Stress function with finite magnitude of stress concentration around an interface crack

A new mathematical model for study of an interface crack between two dissimilar elastic half planes is proposed. A process zone is formed along the interface between the physical crack and the continuous part. Both the crack opening (and sliding) displacement with a smooth shape and the finite magnitude of stress concentration appear in this zone. The analytical model is expressed by closed elastic solutions using complex variables, but with no oscillations at the crack tip.     

A novel on-chip electrostatic discharge (ESD) protection withcommon discharge line for high-speed CMOS LSIs

A novel on-chip electrostatic discharge (ESD) protection for high-speed CMOS LSI's that operate at higher than 500 MHz has been developed. Introduction of a newly developed common discharge line (CDL) can completely eliminate the protection device influence on the inner circuit operation. This enables minimization of the I/O capacitance by shrinking the dimension of the output transistor, which also serves as a protection device in conventional devices. This new protection (CDL protection) was applied to a high-speed DRAM of which I/O pin capacitance specification is 2 pF. As a result, the ESD tolerance of 4 kV for the charged device model test, 4 kV for the human body model test, and 700 V for the machine model test were obtained. In addition, the DRAM data rate higher than 660 MHz at room temperature was achieved. The results show significant improvement for both ESD and the I/O capacitance, compared with the conventional structure     

Microscopic fatigue processes in a plain-weave glass-fibre composite

This paper focuses on the microscopic damage and progressive failure of a composite reinforced by plain-weave glass cloth under tensile fatigue loading. The fatigue process was divided into three stages like that of multi-directional laminates. It was found that the internal damage at each stage (matrix cracks, debonds in the weft, successive debonds in the warp and ‘metadelaminations’ between warps and wefts) occurred near the cross-over point of the fabric. The modulus decay mechanism was explained by considering the progression of this internal damage. From the end of the first stage to the beginning of the middle stage, a characteristic damage state (CDS) (called a ‘meta-CDS’) was observed. It was found that woven composites have a unit area of damage accumulation (called a ‘unit cell’) and the damage of each unit cell and its distribution control the total fatigue damage of the material.     

A 286 mm2 256 Mb DRAM with ×32 both-ends DQ

This paper describes a 256 Mb DRAM chip architecture which provides up to ×32 wide organization. In order to minimize the die size, three new techniques: an exchangeable hierarchical data line structure, an irregular sense amp layout, and a split address bus with local redrive scheme in the both-ends DQ were introduced. A chip has been developed based on the architecture with 0.25 μm CMOS technology. The chip measures 13.25 mm×21.55 mm, which is the smallest 256 Mb DRAM ever reported. A row address strobe (RAS) access time of 26 ns was obtained under 2.8 V power supply and 85°C. In addition, a 100 MHz×32 page mode operation, namely 400 M byte/s data rate, in the standard extended data output (EDO) cycle has been successfully demonstrated     

Synthesis of fine composite particles for hydrogen storage, starting from Mg-YNi2 mixture

We synthesized new composite particles for hydrogen storage on the basis of an idea of “particle designing”. As starting materials, powders of Mg and YNi₂ were selected. Fine composite particles containing mainly Mg₂Ni could be designed by repetitive hydriding and dehydriding cycles at 673 K. In the synthesis process of the composite particles, the following two points were found to be essential for this technique. The first point is that, after being activated by the sequential processes of hydrogenation, amorphization and disproportionation, YNi₂ reacts effectively with Mg. The second point is that evaporated Mg, which occurs during dehydriding, adheres to the surface of the activated YNi₂ and accelerates a diffusion reaction to form Mg₂Ni at the interface. In these composite particles, Mg₂NiH₄ is formed, even at 373 K, under a hydrogen pressure of 5 MPa.     

Resonant-tunnelling hot-electron transistor (RHET) using a GaInAs/(AlGa)InAs heterostructure

A common-emitter current gain of 10 has been measured at 77 K for a 100 nm-base resonant-tunnelling hot-electron transistor (RHET) using a GaInAs/(AlGa)InAs heterostructure. The current gain for 25 nm-base RHETs has reached 25, which is the highest value yet reported for hot-electron transistors, and the collector current peak-to-valley ratio has reached 15.0 for the same device.     

