Ultrahigh-speed driverless MQW intensity modulator, and 20 Gbit/s, 100 km transmission experiments

An InGaArInAlAs MQW modulator with the low voltage of 1.5 V for 10 dB extinction ratio and 16 GHz bandwidth has been developed. This ultrahigh-speed modulator enables the modulator driver to be eliminated from the transmitter. 100 km transmission experiments have been carried out using either a 1 V peak to peak output monolithic-IC-driven modulator at 15 Gbit/s or a 2 V peak to peak output multiplexer-driven modulator at 20 Gbit/s. This is the first report on multigigabit operation of MQW modulators to the authors' knowledge.<>     

Multiwavelength InGaAs/InGaAsP strained-layer MQW-laser array usingshadow-masked growth

A simple technique for fabricating multiwavelength laser arrays is presented. The lateral variations in bandgap (or emission wavelength) between the different lasers are obtained by the use of shadow-masked growth. The shadow masked growth results in variations in thickness (and to a lesser extent, in composition) over the substrate. In combination with a multiquantum well (MQW) active region, this gives the required bandgap variations. By varying the window width in the shadow mask between 10 μm and >500 μm it was possible to obtain a wavelength span of 130 nm centered around 1.55 μm. The strained-layer-ridge MQW Fabry-Perot lasers showed a constant threshold current (around 70 mA for an 11-μm×500-μm stripe)     

Optical properties of metallic quantum wells

The authors model the optical properties of metallic quantum wells with thicknesses in the range of a few nanometers. A simple picture that includes only single electron transitions predicts strong absorption lines at frequencies associated with allowed interband transitions. This strong absorption feature can be in the near infrared for metal films several monolayers thick. The model is extended to include collective electron interactions by solving simultaneously Schroedinger's and Poisson's equations. It is found that the single electron picture does not change appreciably for frequencies above the bulk plasma frequency of the metal. For frequencies at or below the plasma frequency, however, the absorption is reduced in strength and becomes nearly featureless     

Mesa-isolated GaAs Schottky-barrier photodiodes

The design, fabrication and characterisation of GaAs Schottky-barrier photodiodes with evaporated, free-standing-metal airbridges is reported. The photodiodes were fabricated using all dry-etching techniques. Anisotropic chemically assisted ion beam etching was used to etch vertical sidewall mesas, and isotropic reactive ion etching was used to etch a lateral tunnel. A free-standing-metal airbridge created by the lateral tunnel etch results in isolation of the active area at the same time providing free-standing-metal interconnection to the contact pad.<>     

ZnSe/ZnMgSSe blue laser diode

The continuous wave operation of an ZnSe/ZnMgSSe laser diode was achieved for the first time at 77 K. Blue stimulated emission was observed at a wavelength of 447 nm and the threshold current density was 225 A/cm/sup 2/.<>     

Synchronous current control scheme with reference voltage estimation for voltage-fed PWM inverter

A new current control scheme with the reference voltage estimation for a voltage-fed pulsewidth modulated (PWM) inverter is presented. This scheme is simple and can provide smaller current error than predictive control with the same switching frequency when the load parameters are mismatched.<>     

Semi-Markov performance model of an extended token bus protocol†

In this paper we present the semi-Markov performance model of a bus protocol (IMAP—Improved token bus Multi-Access Protocol) suitable for embedded networks. IMAP is an improvement over the token bus scheme and is proposed in Sood et al. (1986). The semi-Markov model is developed by considering normal and interrupt modes of operation of IMAP. Performance of IMAP has been compared to token-bus scheme.     

Adhesion strength of leadframe/EMC interfaces

Cu-based leadframe sheets were oxidized in alkaline solutions to produce brown and/or black oxide on the surfaces, and molded with epoxy molding compound (EMC). The adhesion strength of leadframe/EMC interface was measured using sandwiched double-cantilever beam (SDCB) specimens and pull-out specimens. Results showed that the adhesion strength of leadframe/EMC interface was inherently very poor but could be increased drastically with the nucleation of acicular CuO precipitates. The presence of smooth-faceted Cu₂O on the surface of the leadframe gave close to zero fracture toughness (G_C) and suitable pull strength (PS). A direct correlation between G_C and PS showed that PS can be a measure of G_C only in a limited range.     

Stacking number dependence of size distribution of vertically stacked InAs/GaAs quantum dots

Vertically stacked layer structure is useful for controlling the size distribution of quantum dots. The dependence of the size distribution of quantum dots on the stacking numbers is theoretically and experimentally investigated. We show that the size distribution of quantum dots decreases with increasing the stacking number, and it occurs drastically when the stacking number is changed from 1 to 2. The quantitative analysis on in-plane strain energy distribution is also performed for the explanation.     

Low-Power Parallel Video Compression Architecture for a Single-Chip Digital CMOS Camera

A low-power, large-scale parallel video compression architecture for a single-chip digital CMOS camera is discussed in this paper. This architecture is designed for highly computationally intensive image and video processing tasks necessary to support video compression. Two designs of this architecture, an MPEG2 encoder and a DV encoder, are presented. At an image resolution of 640 × 480 pixels (MPEG2) and 720 × 576 (DV) and a frame rate of 25 to 30 frames per second, a computational throughput of up to 1.8 billion operations per second (BOPS) is required. This is supported in the proposed architecture using a 40 MHz clock and an array of 40 to 45 parallel processors implemented in a 0.2 m CMOS technology and with a 1.5 V supply voltage. Power consumption is significantly reduced through the single-chip integration of the CMOS photo sensors, the embedded DRAM technology, and the proposed pipelined parallel processors. The parallel processors consume approximately 45 mW of power resulting a power efficiency of 40 BOPS/W.