Kochen-Specker theorem studied with neutron interferometer

The Kochen-Specker theorem shows the incompatibility of noncontextual hidden variable theories with quantum mechanics. Quantum contextuality is a more general concept than quantum non-locality which is quite well tested in experiments using Bell inequalities. Within neutron interferometry we performed an experimental test of the Kochen-Specker theorem with an inequality, which identifies quantum contextuality, by using spin-path entanglement of single neutrons. Here entanglement is achieved not between different particles, but between degrees of freedom of a single neutron, i.e., between spin and path degree of freedom. Appropriate combinations of the spin analysis and the position of the phase shifter allow an experimental verification of the violation of an inequality derived from the Kochen-Specker theorem. The observed violation 2.291±0.008?1 clearly shows that quantum mechanical predictions cannot be reproduced by noncontextual hidden variable theories.     

Electron microscopic visualization of collagen aggregates without chemical staining.

Lateral, uni-directional aggregates of collagen, segment-long-spacing crystallites (SLS), were made by dialyzing collagen solutions against acetic acid containing ATP, and were examined by transmission electron microscopes without electron staining. There detected were at least 20 dark (electron dense) cross-striations within SLS. The banding pattern was compared with the biochemical and biophysical properties of the amino acid side chains along the collagen molecule. The banding pattern of unstained SLS was mostly correlated with the intramolecular distribution of basic amino acid residues. Since basic amino acids have relatively large side chains, the distribution of mass (molecular weight of amino acids) along the molecule (local density profile) partially explained the cross-striation. Addition of fractions of molecular weight of ATP to basic residues made the local density profile much better correlate to the banding pattern. We conclude that the electron microscopic banding pattern of unstained SLS was generated by the local amount of material or local density profile along the collagen aggregates, which was enhanced by ATP bound to positively charged basic residues. The concept that the electron density correlates with the amount of material is fundamental in electron microscopy, and it has been proven with biological materials in this paper.     

Photoluminescence characteristics and pit formation of InGaN/GaN quantum-well structures grown on sapphire substrates by low-pressure metalorganic vapor phase epitaxy

We have examined how a growth interruption, caused by closing group-III sources, affects the crystalline quality of InGaN/GaN quantum-well (QW) structures grown by metalorganic vapor phase epitaxy. The QW samples were characterized by their photoluminescence (PL), and by atomic force microscopy (AFM), transmission electron microscopy (TEM), and energy dispersive x-ray (EDX) microanalysis. The PL peak wavelength was strongly dependent on the duration of the growth interruption and on the number of QW layers. AFM measurements revealed that the size of the open hexagonally shaped pits in the QW structures increased dramatically as the interruption duration was lengthened. Through TEM and EDX microanalysis, we found that the formation of these hexahedronal pits, formed due to the growth interruption, causes a large fluctuation in the In composition, especially around the pits, and the presence of such pits in an underlying QW layer strongly affects the In incorporation into the upper QW layers, leading to significant growth-rate variation in an InGaN QW layer and red-shifting of the PL spectra when a multiple-QW structure is grown.     

Effects of base layer thickness on reliability of CVD Si3N4 stack gate dielectrics

Effects of the base layer in Si₃N₄/SiON stack gate dielectrics, in particular, the physical thickness of the base layer, on the dielectric reliability, MOSFET performance and process controllability are investigated. It is found that the electrical characteristics such as TDDB lifetime as well as the Si₃N₄ film property in Si₃N₄/SiON stack dielectrics with the same capacitance oxide equivalent thickness strongly depend on the SiON-base layer thickness. From the TDDB measurements for both stress polarities and from the Si₃N₄ stoichiometry by the X-ray photoelectron spectroscopy analysis, the optimum SiON-base layer thickness is determined to be approximately 1 nm, in order to obtain longer TDDB lifetime and surperior n-ch MOSFET performance. The obtained results are considered to attribute to the nitrogen profile in the Si₃N₄/SiON stack dielectrics and the strained layer thickness near SiON/Si interface.     

The Nanometer-Sized Eutectic Structure of Si/CrSi<Subscript>2</Subscript> Thermoelectric Materials Fabricated by Rapid Solidification

Nanostructuring is known to be an effective method to improve thermoelectric performance but, generally, it requires complex procedures and much labor. In the present study, self-assembled nanometer-sized composite structures of silicon (Si) and chromium disilicide (CrSi₂) were easily fabricated by the rapid solidification of a melt with a eutectic composition. Ribbon-like samples were obtained with a dominant nanostructure of fine aligned lamellae with a spacing range of 20–35 nm. The thermoelectric power factor of the ribbon was observed to be 1.2 mW/mK² at room temperature and reached 3.0 mW/mK² at 773 K. The thermal conductivity was 65% lower than that of a bulk eutectic sample. The results suggest that this method is promising for fabricating an effective nanostructure for thermoelectric performance.     

