogenic and organic causes of motor disability.     

Representation of the displacement rate between the loading points in terms of applied stress and temperature and its relation to creep crack growth rate, C, P and Q parameters

The displacement rate between the loading points in SUS 304 stainless steel has been experimentally obtained under several applied gross stress and high temperatures, and the equation for has been obtained experimentally as a function of applied gross stress σ_g and absolute temperature T. Then, the relation of δ to creep crack growth rate da/dt was clearly shown in terms of equation. Furthermore, the relation has been clarified between the energy rate line integral C^* as affected by , and P parameter. In this way, it is clearly shown why log (da/dt) data plotted against log C^* deviates in some systematic trend with the increase of temperature and gross stress, respectively, whereas log da/dt vs the P parameter becomes exactly the same and one straight line independent of temperature and gross stress. The discussion is made on that the similar relation will hold between the evaluation by C^* and that by _gQ or by Q^*.     

Three mechanisms determining short-channel effects infully-depleted SOI MOSFETs

Mechanisms determining short-channel effects (SCE) in fully-depleted (FD) SOI MOSFETs are clarified based on experimental results of threshold voltage (V_T) dependence upon gate length, and analysis using a two-dimensional (2-D) device simulator. Drain-induced barrier lowering (DIBL) effect is a well known mechanism which determines the SCE in conventional bulk MOSFETs. In FDMOSFETs, two more peculiar and important mechanisms are found out, i.e., the accumulation of majority carriers in the body region generated by impact ionization, and the DIBL effect on the barrier height for majority carriers at the edge of the source near the bottom of the body. Due to these peculiar mechanisms, V_T dependence upon gate length in the short-channel region is weakened. It is also shown that floating body effects, the scatter of V_T, and transient phenomena are suppressed due to the SCE peculiar to FD MOSFETs     

The Decomposition of a Quasi-Uniform Association Model and its Application to the Analysis of British Occupational Mobility Table Data

For the well-known British occupational mobility data describing the cross-classification of father’s and son’s occupational status categories, the quasi-uniform association (QU) model considered by Goodman (1979a, 1981b) fits well. This paper gives decompositions for the QU model and also shows that for the British data one of the decomposed models is preferable to the QU model though the QU model has a good fit.

     

Finite element method for unbounded field problems and application to two-dimensional taper

Treatment of the finite element method for an unbounded field problem was proposed by McDonald and Wexler in 1972. Their method is superior to others, because it can exclude the singularities of Green's functions. This paper explains the treatment of the method in our 1979 letter which had some revisions of McDonald and Wexler's and calculated the time-harmonic field problems. Examples presented are electromagnetic fields of two-dimensional tapers which are open-ended. Electromagnetic waves propagate in the taper and radiate from the taper to free space. In this case, the exact solutions for radiation from tapers are not available because of the complicated shape, and so the finite element method is useful in solving these problems. Electromagnetic fields of tapers involving dielectric slabs are also calculated as examples of inhomogeneous problems.     

The Second Phase Construction of Kansai International Airport Considering the Large and Long-Term Settlement of the Clay Deposits

Kansai International Airport was planned to provide a fundamental solution to the aircraft noise pollution problem in the area surrounding Osaka International Airport (Itami Airport) and to the increasing demand for air transportation This man-made island was constructed 5 km offshore in Osaka bay to minimize noise pollution in residential areas. The airport commenced operations in September 1994. The second phase of construction work involved building an island further offshore than the island built in the first phase. Since the sea water is deep at the Kansai International Airport construction site and the layers below the seabed consist of a very soft layer of Holocene clay (immediately below the seabed surface) followed by alternate layers of Pleistocene clay and sand/gravel, the construction of an airport island was expected to produce a considerable amount of ground settlement. The amount of settlement during and after construction needed to be predicted in the design of the airport islands, and the results needed to be considered in the details of the land development work. This report outlines the second phase construction work at Kansai International Airport and describes the related geotechnical issues, with a particular emphasis on settlement.     

Survey of pesticide residues in imported cereal products (1994.4 approximately 2006.3)

A survey of pesticide residues in 490 imported cereal products on the Tokyo market from April 1994 to March 2006 was carried out. Eight kinds of organophosphorus pesticides (chlorpyrifos, chlorpyrifos-methyl, DDVP, diazinon, etrimfos, malathion, MEP and pirimiphos-methyl) were detected at levels between Tr (below 0.01 ppm) and 0.82 ppm from 91 samples.In our investigations, chlorpyrifos-methyl and malathion tended to be detected in samples from America, pirimiphos-methyl in those from Europe, and MEP in those from Oceania. Thus, pesticide residues seemed to be different in produce from different areas.Residue levels of these pesticides were calculated as between 0.08 and 13.2% of their ADI values according to the daily intake of cereal products. Therefore, these cereal products should be safe for normal usage.