Ternary alloying study of MoSi2

Ternary alloying of MoSi₂ with adding a series of transition elements was investigated by X-ray diffraction (XRD), scanning electron microscopy, transmission electron microscopy (TEM), and energy dispersive spectroscopy (EDS). Iron, Co, Ni, Cr, V, Ti, and Nb were chosen as alloying elements according to the AB₂ structure map or the atomic size factor. The studied MoSi₂ base alloys were prepared by the arc melting process from high-purity metals. The EDS analysis showed that Fe, Co, and Ni have no solid solubility in as-cast MoSi₂, while Cr, V, Ti, and Nb exhibit limited solid solubilities, which were determined to be 1.4±0.7, 1.4±0.4, 0.4±0.1, and 0.8±0.1. Micro-structural characterization indicated that Mo-Si-M_VIII (M_VIII=Fe, Co, Ni) and Mo-Si-Cr alloys have a two-phase as-cast microstructure, i.e., MoSi₂ matrix and the second-phase FeSi₂, CoSi, NiSi₂, and CrSi₂, respectively. In as-cast Mo-Si-V, Mo-Si-Ti, and Mo-Si-Nb alloys, besides MoSi₂ and C40 phases, the third phases were observed, which have been identified to be (Mo, V)₅Si₃, TiSi₂, and (Mo, Nb)₅Si₃.     

中子产额大于1.5×10^10n／s的密封中子管

报道了一种中子产额大于１．５×１０１０ｎ／ｓ、靶和离子源都可拆卸的密封中子管，以它为核心研制的密封中子发生器已被用于中子照像等领域，并取得了较好的结果。     

新取代苯基荧光酮试剂的合成及其性质的研究Ⅱ．新型取代苯基荧光酮与金属离子显色反应的研究

研究了３，５－二溴－４－氨基苯基荧光酮、３，５－二溴－４－偶氮变色酸等８种苯基荧光酮在酸性介质中与高价金属离子Ｚｒ（Ⅳ）、Ｍｏ（Ⅵ）、Ｗ（Ⅵ）、Ａｌ（Ⅲ）、Ｇａ（Ⅲ）等的显色反应。３，５－位二溴取代的试剂的灵敏度高于未取代的灵敏度，摩尔吸光系数绝大多数在１０５Ｌ·ｍｏｌ－１·ｃｍ－１以上。     

β－C_2S固溶体稳定的热力学研究

从热力学理论出发，利用Ｘ射线衍射定性和定量的方法，对β－Ｃ＿２Ｓ固溶体的稳定性进行了分析和研究。经热力学理论推导得出β－Ｃ＿２Ｓ稳定的热力学条件，即掺入的微量元素的化学位μ＿ｉ须小于β－Ｃ＿２Ｓ的反应自由焓△Ｇ＿β，μ＿ｉ＜△Ｇ＿β．并定量地计算出一种微量元素稳定β－Ｃ＿２Ｓ的临界掺加量为；多种微量元素对β－Ｃ＿２Ｓ的稳定性判断条件为：     

外循环型鼓泡式反应器气含率及循环液速率

对直径２８０ｍｍ、扩大直径５００ｍｍ、外循环管直径６５ｍｍ、总高２９００ｍｍ的外循环型鼓泡式反应器，在气体空塔线速Ｕｇ为０．０４－０．５５ｍ／ｓ时，用静压差法和脉冲示踪法测定了不同部位的气含率Ｅｇ，Ｅｐｇ和循环液速率ｕ１，并获得了它们的关联式：对反应段，Ｅｇ＝０．４５５６Ｕ＾０．３１９８ｇ〔Ｕｇ／（Ｕｇ＋Ｕ１）〕＾０．７３９６；对反应器扩大段，Ｅｕｇ＝０．９３８９Ｕ＾０．４４３１ｕｇ；对循环管，Ｅ     

台阶轴自由锻造工艺的计算模型

台阶轴是一类复杂锻件，合理的工艺计算模型是提高工艺设计水平的关键。本文提出三段式于模型以及虚拟轴节方法可以概括各种台阶轴，在此基础上可采用现代计算机及计算机优化技术，自动编制出最优的锻造工艺方案。     

除尘改造设计中风量平衡分析

详细说明除尘设计改造中风量的压力损失计算，风量平衡过程及通风管道直径和走向的确定。     

MOS控制晶闸管的三重扩散工艺研究

本文对ＭＣＴ的核心工艺－三重扩散工艺进行了详细研究。通过ＳＵＰＲＥＭ－Ⅲ计算机工艺仿真，获得了三重扩散的工艺条件。     

Analysis of a resonant-cavity enhanced GaAs/AlGaAs MSMphotodetector

The authors have developed a 2-D device simulator for heterostructure metal-semiconductor-metal (MSM) photodetectors. They have incorporated a model of multilayer optics into the simulator and used it to analyze the temporal response of a resonant-cavity enhanced heterostructure with a confining buffer layer and a distributed Bragg reflector (DBR). The authors show that through fine tuning the layer thicknesses, optical resonance enhancement of the light absorption can be obtained