Coherence-Based 3-D and Spectral Imaging and Laser-Scanning Microscopy

The basics of three-dimensional (3-D) and spectral imaging techniques that are based on the detection of coherence functions and other related techniques are reviewed. The principle of the 3-D source retrieval is based on understanding the propagation law of optical random field through the free space. The 3-D and spectral information are retrieved from the cross-spectral density function of optical random field or numerical calculation of the inverse propagation of the cross-spectral density. We will first introduce the coherence-based spectral tomography techniques with low-coherence light sources. These techniques limit their scheme of coherence detection only along the optical axis and some of them achieve simultaneously the high resolution and high speed of detection taking advantage of an imaging lens. We then provided explanations of the principle of 3-D source retrieval that is based on the propagation law of optical random field through the free space along with the introduction of the numerical holography and computed tomography techniques. We will lastly show 3-D spectral imaging schemes with the concurrent laser-scanning cross-sectioning techniques: one is the confocal laser scanning microscopy and the other is the two-photon laser-scanning fluorescence microscopy.     

Development of quasi-end-fired waveguide plastic dye laser

A quasi-end-fire (QEF) pumping scheme was proposed and studied as a novel laser-pumping-scheme for a laser-dye-doped plastic waveguide laser with distributed feedback. This pumping scheme resembled longitudinal pumping, but also has the advantage of controllable absorption length of the injected pump beam. A first demonstration of the QEF was performed and the pumping beam controlling was also investigated.     

Nanoimprinting using release-agent-coated resins

A fluorinated self-assembled monolayer (F-SAM) is mainly used as the antisticking layer. To prevent the F-SAM coated on the nanoimprint lithography (NIL) mold from deteriorating, we propose a new form of nanoimprinting using a release-agent-coated resin. The results from measuring the surface free energy and observations by scanning probe microscopy (SPM) confirmed that the surface free energy, frictional force, and adhesion force of the release-agent spray-coated polymethylmethacrylate (PMMA) were lower than those of PMMA. To prove the release-agent spray-coated PMMA had a releasing effect, we tried to undertake thermal nanoimprinting on it using a mold without F-SAM. The pattern was clearly imprinted on the resin without any signs of adhesion.     

40 Gbit/s electroabsorption modulators with impedance-controlled electrodes

A novel travelling-wave electroabsorption optical modulator, electrically matched for 50 /spl Omega/ loads of driving circuit drivers, was developed. The scattering parameter of electric reflection (S/sub 11/) from this modulator is less than -20 dB at 20 GHz. It can thus enable a 40 Gbit/s, 2 km SMF transmission with a 0.3 dB penalty at a 1.3 /spl mu/m wavelength.     

Three orthogonal polarisation DRA-monopole ensemble

A dual feed HE/sub 11/spl delta// mode dielectric resonator antenna (DRA) loaded monopole antenna ensemble is described. The two antennas were unaffected by co-location, having coupling less than -25 dB at 2.33 GHz, making the ensemble capable of radiating all three orthogonal linear polarisations. The dielectric resonator antenna had an input impedance bandwidth of 1.9%, while the monopole gave 56%. This small volume ensemble antenna is suitable for mobile communications terminals.     

Electron transport through the MOCVD grown GaAs/AlGaAs/GaAs heterojunction barrier

We investigated the current/voltage characteristics of n+GaAs/undoped AlxGa1?xAs (200 A)/n+GaAs heterostructures grown by the metalorganic chemical vapour deposition (MOCVD) method between 77 K and 300 K. Both the voltage dependence and the temperature dependence of the current were in good agreement over a wide current range with the calculated results of the tunnelling and thermionic emission current.     

Hydroxyl group formation caused by hydrogen diffusion into optical glass fibre

Transmission loss increase of optical glass fibre caused by hydrogen diffusion is measured as a function of temperature and partial pressure of hydrogen gas. The activation energy of hydroxyl group formation from the diffused molecular hydrogen was found to be 15.9 kcal/mole. Also the hydroxyl absorption loss increase at 200°C was found to be proportional to the square root of the partial pressure of hydrogen gas.     

Metal Single-Atom Cocatalyst on Carbon Nitride for the Photocatalytic Hydrogen Evolution Reaction: Effects of Metal Species

Single-atom (SA) catalysts exhibit high activity in various reactions because there are no inactive internal atoms. Accordingly, SA cocatalysts are also an active research fields regarding photocatalytic hydrogen (H₂) evolution which can be generated by abundant water and sunlight. Herein, it is investigated whether 10 transition metal elements can work as an SA on graphitic carbon nitride (g-C₃N₄; i.e., gCN), a promising visible-light-driven photocatalyst. A method is established to prepare SA-loaded gCN at high loadings (weight of ≈3 wt.% for Cu, Ni, Pd, Pt, Rh, and Ru) by modulating the photoreduction power. Regarding Au and Ag, SAs are formed with difficulty without aggregation because of the low binding energy between gCN and the SA. An evaluation of the photocatalytic H₂-evolution activity of the prepared metal SA-loaded gCN reveals that Pd, Pt, and Rh SA-loaded gCN exhibits relatively high H₂-evolution efficiency per SA. Transient absorption spectroscopy and electrochemical measurements reveal the following: i) Pd SA-loaded gCN exhibits a particularly suitable electronic structure for proton adsorption and ii) therefore they exhibit the highest H₂-evolution efficiency per SA than other metal SA-loaded gCN. Finally, the 8.6 times higher H₂-evolution rate per active site of Pd SA is achieved than that of Pd-nanoparticles cocatalyst.     

A channel-erasing 1.8-V-only 32-Mb NOR flash EEPROM with a bitlinedirect sensing scheme

A 1.8-V-only 32-Mb NOR flash EEPROM has been developed based on the 0.25-μm triple-well double-metal CMOS process. A channel-erasing scheme has been implemented to realize a cell size of 0.49 μm² , the smallest yet reported for 0.25-μm CMOS technology. A block decoder circuit with a novel erase-reset sequence has been designed for the channel-erasing operation. A bitline direct sensing scheme and a wordline boosted voltage pooling method have been developed to obtain high-speed reading operation at low voltage. An access time of 90 ns at 1.8 V has been realized     

Theoretical and measured characteristics of metal(CoSi2)-insulator(CaF2) resonant tunnelingtransistors and the influence of parasitic elements

We report on the theoretical and measured characteristics of triple-barrier metal (CoSi₂)-insulator(CaF₂) (M-I) resonant tunneling transistors (RTT) grown on an n-Si(111) substrate, and the influence of their parasitic elements on the measured characteristics. First, we analyze theoretical characteristics of an M-I RTT, and then show fabrication process and current-voltage (I-V) characteristics obtained at 77 K, in which several degradations are observed: large resonance voltage, low peak-to-valley (P-V) ratios at negative differential resistance (NDR), and reverse base current. Analysis, taking several parasitic elements (e.g., base resistance, substrate resistance and leakage currents connected to the intrinsic transistor) into account, explains observed characteristics well. Finally, we show the first transistor action with large P-V ratios at 300 K, which is achieved by reducing collector-emitter leakage currents