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291.
Ching-Te Chuang Bernstein K. Joshi R.V. Puri R. Kim K. Nowak E.J. Ludwig T. Aller I. 《Circuits and Devices Magazine, IEEE》2004,20(1):6-19
The generation-over-generation scaling of critical CMOS technology parameters is ultimately bound by nonscalable limitations, such as the thermal voltage and the elementary electronic charge. Sustained improvement in performance and density has required the introduction of new device structures and materials. Partially depleted SOI, a most recent MOSFET innovation, has extended VLSI performance while introducing unique idiosyncrasies. Fully depleted SOI is one logical extension of this device design direction. Gate dielectric tunneling, device self-heating, and single-event upsets present developers of these next-generation devices with new challenges. Strained silicon and high-permittivity gate dielectric are examples of new materials that will enable CMOS developers to continue to deliver device performance enhancements in the sub-100 nm regime. 相似文献
292.
Hyungtak Kim Thompson R.M. Tilak V. Prunty T.R. Shealy J.R. Eastman L.F. 《Electron Device Letters, IEEE》2003,24(7):421-423
The authors report on the effects of silicon nitride (SiN) surface passivation and high-electric field stress (hot electron stress) on the degradation of undoped AlGaN-GaN power HFETs. Stressed devices demonstrated a decrease in the drain current and maximum transconductance and an increase in the parasitic drain series resistance, gate leakage, and subthreshold current. The unpassivated devices showed more significant degradation than SiN passivated devices. Gate lag phenomenon was observed from unpassivated devices and removed by SiN passivation. However, SiN passivated devices also showed gate lag phenomena after high-electric field stress, which suggests possible changes in surface trap profiles occurred during high-electric field stress test. 相似文献
293.
Kilchytska V. Neve A. Vancaillie L. Levacq D. Adriaensen S. van Meer H. De Meyer K. Raynaud C. Dehan M. Raskin J.-P. Flandre D. 《Electron Devices, IEEE Transactions on》2003,50(3):577-588
This work presents a systematic comparative study of the influence of various process options on the analog and RF properties of fully depleted (FD) silicon-on-insulator (SOI), partially depleted (PD) SOI, and bulk MOSFET's with gate lengths down to 0.08 /spl mu/m. We introduce the transconductance-over-drain current ratio and Early voltage as key figures of merits for the analog MOS performance and the gain and the transition and maximum frequencies for RF performances and link them to device engineering. Specifically, we investigate the effects of HALO implantation in FD, PD, and bulk devices, of film thickness in FD, of substrate doping in SOI, and of nonstandard channel engineering (i.e., asymmetric Graded-channel MOSFETs and gate-body contacted DTMOS). 相似文献
294.
Static energy reduction techniques for microprocessor caches 总被引:1,自引:0,他引:1
Hanson H. Hrishikesh M.S. Agarwal V. Keckler S.W. Burger D. 《Very Large Scale Integration (VLSI) Systems, IEEE Transactions on》2003,11(3):303-313
Microprocessor performance has been improved by increasing the capacity of on-chip caches. However, the performance gain comes at the price of static energy consumption due to subthreshold leakage current in cache memory arrays. This paper compares three techniques for reducing static energy consumption in on-chip level-1 and level-2 caches. One technique employs low-leakage transistors in the memory cell. Another technique, power supply switching, can be used to turn off memory cells and discard their contents. A third alternative is dynamic threshold modulation, which places memory cells in a standby state that preserves cell contents. In our experiments, we explore the energy and performance tradeoffs of these techniques. We also investigate the sensitivity of microprocessor performance and energy consumption to additional cache latency caused by leakage-reduction techniques. 相似文献
295.
A condition for the formation of unstable drops of an ideal liquid in a gas and bubbles in an ideal liquid at a cylindrical nozzle executing longitudinal vibrations is considered. Expressions are derived for the particle size as functions of the parameters of the nozzle and the characteristics of vibration. A necessary and sufficient condition for the formation of a stable particle at the vibrating nozzle is determined. The theoretical and experimental data are in satisfactory agreement. 相似文献
296.
