Use of liquid sealants to protect still-waste-containing tanks-settling basins from corrosion

Translated from Khimicheskoe i Neftyanoe Mashinostroenie, No. 10, pp. 29–31, October, 1992.     

Memory of Distributed Computer Systems: Distinctive Features of Their Architectural-Structural Organization and Use

Distinctive features of architectural-structural organization and use of memory networks are considered with the aim of choosing an optimal configuration in designing distributed computer systems.     

Preparation of structurally-colored aromatic polyamides and their physicochemical properties

Conclusions One-, two-, and three-stage methods of preparing structurally-dyed aromatic polyamides with chromophoric fragments in the chain have been investigated.It has been shown that the molecular weight of the polymers obtained and the proportion of chromophores bound into their chain is determined by the reactivity of the starting diaminoanthraquinones.It has been found that the introduction of anthraquinone units into the poly-m-phenylene isophthalamide chain has little effect on the structure or basic physicochemical properties of the polyamide, but gives the polymer a uniform and regular coloration.Structural dyeing of poly-m-phenylene isophthalamide with fragments of 1,5-DAAQ or 4,8-DADHAQ increases the resistance of the polyamide fibres to UV irradiation.The authors express their thanks to Yu. Ya. Shavarin and N. M. Bol'bit for performance of the fibre irradiation, and also to B. A. Tsaplin for thermomechanical testing of the fibres.L. Ya. Karpov NIFKhI, Moscow. VNIISV, Tver'. Translated from Khimicheskie Volokna, No. 2, pp. 24–27, March–April, 1992.     

A laser deformometer applied to seismic detector metrological characteristics

A set of standard equipments is considered for reproducing seismic oscillation parameters that have been developed at the Mendeleev All-Union Metrology Research Institute.Translated from Izmeritel'naya Tekhnika, No. 8, pp. 36–38, August, 1993.     

Magnetotransport properties of type II heterojunctions based on GaInAsSb/InAs and GaInAsSb/GaSb

The results of detailed study of the magnetotransport properties of broken-gap type II heterojunctions in a GaInAsSb/InAs(GaSb) system are reported. An electron channel with a high charge-carrier mobility (as high as 50000–60000 cm²/(V s)) is observed and studied for the first time in an isotype broken-gap p-GaInAsSb/p-InAs heterostructure. The effects of electron-channel depletion and semimetal-semiconductor transition in the case of heavy doping of the quaternary alloy with acceptors are studied. Magnetotransport properties at temperatures of 4.2–200 K are studied in detail. Data on the energy spectrum and parameters of two-dimensional charge carriers at the heteroboundary are obtained. It is ascertained experimentally that, depending on the composition, either staggered (at x = 0.85) or broken-gap (at x = 0.95) heterojunctions can be formed in the Ga_1?x In_xAs_ySb_1?y /GaSb, which is confirmed by theoretical calculations. The anomalous Hall effect and negative magnetoresistance were observed in GaInAsSb/InAs:Mn grown on substrates doped heavily with Mn magnetic acceptor impurity so that the hole concentration was as high as p > 5 × 10¹⁸ cm^?3; these phenomena are caused by exchange interaction of Mn ions in InAs with high-mobility charge carriers in the electron channel at the heterointerface.     

Analyzing conductance-frequency curves of metal-insulator-semiconductor structures subject to surface-potential fluctuations and electrically active states inside the insulator

For metal-insulator-semiconductor structures, a technique is described of analyzing the normalized conductance measured as a function of frequency with regard to the random variation of surface potential and the presence of electrically active states inside the insulator. Parameters are selected that are to be used in evaluating the amount by which the conductance-frequency characteristic is broadened. Analytical expressions are derived for the parameters. A method is proposed for separating the respective contributions of the tunneling and fluctuation mechanisms of the broadening. It enables one to evaluate the depth of the electrically active states and the variance of the surface potential when the two factors make comparable contributions to the inhomogeneity of the insulator-semiconductor interface.     

Waste products from the butane-butylene fraction as raw material for the production of methyl-tert-butyl ether

Translated from Khimiya i Tekhnologiya Topliv i Masel, No. 8, pp. 7–8, August, 1990.