Demonstration of 100 Gbps optical packet switching using header processor based on 48-bit longest prefix matching

Wire-rate packet processing and its energy saving for over 100 Gbps speed of line are major issues to be resolved in optical packet switching (OPS) networks. For that purpose, we newly develop a high-speed, deterministic-latency electronic header processor based on longest prefix matching (LPM) for searching optical packet destination addresses (OP-DAs). This paper reports the successful experimental results of electronic header processing based on LPM search of up to 48 bits and optical switching of 100 Gbps optical packets by the use of the header processor. We demonstrate 48-bit LPM-capable optical packet switching. We also demonstrate IP packet transfer and 32-bit LPM-capable optical packet switching. In the latter demonstration, the 32-bit OP-DA of optical packets is directly copied from the 32-bit destination address of Internet Protocol version 4 (IPv4) packets. This result indicates that OPS networks can be deployed with electronic IP networks by the use of integrated network operation between OPS and IP networks.     

Analysis and design of a 1.8-2.7 GHz tunable 8-band TDD LTE receiver front-end

This paper describes the analysis and design of a 0.13μm CMOS tunable receiver front-end that supports 8 TDD LTE bands,covering the 1.8-2.7 GHz frequency band and supporting the 5/10/15/20 MHz bandwidth and QPSK/16QAM/64QAM modulation schemes.The novel zero-IF receiver core consists of a tunable narrowband variable gain low-noise amplifier(LNA),a current commutating passive down-conversion mixer with a 2nd order low pass trans-impedance amplifier,an LO divider,a rough gain step variable gain pre-amplifier,a tunable 4th order Chebyshev channel select active-RC low pass filter with cutoff frequency calibration circuit and a fine gain step variable gain amplifier.The LNA can be tuned by reconfiguring the output parallel LC tank to the responding frequency band,eliminating the fixed center frequency multiple LNA array for a multi-mode receiver. The large various gain range and bandwidth of the analog baseband can also be tuned by digital configuration to satisfy the specification requirement of various bandwidth and modulation schemes.The test chip is implemented in an SMIC 0.13μm 1P8M CMOS process.The full receiver achieves 4.6 dB NF,-14.5 dBm out of band IIP3, 30-94 dB gain range and consumes 54 mA with a 1.2 V power supply.     

SEMICONTINUOUS ETHANOL FERMENTATION WITH SHOCHU DISTILLERY WASTE*

An effective utilization system using distillery waste discharged from Japanese traditional shochu factory was developed. Mugi (barley) shochu distillery waste discharged from a novel vacuum distillation procedure (35–40°C) contained a large number of viable yeast (7 × 10⁶ cells/ml), glucoamylase activity (19.7 units/ml), acid protease activity (940 units/ml), and neutral protease activity (420 units/ml). Ethanol fermentation was achieved with a mash composed of glucose as the sola carbon source and mugi shochu distillery waste. After ethanol fermentation was completed the fermented broth was again distilled at 35–40°C in vacuo and the non volatile residue used in the next ethanol fermentation. In this way, semicontinuous ethanol fermentation system of more than 10 cycles was developed. Even in the distillate of the mash of the 8th fermentation cycle, 7.9% of ethanol, 33.0 ppm of ethyl acetate, 28.5 ppm of isobutyl alcohol, and other aromatic compounds were present. A semicontinuous ethanol fermentation system has been developed for shochu distillery waste which conventionally is treated as wastewater.     

Effect of GaAs surface pretreatment on electrical properties of MBE-ZnSe/GaAs substrate interfaces

Interface properties of MBE-grown ZnSe/GaAs substrate systems formed on variously pretreated GaAs surfaces, which include standard chemically etched (5H₂SO₄:1H₂O₂: 1H₂O), (NH₄)₂S_x-, NH₄I-, and HF-pretreated surfaces, are investigated by capacitance-voltage (C-V) and deep level transient spectroscopy (DLTS) measurements. A HF-pretreated and annealed ZnSe/p-GaAs sample showed marked reduction of interface state density, N_ss, with N_ss,_min below 4 x 10¹¹cm^-2 eV^-1 near E_c- E_FS= 1.0 eV. The value is about one order of magnitude smaller than that of the standard chemically etched interface, and comparable to (NH₄)₂S_x- pretreated interface. Nevertheless, C-V characteristics of ZnSe/nGaAs samples, which were measured for the first time, indicate that interface Fermi level, E_FS, is not completely unpinned due to the interface states located above the midgap. A consistent result was obtained by DLTS method in determining E_FS position. The influence of N_ss distribution on vertical current conduction is also analyzed. It is found that U-shaped interface states with N_ss(E) > 1 x 10¹³ cm^-2 eV^-1 above the midgap may cause an excess voltage drop larger than a few volts at the interface.     

Survey of switching techniques in high-speed networks and their performance

One of the most promising approaches for high speed networks for integrated service applications is fast packet switching, or ATM (asynchronous transfer mode). ATM can be characterized by very high speed transmission links and simple, hard-wired protocols within a network. To match the transmission speed of the network links, and to minimize the overhead due to the processing of network protocols, the switching of cells is done in hardware switching fabrics in ATM networks. A number of designs have been proposed for implementing ATM switches. Although many differences exist among the proposals, the vast majority of them are based on self-routeing multistage interconnection networks. This is because of the desirable features of multi-stage interconnection networks such as self-routeing capability and suitability for VLSI implementation. Existing ATM switch architectures can be classified into two major classes: blocking switches, where blockings of cells may occur within a switch when more than one cell contends for the same internal link, and non-blocking switches, where no internal blocking occurs. A large number of techniques have also been proposed to improve the performance of blocking and non-blocking switches. In this paper, we present an extensive survey of the existing proposals for ATM switch architectures, focusing on their performance issues.