T. Choi J.‐H. Jang C.K. Ullal M.C. LeMieux V.V. Tsukruk E.L. Thomas 《Advanced functional materials》2006,16(10)
The probing of the micromechanical properties within a two‐dimensional polymer structure with sixfold symmetry fabricated via interference lithography reveals a nonuniform spatial distribution in the elastic modulus “imprinted” with an interference pattern in work reported by Tsukruk, Thomas, and co‐workers on p. 1324. The image prepared by M. Lemieux and T. Gorishnyy shows how the interference pattern is formed by three laser beams and is transferred to the solid polymer structure. The elastic and plastic properties within a two‐dimensional polymer (SU8) structure with sixfold symmetry fabricated via interference lithography are presented. There is a nonuniform spatial distribution in the elastic modulus, with a higher elastic modulus obtained for nodes (brightest regions in the laser interference pattern) and a lower elastic modulus for beams (darkest regions in the laser interference pattern) of the photopatterned films. We suggest that such a nonuniformity and unusual plastic behavior are related to the variable material properties “imprinted” by the interference pattern. 相似文献
297.
S. V. Doronin 《Chemical and Petroleum Engineering》2006,42(7-8):461-464
Current features are considered in the calculation of carrying capacities for constructions in engineering plant (EP). Methods
and algorithms are described for EP calculations with comprehensive incorporation of the effects from technological and working
defects on the behavior of structures under standard and emergency conditions.
__________
Translated from Khimicheskoe i Neftegazovoe Mashinostroenie, No. 8, pp. 38–40, August, 2006. 相似文献
298.
N. A. Sheikina L. V. Petrov B. L. Psikha V. V. Kharitonov V. A. Tyshchenko T. N. Shabalina 《Petroleum Chemistry》2006,46(1):34-40
The mechanism of the inhibiting effect of diphenylamine during the oxidation of two base stocks of hydraulic oils were studied at 120, 130, and 140°C. The key reactions in the mechanism of the action of the inhibitor were identified, and the values of the kinetic parameters and their activation energies were determined. The kinetic parameters were calculated, and the salient kinetic features of the inhibited oxidation of the two specimens were compared at 70°C, the temperature of accelerated testing of hydraulic oils. The results of this prediction were analyzed, and the reasons for differences in the oxidation stability of the samples examined were established. 相似文献
299.
Pressurized fabric tubes, pressure-stabilized beams (known as air beams) and air-inflated structures are considered to be valuable technologies for lightweight, rapidly deployable structures. Design optimization of an inflated structure depends on a thorough understanding of woven fabric mechanics. In this paper the bending response of woven pressure-stabilized beams have been experimentally tested and analytically investigated. Additionally, the micromechanical effects of interacting tows have been studied through finite element models containing contact surfaces and nonlinear slip/stick conditions. Local unit cell models consisting of pairs of woven tows were created to characterize the effective constitutive relations. The material properties from the unit cell models were then used for the global continuum model subjected to 4-point flexure. An experimental set-up was designed and manufactured for testing of Vectran and PEN air beams. The air beam mid-span deflections were measured as functions of inflation pressure and bending load. Plots of the elastic and shear moduli with respect to the pressure and coefficient of friction have been generated. It was determined that the effective elastic and shear moduli were functions of inflation pressure, the material used and the geometry of the weave. It was shown that pneumatic or pressurized tube structures differ fundamentally from conventional metal structures. 相似文献
300.
P. G. Muzykov Y. I. Khlebnikov S. V. Regula Y. Gao T. S. Sudarshan 《Journal of Electronic Materials》2003,32(6):505-510
To establish fast, nondestructive, and inexpensive methods for resistivity measurements of SiC wafers, different resistivity-measurement
techniques were tested for characterization of semi-insulating SiC wafers, namely, the four-point probe method with removable
graphite contacts, the van der Pauw method with annealed metal and diffused contacts, the current-voltage (I-V) technique,
and the contactless resistivity-measurement method. Comparison of different techniques is presented. The resistivity values
of the semi-insulating SiC wafer measured using different techniques agree fairly well. As a result, application of removable
graphite contacts is proposed for fast and nondestructive resistivity measurement of SiC wafers using the four-point probe
method. High-temperature van der Pauw and room-temperature Hall characterization for the tested semi-insulating SiC wafer
was also obtained and reported in this work. 相似文献