Synthesis of TiB2 by High-Dose Implantation of Boron Ions in Titanium Films

Boron ions were implanted at room temperature in Ti films at a high dose (7.1 × 10^I7 and 2.3 × 10¹⁸ ions/cm²), The formation of TiB₂ films was confirmed by X-ray diffraction. Boron concentration profiles in implanted films were studied by secondary-ion mass spectrometry.     

Specular reflectivity studies of the adsorption and the oxidation of methanol on palladium in an alkaline solution

Adsorption and anodic oxidation of methanol on palladium electrode in 0·5 N NaOH was studied by measuring current—potential (i-E) and reflectivity—potential (R/R₀-E) curves. Presence of methanol retarded the formation of the oxide layer of Pd, giving rise to an anodic shift of the potential. A linear relation was found between the potential retarded and the logarithm of methanol concentration, the slope being about 30 mV/decade. The form of adsorbed entities was discussed based on the slope. The cathodic charge consumed by the reduction of Pd-oxide was smaller in the presence of methanol than in the absence. This was explained by three causes; the less amount of oxide layer formed during the anodic sweep owing to the adsorption of oxidation product of methanol, the reduction of formed oxide layer by a chemical reaction with methanol, and a compensation effect due to the anodic oxidation of methanol during the cathodic sweep. Plottings of the total charge in the anodic region vs — ΔR/R₀ in the absence and the presence of methanol suggested that electro-oxidation of methanol proceeds only at the bare portion of Pd.     

Effect of SO42− on catalytic activity of Fe2O3 for hydrocracking of coal

The catalytic activity of Fe₂O₃for the hydrocracking of a bituminous coal at 673K increases when a small amount of SO₄^2? is included in the catalyst. The effect of SO₄^2? is marked in the formation of resins, stronger polar compounds and asphaltenes.     

Low energy nitrogen ion doping into GaAs using combined ion-beam and molecular-beam epitaxy method

Low energy nitrogen (N) ions were irradiated during the epitaxial growth of GaAs using combined ion beam and molecular beam epitaxy (CIBMBE) method as a function of N⁺ ion acceleration energy (E_a) and N⁺ ion beam current density (I_N). E_a was varied from 70 to 170 eV I_N from 900 pA/cm² to 75 nA/cm². GaAs growth rate was fixed to 1 μm/h. In 2 K photoluminescence (PL) spectra of the samples with I_N = 3 nA/cm² and E_a = 70–100 eV, two sharp emissions at 1.508 eV (X₁) and 1.495 eV (X₂), which have been attributed to the emissions of excitons bound to isolated N atoms, and another one at 1.443 eV (X₅) were observed. These results show that nitrogen (N) atom in GaAs becomes optically active as an isoelectronic impurity at least in as-grown condition. For N⁺ ion-irradiated samples with rather high I_N, e.g., with I_N = 75 nA/cm² and E_a = 100 eV, a broad emission together with multiple sharp ones were observed after furnace annealing at 750°C which were ascribed to emissions of excitons bound to nitrogen-nitrogen (N---N) pairs.     

Continuous multi-particle crystal growth in vertical cones

Equations of continuity and motion for dispersed two-phase flow with phase growth are derived and a one-dimensional steady state solution of these equations is obtained for the design and operation of a vertical cone as a continuous crystallizer. This solution is verified by semi-continuous and continuous crystal growth experiments. Cones having divergence angles below about 7° were found to be suitable as continuous classifying crystallizers and an approximate flooding range was found.     

Kleene chain completeness and fixedpoint properties

Let L denote the nonscalar complexity in k(x₁,…, x_n). We prove $\text{L(?,??/?x}{}_1\text{,…,??/?x}{}_{\mathrm{n}}\text{)?3L(?)}$. Using this we determine the complexity of single power sums, single elementary symmetric functions, the resultant and the discriminant as root functions, up to order of magnitude. Also we linearly reduce matrix inversion to computing the determinant.     

Syntheses of dihydrolavandulol and its related compounds from carboxylic acids and conjugated dienes

5-Methyl-2-isopropyl-4-hexenoic acid, dihydrolavandulic acid (III) , was synthesised in 65% yield from 3-methylbutanoic acid and isoprene with sodium naphthalenide in the presence of N,N,N′,N′-tetramethylethylenediamine. Reduction of III with lithium aluminum hydride gave 5-methyl-2-isopropyl-4-hexen-l-ol, dihydrolavandulol ( IV ) (85% yield). Oxidation of IV with pyridinium chlorochromate gave 5-methyl-2-isopropyl-4-hexenal, dihydrolavandulyl aldehyde ( V ) (81 % yield).