The role of aluminum in automotive weight reduction—part III

This series of articles provides, from an international perspective, an analysis of the future of the automotive industry and aluminum’s role in automobile weight reduction. Part I briefly described technological, environmental, and societal issues that are mandating vehicular weight reduction for, among other reasons, purposes of fuel economy. Part II described the status of the weight-reduction technologies that are currently available and projects how they may evolve in the coming years. Part III, the final installment, examines some of the specific strengths and weaknesses of aluminum alloys with regard to their long-term attractiveness to automakers.     

High ratios of free to total insulin-like growth factor-I in early infancy

A case of huge desmoid tumor successfully treated by hyperthermoradiotherapy is described. A 23-year-old man with familial adenomatous polyposis was operated upon for a desmoid tumor in the mesenterium involving the right kidney and small intestine in 1988. In 1990, the tumor recurred and could not be resected because of the involvement of the vena cava. The tumor grew larger and larger, and occupied two-thirds of the right lower quadrant. Several therapies using sulindac, tamoxifen, prednisolone, indomethacin, luteinizing hormone-releasing hormone analogue, and ascorbate were all ineffective. Finally, the combination of radiation and hyperthermia was used over a 6-month period. At the end of the hyperthermoradiotherapy, the tumor in the abdominal wall was markedly reduced in size, and the protruded abdominal wall became flat. To our best knowledge, this is the first report of the successful treatment of a huge desmoid tumor by hyperthermoradiotherapy.     

High-speed and large noise margin tolerance E/D logic gates withLDD structure DMTs fabricated using selective RIE technology

The authors describe a novel design concept for enhancement (E) and depletion (D) mode FET formation using i-AlGaAs/n-GaAs doped-channel hetero-MISFET (DMT) and a novel self-aligned gate process technology for submicrometer-gate DMT-LSIs based on E/D logic gates. 0.5-μm gate E-DMTs (D-DMTs) with a lightly doped drain (LDD) structure show an average V_t of 0.18 (-0.46) V, a V_t standard deviation of 22.6 (24.9) mV, and a maximum transconductance of 450 (300) mS/mm. The V_t shift is less than 50 mV with a decrease in gate length down to 0.5 μm. The gate forward turn-on voltage V_f is more than 0.9 V, i.e. about 1.6 times that for MESFETs. This superiority in V _f, preserved in the high-temperature range, leads to an improvement in noise margin tolerance by a factor of three. In addition, 31-stage ring oscillators operate with a power consumption of 20 (1.0) mW/gate and a propagation delay of 4.8 (14.5) ps/gate. Circuit simulation based on the experimental data predicts 140 ps/gate and 1 mW/gate for DMT direct-coupled FET logic circuits under standard loading conditions. DMTs and the technology developed here are very attractive for realizing low-power and/or high speed LSIs     

Effect of ecabet sodium on Helicobacter pylori adhesion to gastric epithelial cells

STUDY OBJECTIVES: To determine the rates of alcohol-related morbidity and mortality in a cohort of intoxicated ED patients 5 years after presentation and to compare them with those of non-intoxicated ED patients. METHODS: The study group comprised 150 consecutive ED patients who presented with intoxication (blood alcohol level higher than 100 mg/dL) in June 1986 and 50 control patients matched for age, sex, ED arrival time, and date. The setting was an urban university hospital ED. Morbidity and mortality over a 5-year follow-up period were measured using hospital ED and admission records from all state Level I trauma centers and computerized statewide databases. RESULTS: The 5-year mortality rate among alcohol-intoxicated patients was 2.4 times that of the comparison group (95% confidence interval, .3 to 18.9). The 5-year death rate among intoxicated patients aged 40 to 69 years was especially high (19%). Thirty-seven percent of the intoxicated patients made at least one alcohol-related ED revisit during the follow-up period, compared with 6% of the comparison group (P < .001). Intoxicated patients were more likely to revisit EDs because of suicidal behavior or domestic violence (P = .001). Admission to an alcohol detoxification unit during the follow-up period occurred in 24% of the intoxicated patients, compared with 10% of the sober controls (P = .03). At least one arrest for drunk driving occurred in 47% of the intoxicated group; the rate was lower, but still substantial, in the comparison group (20%, P < .001). CONCLUSION: A single alcohol-related ED visit is an important predictor of continued problem drinking, alcohol-impaired driving and, possibly, premature death.